| Silicon-on-Nothing (SON)-an innovative process for advanced CMOS M Jurczak, T Skotnicki, M Paoli, B Tormen, J Martins, JL Regolini, ... IEEE Transactions on Electron Devices 47 (11), 2179-2187, 2000 | 313 | 2000 |
| Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy JD Cressler, S Monfray, G Freeman, D Friedman, DJ Paul, S Tsujino, ... CRC press, 2018 | 297 | 2018 |
| Method of gas-phase deposition by epitaxy D Dutartre, V Paredes-Saez US Patent App. 15/594,763, 2018 | 205 | 2018 |
| Vibratory beam electromechanical resonator T Skotnicki, D Dutartre, P Ribot US Patent 6,873,088, 2005 | 184 | 2005 |
| 0.13 m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications G Avenier, M Diop, P Chevalier, G Troillard, N Loubet, J Bouvier, ... IEEE journal of solid-state circuits 44 (9), 2312-2321, 2009 | 176 | 2009 |
| Excitonic photoluminescence from Si-capped strained layers D Dutartre, G Brémond, A Souifi, T Benyattou Physical Review B 44 (20), 11525, 1991 | 131 | 1991 |
| Dielectric pockets-a new concept of the junctions for deca-nanometric CMOS devices M Jurczak, T Skotnicki, R Gwoziecki, M Paoli, B Tormen, P Ribot, ... IEEE Transactions on Electron Devices 48 (8), 1770-1775, 2001 | 114 | 2001 |
| 50 nm-gate all around (GAA)-silicon on nothing (SON)-devices: A simple way to co-integration of GAA transistors within bulk MOSFET process S Monfray, T Skotnicki, Y Morand, S Descombes, P Coronel, P Mazoyer, ... 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2002 | 109 | 2002 |
| 230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications P Chevalier, C Fellous, L Rubaldo, F Pourchon, S Pruvost, R Beerkens, ... IEEE journal of solid-state circuits 40 (10), 2025-2034, 2005 | 81 | 2005 |
| A 150GHz f/sub T//f/sub max/0.13/spl mu/m SiGe: C BiCMOS technology Laurens, Martinet, Kermarrec, Campidelli, Deleglise, Dutarte, Troillard, ... 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE …, 2003 | 79 | 2003 |
| First 80 nm SON (silicon-on-nothing) MOSFETs with perfect morphology and high electrical performance S Monfray, T Skotnicki, Y Morand, S Descombes, M Paoli, P Ribot, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 79 | 2001 |
| 16 nm planar NMOSFET manufacturable within state-of-the-art CMOS process thanks to specific design and optimisation F Boeuf, T Skotnicki, S Monfray, C Julien, D Dutartre, J Martins, P Mazoyer, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 69 | 2001 |
| Highly performant double gate MOSFET realized with SON process S Harrison, P Coronel, F Leverd, R Cerutti, R Palla, D Delille, S Borel, ... IEEE International Electron Devices Meeting 2003, 18.6. 1-18.6. 4, 2003 | 66 | 2003 |
| Process for fabricating a substrate of the silicon-on-insulator or silicon-on-nothing type and resulting device T Skotnicki, M Haond, D Dutartre US Patent 6,537,894, 2003 | 66 | 2003 |
| A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters S Jouan, R Planche, H Baudry, P Ribot, JA Chroboczek, D Dutartre, ... IEEE Transactions on Electron Devices 46 (7), 1525-1531, 1999 | 58 | 1999 |
| 0.13 μm SiGe BiCMOS technology for mm-wave applications G Avenier, P Chevalier, G Troillard, B Vandelle, F Brossard, L Depoyan, ... 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 89-92, 2008 | 57 | 2008 |
| Emerging silicon-on-nothing (SON) devices technology S Monfray, T Skotnicki, C Fenouillet-Beranger, N Carriere, ... Solid-state electronics 48 (6), 887-895, 2004 | 57 | 2004 |
| High performance 0.25/spl mu/m SiGe and SiGe: C HBTs using non selective epitaxy H Baudry, B Martinet, C Fellous, O Kermarrec, Y Campidelli, M Laurens, ... Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat …, 2001 | 55 | 2001 |
| SiGe HBTs featuring fT≫400GHz at room temperature B Geynet, P Chevalier, B Vandelle, F Brossard, N Zerounian, M Buczko, ... 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 121-124, 2008 | 53 | 2008 |
| 300 GHz f/sub max/self-aligned SiGeC HBT optimized towards CMOS compatiblity P Chevalier, B Barbalat, L Rubaldo, B Vandelle, D Dutartre, P Bouillon, ... Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005 …, 2005 | 52 | 2005 |
