| Growth and properties of GaSbBi alloys MK Rajpalke, WM Linhart, M Birkett, KM Yu, DO Scanlon, J Buckeridge, ... Applied Physics Letters 103 (14), 2013 | 100 | 2013 |
| InAs-Al hybrid devices passing the topological gap protocol M Aghaee, A Akkala, Z Alam, R Ali, AA Ramirez, M Andrzejczuk, ... Physical Review B 107 (24), 245423, 2023 | 94 | 2023 |
| Binary group III-nitride based heterostructures: band offsets and transport properties B Roul, M Kumar, MK Rajpalke, TN Bhat, SB Krupanidhi Journal of Physics D: Applied Physics 48 (42), 423001, 2015 | 78 | 2015 |
| High Bi content GaSbBi alloys MK Rajpalke, WM Linhart, M Birkett, KM Yu, J Alaria, J Kopaczek, ... Journal of applied physics 116 (4), 2014 | 77 | 2014 |
| Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1−x Sb x nanowires EA Anyebe, MK Rajpalke, TD Veal, CJ Jin, ZM Wang, QD Zhuang Nano Research 8, 1309-1319, 2015 | 73 | 2015 |
| Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy QD Zhuang, EA Anyebe, R Chen, H Liu, AM Sanchez, MK Rajpalke, ... Nano Letters 15 (2), 1109-1116, 2015 | 63 | 2015 |
| Bi-induced band gap reduction in epitaxial InSbBi alloys MK Rajpalke, WM Linhart, KM Yu, M Birkett, J Alaria, JJ Bomphrey, ... Applied Physics Letters 105 (21), 2014 | 62 | 2014 |
| Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films B Roul, MK Rajpalke, TN Bhat, M Kumar, AT Kalghatgi, SB Krupanidhi, ... Applied Physics Letters 99 (16), 2011 | 54 | 2011 |
| Theoretical and experimental studies of electronic band structure for GaSb1− xBix in the dilute Bi regime MP Polak, P Scharoch, R Kudrawiec, J Kopaczek, MJ Winiarski, ... Journal of Physics D: Applied Physics 47 (35), 355107, 2014 | 53 | 2014 |
| Temperature dependence of the band gap of GaSb1− xBix alloys with 0< x≤ 0.042 determined by photoreflectance J Kopaczek, R Kudrawiec, WM Linhart, MK Rajpalke, KM Yu, TS Jones, ... Applied Physics Letters 103 (26), 2013 | 47 | 2013 |
| Realization of vertically aligned, ultrahigh aspect ratio InAsSb nanowires on graphite EA Anyebe, AM Sánchez, S Hindmarsh, X Chen, J Shao, MK Rajpalke, ... Nano Letters 15 (7), 4348-4355, 2015 | 42 | 2015 |
| Low-and high-energy photoluminescence from GaSb1− xBix with 0< x≤ 0.042 J Kopaczek, R Kudrawiec, W Linhart, M Rajpalke, T Jones, M Ashwin, ... Applied Physics Express 7 (11), 111202, 2014 | 35 | 2014 |
| Bi flux-dependent MBE growth of GaSbBi alloys MK Rajpalke, WM Linhart, KM Yu, TS Jones, MJ Ashwin, TD Veal Journal of Crystal Growth 425, 241-244, 2015 | 33 | 2015 |
| Transport and infrared photoresponse properties of InN nanorods/Si heterojunction M Kumar, TN Bhat, MK Rajpalke, B Roul, AT Kalghatgi, SB Krupanidhi Nanoscale research letters 6, 1-6, 2011 | 30 | 2011 |
| Improved growth of GaN layers on ultra thin silicon nitride/Si (1 1 1) by RF-MBE M Kumar, B Roul, TN Bhat, MK Rajpalke, P Misra, LM Kukreja, N Sinha, ... Materials Research Bulletin 45 (11), 1581-1585, 2010 | 29 | 2010 |
| Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy TN Bhat, MK Rajpalke, B Roul, M Kumar, SB Krupanidhi Journal of Applied Physics 110 (9), 2011 | 28 | 2011 |
| Vertical GaN nanocolumns grown on graphene intermediated with a thin AlN buffer layer AL Mulyo, MK Rajpalke, H Kuroe, PE Vullum, H Weman, BO Fimland, ... Nanotechnology 30 (1), 015604, 2018 | 27 | 2018 |
| Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes B Roul, MK Rajpalke, TN Bhat, M Kumar, N Sinha, AT Kalghatgi, ... Journal of Applied Physics 109 (4), 044502-044502-5, 2011 | 27 | 2011 |
| Growth of InN layers on Si (111) using ultra thin silicon nitride buffer layer by NPA-MBE M Kumar, MK Rajpalke, TN Bhat, B Roul, N Sinha, AT Kalghatgi, ... Materials letters 65 (9), 1396-1399, 2011 | 26 | 2011 |
| Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors EA Anyebe, I Sandall, ZM Jin, AM Sanchez, MK Rajpalke, TD Veal, ... Scientific reports 7 (1), 46110, 2017 | 23 | 2017 |
