Systematic experimental and theoretical investigation of intersubband absorption in M Tchernycheva, L Nevou, L Doyennette, FH Julien, E Warde, F Guillot, ...
Physical Review B—Condensed Matter and Materials Physics 73 (12), 125347, 2006
320 2006 GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance PK Kandaswamy, F Guillot, E Bellet-Amalric, E Monroy, L Nevou, ...
Journal of Applied Physics 104 (9), 2008
233 2008 Ultrastrong Coupling Regime and Plasmon Polaritons<? format?> in Parabolic Semiconductor Quantum Wells M Geiser, F Castellano, G Scalari, M Beck, L Nevou, J Faist
Physical Review Letters 108 (10), 106402, 2012
216 2012 Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization M Tchernycheva, C Sartel, G Cirlin, L Travers, G Patriarche, JC Harmand, ...
Nanotechnology 18 (38), 385306, 2007
167 2007 GaN/AlGaN intersubband optoelectronic devices H Machhadani, P Kandaswamy, S Sakr, A Vardi, A Wirtmüller, L Nevou, ...
New Journal of Physics 11 (12), 125023, 2009
119 2009 Midinfrared intersubband absorption in lattice-matched AlInN∕ GaN multiple quantum wells S Nicolay, JF Carlin, E Feltin, R Butté, M Mosca, N Grandjean, M Ilegems, ...
Applied Physics Letters 87 (11), 2005
108 2005 Si-doped GaN∕ AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths F Guillot, E Bellet-Amalric, E Monroy, M Tchernycheva, L Nevou, ...
Journal of applied physics 100 (4), 2006
107 2006 Room temperature demonstration of GaN∕ AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength A Vardi, N Akopian, G Bahir, L Doyennette, M Tchernycheva, L Nevou, ...
Applied physics letters 88 (14), 2006
96 2006 Short wavelength (λ= 2.13 μm) intersubband luminescence from GaN∕ AlN quantum wells at room temperature L Nevou, M Tchernycheva, FH Julien, F Guillot, E Monroy
Applied physics letters 90 (12), 2007
77 2007 Indium surfactant effect on AlN∕ GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions S Nicolay, E Feltin, JF Carlin, M Mosca, L Nevou, M Tchernycheva, ...
Applied physics letters 88 (15), 2006
77 2006 High-speed operation of GaN/AlGaN quantum cascade detectors at λ≈ 1.55 μm A Vardi, N Kheirodin, L Nevou, H Machhadani, L Vivien, P Crozat, ...
Applied Physics Letters 93 (19), 2008
76 2008 Short-wavelength intersubband electroabsorption modulation based on electron tunneling between GaN∕ AlN coupled quantum wells L Nevou, N Kheirodin, M Tchernycheva, L Meignien, P Crozat, A Lupu, ...
Applied physics letters 90 (22), 2007
75 2007 Electron confinement in strongly coupled GaN∕ AlN quantum wells M Tchernycheva, L Nevou, L Doyennette, FH Julien, F Guillot, E Monroy, ...
Applied physics letters 88 (15), 2006
66 2006 Strong light-matter coupling at terahertz frequencies at room temperature in electronic LC resonators M Geiser, C Walther, G Scalari, M Beck, M Fischer, L Nevou, J Faist
Applied Physics Letters 97 (19), 2010
61 2010 GaN-based quantum dot infrared photodetector operating at 1.38 µm L Doyennette, L Nevou, M Tchernycheva, A Lupu, F Guillot, E Monroy, ...
Electronics Letters 41 (19), 1, 2005
59 2005 Strain-induced interface instability in GaN∕ AlN multiple quantum wells S Nicolay, E Feltin, JF Carlin, N Grandjean, L Nevou, FH Julien, ...
Applied Physics Letters 91 (6), 2007
52 2007 Intraband absorption of doped GaN∕ AlN quantum dots at telecommunication wavelengths M Tchernycheva, L Nevou, L Doyennette, A Helman, R Colombelli, ...
Applied Physics Letters 87 (10), 2005
52 2005 Electrooptical Modulator at Telecommunication Wavelengths Based on GaN–AlN Coupled Quantum Wells K Kheirodin, L Nevou, H Machhadani, P Crozat, L Vivien, ...
Photonics Technology Letters, IEEE 20 (9), 724-726, 2008
48 2008 Intersubband resonant enhancement of second-harmonic generation in GaN∕ AlN quantum wells L Nevou, M Tchernycheva, F Julien, M Raybaut, A Godard, E Rosencher, ...
Applied physics letters 89 (15), 2006
48 2006 Room-temperature intersubband emission of GaN/AlN quantum wells at λ= 2.3 µm L Nevou, FH Julien, R Colombelli, F Guillot, E Monroy
Electronics Letters 42 (22), 1308-1309, 2006
40 2006 
Maria TchernychevaResearcher at Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Universite Paris-SudDirección de correo verificada de u-psud.fr
