| The role of chemical potential in compensation control in Si: AlGaN S Washiyama, P Reddy, B Sarkar, MH Breckenridge, Q Guo, P Bagheri, ... Journal of Applied Physics 127 (10), 2020 | 54 | 2020 |
| High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing MH Breckenridge, J Tweedie, P Reddy, Y Guan, P Bagheri, D Szymanski, ... Applied Physics Letters 118 (2), 2021 | 43 | 2021 |
| High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN MH Breckenridge, P Bagheri, Q Guo, B Sarkar, D Khachariya, S Pavlidis, ... Applied Physics Letters 118 (11), 2021 | 28 | 2021 |
| Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping S Washiyama, KJ Mirrielees, P Bagheri, JN Baker, JH Kim, Q Guo, ... Applied Physics Letters 118 (4), 2021 | 22 | 2021 |
| The nature of the DX state in Ge-doped AlGaN P Bagheri, R Kirste, P Reddy, S Washiyama, S Mita, B Sarkar, R Collazo, ... Applied Physics Letters 116 (22), 2020 | 18 | 2020 |
| Doping and compensation in heavily Mg doped Al-rich AlGaN films P Bagheri, A Klump, S Washiyama, M Hayden Breckenridge, JH Kim, ... Applied Physics Letters 120 (8), 2022 | 17 | 2022 |
| Record> 10 MV/cm mesa breakdown fields in Al0. 85Ga0. 15N/Al0. 6Ga0. 4N high electron mobility transistors on native AlN substrates D Khachariya, S Mita, P Reddy, S Dangi, JH Dycus, P Bagheri, ... Applied Physics Letters 120 (17), 2022 | 12 | 2022 |
| Study on avalanche breakdown and Poole–Frenkel emission in Al-rich AlGaN grown on single crystal AlN P Reddy, D Khachariya, W Mecouch, MH Breckenridge, P Bagheri, ... Applied Physics Letters 119 (18), 2021 | 12 | 2021 |
| Impact of impurity-based phonon resonant scattering on thermal conductivity of single crystalline GaN P Bagheri, P Reddy, JH Kim, R Rounds, T Sochacki, R Kirste, ... Applied Physics Letters 117 (8), 2020 | 12 | 2020 |
| Tracking of point defects in the full compositional range of AlGaN via photoluminescence spectroscopy J Hyun Kim, P Bagheri, R Kirste, P Reddy, R Collazo, Z Sitar physica status solidi (a) 220 (8), 2200390, 2023 | 11 | 2023 |
| High electron mobility in AlN: Si by point and extended defect management P Bagheri, C Quiñones-Garcia, D Khachariya, S Rathkanthiwar, P Reddy, ... Journal of Applied Physics 132 (18), 2022 | 9 | 2022 |
| Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices S Rathkanthiwar, P Bagheri, D Khachariya, S Mita, S Pavlidis, P Reddy, ... Applied Physics Express 15 (5), 051003, 2022 | 9 | 2022 |
| GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions D Szymanski, D Khachariya, TB Eldred, P Bagheri, S Washiyama, ... Journal of Applied Physics 131 (1), 2022 | 8 | 2022 |
| Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates P Reddy, W Mecouch, M Hayden Breckenridge, D Khachariya, P Bagheri, ... physica status solidi (RRL)–Rapid Research Letters 16 (6), 2100619, 2022 | 7 | 2022 |
| On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters A Jadhav, P Bagheri, A Klump, D Khachariya, S Mita, P Reddy, ... Semiconductor Science and Technology 37 (1), 015003, 2021 | 7 | 2021 |
| On the Ge shallow-to-deep level transition in Al-rich AlGaN P Bagheri, P Reddy, S Mita, D Szymanski, JH Kim, Y Guan, D Khachariya, ... Journal of Applied Physics 130 (5), 2021 | 7 | 2021 |
| High p-conductivity in AlGaN enabled by polarization field engineering S Rathkanthiwar, P Reddy, B Moody, C Quiñones-García, P Bagheri, ... Applied Physics Letters 122 (15), 2023 | 6 | 2023 |
| Weak localization and dimensional crossover in compositionally graded AlxGa1− xN A Al-Tawhid, AA Shafe, P Bagheri, Y Guan, P Reddy, S Mita, B Moody, ... Applied Physics Letters 118 (8), 2021 | 6 | 2021 |
| High conductivity in Ge-doped AlN achieved by a non-equilibrium process P Bagheri, C Quiñones-Garcia, D Khachariya, J Loveless, Y Guan, ... Applied Physics Letters 122 (14), 2023 | 5 | 2023 |
| Al0.85Ga0.15N/Al0.6Ga0.4N High Electron Mobility Transistors on Native AlN Substrates with >9 MV/cm Mesa Breakdown Fields D Khachariya, S Mita, P Reddy, S Dangi, P Bagheri, MH Breckenridge, ... 2021 Device Research Conference (DRC), 1-2, 2021 | 5 | 2021 |
Ramon CollazoProfessor of Materials Science and Engineering, NCSUDirección de correo verificada de ncsu.edu
