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Arnaud Garnache
Arnaud Garnache
IES-CNRS University of Montpellier, France
Dirección de correo verificada de ies.univ-montp2.fr - Página principal
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Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100-mW average power
A Garnache, S Hoogland, AC Tropper, I Sagnes, G Saint-Girons, ...
APPLIED PHYSICS LETTERS 80 (21), 3892-3894, 2002
2782002
Vertical-external-cavity semiconductor lasers
AC Tropper, HD Foreman, A Garnache, KG Wilcox, SH Hoogland
Journal of Physics D: Applied Physics 37 (9), R75, 2004
2552004
Soliton-like pulse-shaping mechanism in passively mode-locked surface-emitting semiconductor lasers
R Paschotta, R Häring, A Garnache, S Hoogland, AC Tropper, U Keller
Applied Physics B 75, 445-451, 2002
1792002
Diode-pumped broadband vertical-external-cavity surface-emitting semiconductor laser applied to high-sensitivity intracavity absorption spectroscopy
A Garnache, AA Kachanov, F Stoeckel, R Houdre
JOSA B 17 (9), 1589-1598, 2000
1372000
Experimental demonstration of a tunable dual-frequency semiconductor laser free of relaxation oscillations
G Baili, L Morvan, M Alouini, D Dolfi, F Bretenaker, I Sagnes, A Garnache
Optics letters 34 (21), 3421-3423, 2009
1242009
Multiwatt—power highly—coherent compact single—frequency tunable vertical—external—cavity—surface—emitting—semiconductor—laser
A Laurain, M Myara, G Beaudoin, I Sagnes, A Garnache
Optics Express 18 (14), 14627-14636, 2010
1202010
Single-frequency tunable Sb-based VCSELs emitting at 2.3 μm
A Ouvrard, A Garnache, L Cerutti, F Genty, D Romanini
IEEE Photonics Technology Letters 17 (10), 2020-2022, 2005
1082005
Single-Frequency operation of External-Cavity VCSELs: Non-linear multimode temporal dynamics and quantumlimit
A Garnache, A Ouvrard, D Romanini
Optics Express 15 (15), 9403-9417, 2007
862007
10-GHz train of sub-500-fs optical soliton-like pulses from a surface-emitting semiconductor laser
S Hoogland, A Garnache, I Sagnes, JS Roberts, AC Tropper
IEEE Photonics Technology Letters 17 (2), 267-269, 2005
802005
Shot-noise-limited operation of a monomode high-cavity-finesse semiconductor laser for microwave photonics applications
G Baili, M Alouini, D Dolfi, F Bretenaker, I Sagnes, A Garnache
Optics letters 32 (6), 650-652, 2007
742007
High-sensitivity intracavity laser absorption spectroscopy with vertical-external-cavity surface-emitting semiconductor lasers
A Garnache, AA Kachanov, F Stoeckel, R Planel
Optics Letters 24 (12), 826-828, 1999
691999
High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 μm
L Cerutti, A Garnache, A Ouvrard, F Genty
Journal of Crystal Growth 268 (1-2), 128-134, 2004
682004
Control of light polarization using optically spin-injected vertical external cavity surface emitting lasers
J Frougier, G Baili, M Alouini, I Sagnes, H Jaffrès, A Garnache, C Deranlot, ...
Applied Physics Letters 103 (25), 2013
652013
Single-frequency cw vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling
M Jacquemet, M Domenech, G Lucas-Leclin, P Georges, J Dion, ...
Applied Physics B 86, 503-510, 2007
642007
Vortex Laser based on III-V semiconductor metasurface: direct generation of coherent Laguerre-Gauss modes carrying controlled orbital angular momentum
MS Seghilani, M Myara, M Sellahi, L Legratiet, I Sagnes, G Beaudoin, ...
Scientific reports 6 (1), 1-12, 2016
632016
Optical transmitter comprising a stepwise tunable laser
A Garnache, D Romanini, F Stoeckel, A Katchanov, G Knippels, B Paldus, ...
US Patent 6,611,546, 2003
622003
High power single–frequency continuously–tunable compact extended–cavity semiconductor laser
A Laurain, M Myara, G Beaudoin, I Sagnes, A Garnache
Optics Express 17 (12), 9503-9508, 2009
592009
Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1 µm
L Cerutti, A Garnache, F Genty, A Ouvrard, C Alibert
Electronics Letters 39 (3), 290-292, 2003
592003
2-2.7 μm single frequency tunable Sb-based lasers operating in CW at RT: microcavity and external cavity VCSELs, DFB
A Garnache, A Ouvrard, L Cerutti, D Barat, A Vicet, F Genty, Y Rouillard, ...
Semiconductor Lasers and Laser Dynamics II 6184, 195-209, 2006
552006
Surface-emitting semiconductor laser
A Garnache, A Katchanov, F Stoeckel
US Patent 6,658,034, 2003
512003
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
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