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Sergey Tumakha
Sergey Tumakha
Senior Technical Program Manager
Verified email at tumakha.com
Title
Cited by
Cited by
Year
Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation
RS Okojie, M Xhang, P Pirouz, S Tumakha, G Jessen, LJ Brillson
Applied Physics Letters 79 (19), 3056-3058, 2001
1922001
Inhomogeneities in Ni∕ 4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states
DJ Ewing, LM Porter, Q Wahab, X Ma, TS Sudharshan, S Tumakha, ...
Journal of applied physics 101 (11), 2007
1042007
Inhomogeneities in Ni∕ 4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states
DJ Ewing, LM Porter, Q Wahab, X Ma, TS Sudharshan, S Tumakha, ...
Journal of applied physics 101 (11), 2007
1042007
NiSi polysilicon fuse reliability in 65-nm logic CMOS technology
B Ang, S Tumakha, J Im, SS Paak
IEEE Transactions on Device and Materials Reliability 7 (2), 298-303, 2007
832007
Characterization of silicided polysilicon fuse implemented in 65nm Logic CMOS technology
J Im, B Ang, S Tumakha, S Paak
2006 7th Annual Non-Volatile Memory Technology Symposium, 55-57, 2006
812006
Defect-driven inhomogeneities in Ni∕ 4H–SiC Schottky barriers
S Tumakha, DJ Ewing, LM Porter, Q Wahab, X Ma, TS Sudharshan, ...
Applied Physics Letters 87 (24), 2005
622005
Thermal and doping dependence of 4H-SiC polytype transformation
LJ Brillson, S Tumakha, GH Jessen, RS Okojie, M Zhang, P Pirouz
Applied physics letters 81 (15), 2785-2787, 2002
502002
Role of Interface Layers and Localized States in TiAl-Based Ohmic Contacts to p-Type 4H-SiC
M Gao, S Tsukimoto, SH Goss, SP Tumakha, T Onishi, M Murakami, ...
Journal of electronic materials 36, 277-284, 2007
442007
4H-to 3C-SiC polytypic transformation during oxidation
RS Okojie, M Xhang, P Pirouz, S Tumakha, G Jessen, LJ Brillson
Materials Science Forum 389, 451-454, 2002
352002
Electron-excited luminescence of SiC surfaces and interfaces
LJ Brillson, S Tumakha, RS Okojie, M Zhang, P Pirouz
Journal of Physics: Condensed Matter 16 (17), S1733, 2004
202004
Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2–HfO2–SiO2–Si stacks
YM Strzhemechny, M Bataiev, SP Tumakha, SH Goss, CL Hinkle, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
152008
Chemically dependent traps and polytypes at Pt/Ti contacts to 4H and 6H–SiC
S Tumakha, LJ Brillson, GH Jessen, RS Okojie, D Lukco, M Zhang, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002
142002
G. Jes sen, and LJ Brillson
RS Okojie, M Xhang, P Pirouz, S Tumakha
Mater. Sci. Forum 389, 393-451, 2002
132002
Electronic defect states at annealed metal∕ 4H–SiC interfaces
S Tumakha, SH Goss, LJ Brillson, RS Okojie
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005
102005
Surface morphology and chemistry of 4H-and 6H-SiC after cyclic oxidation
RS Okojie, D Lukco, L Keys, S Tumakha, LJ Brillson
Materials Science Forum 389 (2), 1101-1104, 2002
52002
SiC studied via LEEN and cathodoluminescence spectroscopy
LJ Brillson, SP Tumakha, RS Okojie, M Zhang, P Pirouz
Materials Science Forum 457, 543-548, 2004
42004
Characterization of Ti/Al Ohmic Contacts to p-Type 4H-SiC Using Cathodoluminescence and Auger Electron Spectroscopies
M Gao, SP Tumakha, T Onishi, S Tsukimoto, M Murakami, LJ Brillson
Materials science forum 527, 891-894, 2006
32006
Local electronic and chemical structure at GaN, AlGaN and SiC heterointerfaces
LJ Brillson, ST Bradley, SH Tumakha, SH Goss, XL Sun, RS Okojie, ...
Applied surface science 244 (1-4), 257-263, 2005
32005
A study of inhomogeneous Schottky diodes on n-type 4H-SiC
DJ Ewing, Q Wahab, SP Tumakha, LJ Brillson, XY Ma, TS Sudarshan, ...
Materials science forum 527, 911-914, 2006
22006
The Impact of Surface Defects on SiC Schottky and Ohmic Contact Formation
LJ Brillson, SP Tumakha, M Gao, DJ Ewing, LM Porter, RS Okojie, ...
2005 International Semiconductor Device Research Symposium, 141-142, 2005
12005
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