Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation RS Okojie, M Xhang, P Pirouz, S Tumakha, G Jessen, LJ Brillson Applied Physics Letters 79 (19), 3056-3058, 2001 | 192 | 2001 |
Inhomogeneities in Ni∕ 4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states DJ Ewing, LM Porter, Q Wahab, X Ma, TS Sudharshan, S Tumakha, ... Journal of applied physics 101 (11), 2007 | 104 | 2007 |
Inhomogeneities in Ni∕ 4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states DJ Ewing, LM Porter, Q Wahab, X Ma, TS Sudharshan, S Tumakha, ... Journal of applied physics 101 (11), 2007 | 104 | 2007 |
NiSi polysilicon fuse reliability in 65-nm logic CMOS technology B Ang, S Tumakha, J Im, SS Paak IEEE Transactions on Device and Materials Reliability 7 (2), 298-303, 2007 | 83 | 2007 |
Characterization of silicided polysilicon fuse implemented in 65nm Logic CMOS technology J Im, B Ang, S Tumakha, S Paak 2006 7th Annual Non-Volatile Memory Technology Symposium, 55-57, 2006 | 81 | 2006 |
Defect-driven inhomogeneities in Ni∕ 4H–SiC Schottky barriers S Tumakha, DJ Ewing, LM Porter, Q Wahab, X Ma, TS Sudharshan, ... Applied Physics Letters 87 (24), 2005 | 62 | 2005 |
Thermal and doping dependence of 4H-SiC polytype transformation LJ Brillson, S Tumakha, GH Jessen, RS Okojie, M Zhang, P Pirouz Applied physics letters 81 (15), 2785-2787, 2002 | 50 | 2002 |
Role of Interface Layers and Localized States in TiAl-Based Ohmic Contacts to p-Type 4H-SiC M Gao, S Tsukimoto, SH Goss, SP Tumakha, T Onishi, M Murakami, ... Journal of electronic materials 36, 277-284, 2007 | 44 | 2007 |
4H-to 3C-SiC polytypic transformation during oxidation RS Okojie, M Xhang, P Pirouz, S Tumakha, G Jessen, LJ Brillson Materials Science Forum 389, 451-454, 2002 | 35 | 2002 |
Electron-excited luminescence of SiC surfaces and interfaces LJ Brillson, S Tumakha, RS Okojie, M Zhang, P Pirouz Journal of Physics: Condensed Matter 16 (17), S1733, 2004 | 20 | 2004 |
Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2–HfO2–SiO2–Si stacks YM Strzhemechny, M Bataiev, SP Tumakha, SH Goss, CL Hinkle, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | 15 | 2008 |
Chemically dependent traps and polytypes at Pt/Ti contacts to 4H and 6H–SiC S Tumakha, LJ Brillson, GH Jessen, RS Okojie, D Lukco, M Zhang, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002 | 14 | 2002 |
G. Jes sen, and LJ Brillson RS Okojie, M Xhang, P Pirouz, S Tumakha Mater. Sci. Forum 389, 393-451, 2002 | 13 | 2002 |
Electronic defect states at annealed metal∕ 4H–SiC interfaces S Tumakha, SH Goss, LJ Brillson, RS Okojie Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005 | 10 | 2005 |
Surface morphology and chemistry of 4H-and 6H-SiC after cyclic oxidation RS Okojie, D Lukco, L Keys, S Tumakha, LJ Brillson Materials Science Forum 389 (2), 1101-1104, 2002 | 5 | 2002 |
SiC studied via LEEN and cathodoluminescence spectroscopy LJ Brillson, SP Tumakha, RS Okojie, M Zhang, P Pirouz Materials Science Forum 457, 543-548, 2004 | 4 | 2004 |
Characterization of Ti/Al Ohmic Contacts to p-Type 4H-SiC Using Cathodoluminescence and Auger Electron Spectroscopies M Gao, SP Tumakha, T Onishi, S Tsukimoto, M Murakami, LJ Brillson Materials science forum 527, 891-894, 2006 | 3 | 2006 |
Local electronic and chemical structure at GaN, AlGaN and SiC heterointerfaces LJ Brillson, ST Bradley, SH Tumakha, SH Goss, XL Sun, RS Okojie, ... Applied surface science 244 (1-4), 257-263, 2005 | 3 | 2005 |
A study of inhomogeneous Schottky diodes on n-type 4H-SiC DJ Ewing, Q Wahab, SP Tumakha, LJ Brillson, XY Ma, TS Sudarshan, ... Materials science forum 527, 911-914, 2006 | 2 | 2006 |
The Impact of Surface Defects on SiC Schottky and Ohmic Contact Formation LJ Brillson, SP Tumakha, M Gao, DJ Ewing, LM Porter, RS Okojie, ... 2005 International Semiconductor Device Research Symposium, 141-142, 2005 | 1 | 2005 |