Arnaud Garnache
Arnaud Garnache
IES-CNRS University of Montpellier, France
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Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100-mW average power
A Garnache, S Hoogland, AC Tropper, I Sagnes, G Saint-Girons, ...
APPLIED PHYSICS LETTERS 80 (21), 3892-3894, 2002
2562002
Vertical-external-cavity semiconductor lasers
AC Tropper, HD Foreman, A Garnache, KG Wilcox, SH Hoogland
Journal of Physics D: Applied Physics 37 (9), R75, 2004
2282004
Soliton-like pulse-shaping mechanism in passively mode-locked surface-emitting semiconductor lasers
R Paschotta, R Häring, A Garnache, S Hoogland, AC Tropper, U Keller
Applied Physics B 75 (4-5), 445-451, 2002
1392002
Diode-pumped broadband vertical-external-cavity surface-emitting semiconductor laser applied to high-sensitivity intracavity absorption spectroscopy
A Garnache, AA Kachanov, F Stoeckel, R Houdre
JOSA B 17 (9), 1589-1598, 2000
1262000
Single-frequency tunable Sb-based VCSELs emitting at 2.3 μm
A Ouvrard, A Garnache, L Cerutti, F Genty, D Romanini
IEEE Photonics Technology Letters 17 (10), 2020-2022, 2005
1002005
Experimental demonstration of a tunable dual-frequency semiconductor laser free of relaxation oscillations
G Baili, L Morvan, M Alouini, D Dolfi, F Bretenaker, I Sagnes, A Garnache
Optics letters 34 (21), 3421-3423, 2009
992009
Multiwatt—power highly—coherent compact single—frequency tunable vertical—external—cavity—surface—emitting—semiconductor—laser
A Laurain, M Myara, G Beaudoin, I Sagnes, A Garnache
Optics Express 18 (14), 14627-14636, 2010
982010
10-GHz train of sub-500-fs optical soliton-like pulses from a surface-emitting semiconductor laser
S Hoogland, A Garnache, I Sagnes, JS Roberts, AC Tropper
IEEE Photonics Technology Letters 17 (2), 267-269, 2005
772005
Single-Frequency operation of External-Cavity VCSELs: Non-linear multimode temporal dynamics and quantumlimit
A Garnache, A Ouvrard, D Romanini
Optics Express 15 (15), 9403-9417, 2007
742007
Shot-noise-limited operation of a monomode high-cavity-finesse semiconductor laser for microwave photonics applications
G Baili, M Alouini, D Dolfi, F Bretenaker, I Sagnes, A Garnache
Optics letters 32 (6), 650-652, 2007
632007
High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 μm
L Cerutti, A Garnache, A Ouvrard, F Genty
Journal of crystal growth 268 (1-2), 128-134, 2004
632004
High-sensitivity intracavity laser absorption spectroscopy with vertical-external-cavity surface-emitting semiconductor lasers
A Garnache, AA Kachanov, F Stoeckel, R Planel
Optics letters 24 (12), 826-828, 1999
621999
Single-frequency cw vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling
M Jacquemet, M Domenech, G Lucas-Leclin, P Georges, J Dion, ...
Applied Physics B 86 (3), 503-510, 2007
602007
Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1 µm
L Cerutti, A Garnache, F Genty, A Ouvrard, C Alibert
Electronics Letters 39 (3), 290-292, 2003
602003
Optical transmitter comprising a stepwise tunable laser
A Garnache, D Romanini, F Stoeckel, A Katchanov, G Knippels, B Paldus, ...
US Patent 6,611,546, 2003
532003
2-2.7 μm single frequency tunable sb-based lasers operating in cw at rt: microcavity and external cavity vcsels, dfb
A Garnache, A Ouvrard, L Cerutti, D Barat, A Vicet, F Genty, Y Rouillard, ...
Semiconductor Lasers and Laser Dynamics II 6184, 61840N, 2006
522006
High resolution absorption spectroscopy of the acetylenic overtone bands of propyne: Spectroscopy and dynamics
A Campargue, L Biennier, A Garnache, A Kachanov, D Romanini, ...
The Journal of chemical physics 111 (17), 7888-7903, 1999
501999
Surface-emitting semiconductor laser
A Garnache, A Katchanov, F Stoeckel
US Patent 6,658,034, 2003
462003
Picosecond pulse generation with 1.5/spl mu/m passively modelocked surface-emitting semiconductor laser
S Hoogland, A Garnache, I Sagnes, B Paldus, KJ Weingarten, R Grange, ...
Electronics Letters 39 (11), 846-847, 2003
462003
High power single–frequency continuously–tunable compact extended–cavity semiconductor laser
A Laurain, M Myara, G Beaudoin, I Sagnes, A Garnache
Optics Express 17 (12), 9503-9508, 2009
452009
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
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