Erya DENG
Erya DENG
TIMA
Dirección de correo verificada de imag.fr
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Año
Perpendicular-anisotropy magnetic tunnel junction switched by spin-Hall-assisted spin-transfer torque
Z Wang, W Zhao, E Deng, JO Klein, C Chappert
Journal of Physics D: Applied Physics 48 (6), 065001, 2015
1202015
Low power magnetic full-adder based on spin transfer torque MRAM
E Deng, Y Zhang, JO Klein, D Ravelsona, C Chappert, W Zhao
IEEE transactions on magnetics 49 (9), 4982-4987, 2013
992013
Ultra low power magnetic flip-flop based on checkpointing/power gating and self-enable mechanisms
D Chabi, W Zhao, E Deng, Y Zhang, NB Romdhane, JO Klein, C Chappert
IEEE Transactions on Circuits and Systems I: Regular Papers 61 (6), 1755-1765, 2014
982014
Synchronous non-volatile logic gate design based on resistive switching memories
W Zhao, M Moreau, E Deng, Y Zhang, JM Portal, JO Klein, M Bocquet, ...
IEEE Transactions on Circuits and Systems I: Regular Papers 61 (2), 443-454, 2013
812013
Compact model of dielectric breakdown in spin-transfer torque magnetic tunnel junction
Y Wang, H Cai, LA de Barros Naviner, Y Zhang, X Zhao, E Deng, JO Klein, ...
IEEE Transactions on Electron Devices 63 (4), 1762-1767, 2016
642016
A radiation hardened hybrid spintronic/CMOS nonvolatile unit using magnetic tunnel junctions
W Zhao, E Deng, JO Klein, Y Cheng, D Ravelosona, Y Zhang, C Chappert
Journal of Physics D: Applied Physics 47 (40), 405003, 2014
502014
Compact model of magnetic tunnel junction with stochastic spin transfer torque switching for reliability analyses
Y Wang, Y Zhang, EY Deng, JO Klein, LAB Naviner, WS Zhao
Microelectronics Reliability 54 (9-10), 1774-1778, 2014
502014
Separated precharge sensing amplifier for deep submicrometer MTJ/CMOS hybrid logic circuits
W Kang, E Deng, JO Klein, Y Zhang, Y Zhang, C Chappert, D Ravelosona, ...
IEEE Transactions on Magnetics 50 (6), 1-5, 2014
502014
Synchronous 8-bit non-volatile full-adder based on spin transfer torque magnetic tunnel junction
E Deng, Y Zhang, W Kang, B Dieny, JO Klein, G Prenat, W Zhao
IEEE Transactions on Circuits and Systems I: Regular Papers 62 (7), 1757-1765, 2015
342015
Magnetic non‐volatile flip‐flop with spin‐Hall assistance
Z Wang, W Zhao, E Deng, Y Zhang, JO Klein
physica status solidi (RRL)–Rapid Research Letters 9 (6), 375-378, 2015
292015
Design optimization and analysis of multicontext STT-MTJ/CMOS logic circuits
E Deng, W Kang, Y Zhang, JO Klein, C Chappert, W Zhao
IEEE Transactions on Nanotechnology 14 (1), 169-177, 2014
252014
High-frequency low-power magnetic full-adder based on magnetic tunnel junction with spin-hall assistance
E Deng, Z Wang, JO Klein, G Prenat, B Dieny, W Zhao
IEEE Transactions on Magnetics 51 (11), 1-4, 2015
202015
Robust magnetic full-adder with voltage sensing 2T/2MTJ cell
ERA DENg, YOU WANg, Z WANg, JO Klein, B DiENy, G Prenat, W Zhao
Proceedings of the 2015 IEEE/ACM International Symposium on Nanoscale …, 2015
162015
Variation-tolerant high-reliability sensing scheme for deep submicrometer STT-MRAM
W Kang, Z Li, Z Wang, E Deng, JO Klein, Y Zhang, C Chappert, ...
IEEE Transactions on Magnetics 50 (11), 1-4, 2014
132014
A novel MTJ-based non-volatile ternary content-addressable memory for high-speed, low-power, and high-reliable search operation
C Wang, D Zhang, L Zeng, E Deng, J Chen, W Zhao
IEEE Transactions on Circuits and Systems I: Regular Papers 66 (4), 1454-1464, 2018
112018
Demonstration of multi-state memory device combining resistive and magnetic switching behaviors
Y Zhang, W Cai, W Kang, J Yang, E Deng, YG Zhang, W Zhao, ...
IEEE Electron Device Letters 39 (5), 684-687, 2018
72018
A high-reliability and low-power computing-in-memory implementation within STT-MRAM
L Zhang, E Deng, H Cai, Y Wang, L Torres, A Todri-Sanial, Y Zhang
Microelectronics Journal 81, 69-75, 2018
62018
Spintronic processing unit within voltage-gated spin hall effect MRAMs
H Zhang, W Kang, B Wu, P Ouyang, E Deng, Y Zhang, W Zhao
IEEE Transactions on Nanotechnology 18, 473-483, 2019
52019
Design and development of low-power and reliable logic circuits based on spin-transfer torque magnetic tunnel junctions
E Deng
52017
Non-volatile magnetic decoder based on MTJs
EY Deng, G Prenat, L Anghel, WS Zhao
Electronics Letters 52 (21), 1774-1776, 2016
52016
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