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Laurent Nevou
Laurent Nevou
AMS Ruschlikon
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Systematic experimental and theoretical investigation of intersubband absorption in Ga N∕ Al N quantum wells
M Tchernycheva, L Nevou, L Doyennette, FH Julien, E Warde, F Guillot, ...
Physical Review B 73 (12), 125347, 2006
3102006
GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance
PK Kandaswamy, F Guillot, E Bellet-Amalric, E Monroy, L Nevou, ...
Journal of Applied Physics 104 (9), 2008
2342008
Ultrastrong coupling regime and plasmon polaritons in parabolic semiconductor quantum wells
M Geiser, F Castellano, G Scalari, M Beck, L Nevou, J Faist
Physical Review Letters 108 (10), 106402, 2012
2062012
Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization
M Tchernycheva, C Sartel, G Cirlin, L Travers, G Patriarche, JC Harmand, ...
Nanotechnology 18 (38), 385306, 2007
1672007
GaN/AlGaN intersubband optoelectronic devices
H Machhadani, P Kandaswamy, S Sakr, A Vardi, A Wirtmüller, L Nevou, ...
New Journal of Physics 11 (12), 125023, 2009
1192009
Si-doped GaN∕ AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths
F Guillot, E Bellet-Amalric, E Monroy, M Tchernycheva, L Nevou, ...
Journal of applied physics 100 (4), 2006
1102006
Midinfrared intersubband absorption in lattice-matched AlInN∕ GaN multiple quantum wells
S Nicolay, JF Carlin, E Feltin, R Butté, M Mosca, N Grandjean, M Ilegems, ...
Applied Physics Letters 87 (11), 2005
1072005
Room temperature demonstration of GaN∕ AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength
A Vardi, N Akopian, G Bahir, L Doyennette, M Tchernycheva, L Nevou, ...
Applied physics letters 88 (14), 2006
962006
Short wavelength (λ= 2.13 μm) intersubband luminescence from GaN∕ AlN quantum wells at room temperature
L Nevou, M Tchernycheva, FH Julien, F Guillot, E Monroy
Applied physics letters 90 (12), 2007
782007
Short-wavelength intersubband electroabsorption modulation based on electron tunneling between GaN∕ AlN coupled quantum wells
L Nevou, N Kheirodin, M Tchernycheva, L Meignien, P Crozat, A Lupu, ...
Applied physics letters 90 (22), 2007
732007
Indium surfactant effect on AlN∕ GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions
S Nicolay, E Feltin, JF Carlin, M Mosca, L Nevou, M Tchernycheva, ...
Applied physics letters 88 (15), 2006
732006
High-speed operation of GaN/AlGaN quantum cascade detectors at λ≈ 1.55 μm
A Vardi, N Kheirodin, L Nevou, H Machhadani, L Vivien, P Crozat, ...
Applied Physics Letters 93 (19), 2008
712008
Electron confinement in strongly coupled GaN∕ AlN quantum wells
M Tchernycheva, L Nevou, L Doyennette, FH Julien, F Guillot, E Monroy, ...
Applied physics letters 88 (15), 2006
662006
GaN-based quantum dot infrared photodetector operating at 1.38 µm
L Doyennette, L Nevou, M Tchernycheva, A Lupu, F Guillot, E Monroy, ...
Electronics Letters 41 (19), 1, 2005
612005
Strong light-matter coupling at terahertz frequencies at room temperature in electronic LC resonators
M Geiser, C Walther, G Scalari, M Beck, M Fischer, L Nevou, J Faist
Applied Physics Letters 97 (19), 2010
602010
Strain-induced interface instability in GaN∕ AlN multiple quantum wells
S Nicolay, E Feltin, JF Carlin, N Grandjean, L Nevou, FH Julien, ...
Applied Physics Letters 91 (6), 2007
532007
Intraband absorption of doped GaN∕ AlN quantum dots at telecommunication wavelengths
M Tchernycheva, L Nevou, L Doyennette, A Helman, R Colombelli, ...
Applied Physics Letters 87 (10), 2005
512005
Intersubband resonant enhancement of second-harmonic generation in GaN∕ AlN quantum wells
L Nevou, M Tchernycheva, F Julien, M Raybaut, A Godard, E Rosencher, ...
Applied physics letters 89 (15), 2006
482006
Electrooptical Modulator at Telecommunication Wavelengths Based on GaN–AlN Coupled Quantum Wells
K Kheirodin, L Nevou, H Machhadani, P Crozat, L Vivien, ...
Photonics Technology Letters, IEEE 20 (9), 724-726, 2008
472008
Room-temperature intersubband emission of GaN/AlN quantum wells at λ= 2.3 µm
L Nevou, FH Julien, R Colombelli, F Guillot, E Monroy
Electronics Letters 42 (22), 1308-1309, 2006
412006
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