Fernando Calle
Fernando Calle
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Wide-bandgap semiconductor ultraviolet photodetectors
E Monroy, F Omnès, F Calle
Semiconductor science and technology 18 (4), R33, 2003
Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy
E Calleja, MA Sánchez-García, FJ Sánchez, F Calle, FB Naranjo, ...
Physical Review B 62 (24), 16826, 2000
The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN-and AlN-layers grown by molecular beam epitaxy on Si (1 1 1)
MA Sanchez-Garcia, E Calleja, E Monroy, FJ Sanchez, F Calle, E Munoz, ...
Journal of crystal growth 183 (1-2), 23-30, 1998
III nitrides and UV detection
E Munoz, E Monroy, JL Pau, F Calle, F Omnes, P Gibart
Journal of Physics: Condensed Matter 13 (32), 7115, 2001
Yellow luminescence and related deep states in undoped GaN
E Calleja, FJ Sánchez, D Basak, MA Sanchez-Garcia, E Munoz, I Izpura, ...
Physical Review B 55 (7), 4689, 1997
High-performance GaN pn junction photodetectors for solar ultraviolet applications
E Monroy, E Munoz, FJ Sánchez, F Calle, E Calleja, B Beaumont, P Gibart, ...
Semiconductor science and technology 13 (9), 1042, 1998
AlGaN-based UV photodetectors
E Monroy, F Calle, JL Pau, E Munoz, F Omnes, B Beaumont, P Gibart
Journal of crystal growth 230 (3-4), 537-543, 2001
Growth of III-nitrides on Si (1 1 1) by molecular beam epitaxy Doping, optical, and electrical properties
E Calleja, MA Sánchez-Garcı́a, FJ Sánchez, F Calle, FB Naranjo, ...
Journal of crystal growth 201, 296-317, 1999
Synthesis of c-axis oriented AlN thin films on different substrates: A review
GF Iriarte, JG Rodríguez, F Calle
Materials Research Bulletin 45 (9), 1039-1045, 2010
AlGaN metal–semiconductor–metal photodiodes
E Monroy, F Calle, E Munoz, F Omnes
Applied Physics Letters 74 (22), 3401-3403, 1999
Neutrino physics with the PTOLEMY project: active neutrino properties and the light sterile case
MG Betti, M Biasotti, A Boscá, F Calle, N Canci, G Cavoto, C Chang, ...
Journal of Cosmology and Astroparticle Physics 2019 (07), 047, 2019
Analysis and modeling of -based Schottky barrier photodiodes
E Monroy, F Calle, JL Pau, FJ Sanchez, E Munoz, F Omnes, B Beaumont, ...
Journal of Applied Physics 88 (4), 2081-2091, 2000
A review on 2D transition metal di-chalcogenides and metal oxide nanostructures based NO2 gas sensors
S Kumar, V Pavelyev, P Mishra, N Tripathi, P Sharma, F Calle
Materials Science in Semiconductor Processing 107, 104865, 2020
Schottky barrier photodiodes with fast response and high detectivity
E Monroy, F Calle, E Munoz, F Omnes, P Gibart, JA Munoz
Applied physics letters 73 (15), 2146-2148, 1998
High precision pressure sensors based on SAW devices in the GHz range
JG Rodríguez-Madrid, GF Iriarte, OA Williams, F Calle
Sensors and Actuators A: Physical 189, 364-369, 2013
Recent trends in graphene supercapacitors: from large area to microsupercapacitors
A Velasco, YK Ryu, A Boscá, A Ladrón-de-Guevara, E Hunt, J Zuo, ...
Sustainable Energy & Fuels 5 (5), 1235-1254, 2021
Coupling light into graphene plasmons through surface acoustic waves
J Schiefele, J Pedrós, F Sols, F Calle, F Guinea
Physical review letters 111 (23), 237405, 2013
Super-high-frequency SAW resonators on AlN/diamond
JG Rodriguez-Madrid, GF Iriarte, J Pedros, OA Williams, D Brink, F Calle
IEEE Electron device letters 33 (4), 495-497, 2012
Effect of Ga/Si interdiffusion on optical and transport properties of GaN layers grown on Si (111) by molecular-beam epitaxy
E Calleja, MA Sanchez-Garcia, D Basak, FJ Sánchez, F Calle, P Youinou, ...
Physical Review B 58 (3), 1550, 1998
Wet etching of GaN grown by molecular beam epitaxy on Si (111)
T Palacios, F Calle, M Varela, C Ballesteros, E Monroy, FB Naranjo, ...
Semiconductor science and technology 15 (10), 996, 2000
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