| Controlled shallow single-ion implantation in silicon using an active substrate for sub-20‐keV ions DN Jamieson, C Yang, T Hopf, SM Hearne, CI Pakes, S Prawer, M Mitic, ... Applied Physics Letters 86 (20), 2005 | 282 | 2005 |
| Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates H Mertens, R Ritzenthaler, A Chasin, T Schram, E Kunnen, A Hikavyy, ... 2016 IEEE International Electron Devices Meeting (IEDM), 19.7. 1-19.7. 4, 2016 | 157 | 2016 |
| Charge state control and relaxation in an atomically doped silicon device SES Andresen, R Brenner, CJ Wellard, C Yang, T Hopf, CC Escott, ... Nano letters 7 (7), 2000-2003, 2007 | 83 | 2007 |
| Size-controlled synthesis and gas sensing application of tungsten oxide nanostructures produced by arc discharge F Fang, J Kennedy, J Futter, T Hopf, A Markwitz, E Manikandan, ... Nanotechnology 22 (33), 335702, 2011 | 82 | 2011 |
| First monolithic integration of 3d complementary fet (cfet) on 300mm wafers S Subramanian, M Hosseini, T Chiarella, S Sarkar, P Schuddinck, ... 2020 Ieee Symposium on Vlsi Technology, 1-2, 2020 | 63 | 2020 |
| Forksheet FETs for advanced CMOS scaling: forksheet-nanosheet co-integration and dual work function metal gates at 17nm NP space H Mertens, R Ritzenthaler, Y Oniki, B Briggs, BT Chan, A Hikavyy, T Hopf, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 48 | 2021 |
| Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon E Escobedo-Cousin, K Vassilevski, T Hopf, N Wright, A O'Neill, A Horsfall, ... Journal of Applied Physics 113 (11), 2013 | 36 | 2013 |
| Buried power rail integration with FinFETs for ultimate CMOS scaling A Gupta, OV Pedreira, G Arutchelvan, H Zahedmanesh, K Devriendt, ... IEEE Transactions on Electron Devices 67 (12), 5349-5354, 2020 | 32 | 2020 |
| Shock protection of penetrator-based instrumentation via a sublimation approach T Hopf, S Kumar, WJ Karl, WT Pike Advances in Space Research 45 (3), 460-467, 2010 | 31 | 2010 |
| Design, fabrication and testing of a micromachined seismometer with NANO-G resolution WT Pike, IM Standley, WJ Karl, S Kumar, T Stemple, SJ Vijendran, T Hopf TRANSDUCERS 2009-2009 International Solid-State Sensors, Actuators and …, 2009 | 25 | 2009 |
| Scaled, novel effective workfunction metal gate stacks for advanced low-V T, gate-all-around vertically stacked nanosheet FETs with reduced vertical distance between sheets A Veloso, E Simoen, A Oliveira, A Chasin, SC Chen, Y Lin, T Miyashita, ... International Conference on Solid State Devices and Materials, 2019 | 24 | 2019 |
| Single-ion implantation for the development of Si-based MOSFET devices with quantum functionalities JC McCallum, DN Jamieson, C Yang, AD Alves, BC Johnson, T Hopf, ... Advances in Materials Science and Engineering 2012, 2012 | 22 | 2012 |
| Enabling logic with backside connectivity via n-TSVs and its potential as a scaling booster A Veloso, A Jourdain, G Hiblot, F Schleicher, K D’have, F Sebaai, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 17 | 2021 |
| Buried power rail integration with Si FinFETs for CMOS scaling beyond the 5 nm node A Gupta, H Mertens, Z Tao, S Demuynck, J Bömmels, G Arutchelvan, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 16 | 2020 |
| Determination of the adhesion energy of graphene on SiC (0001) via measurement of pleat defects GH Wells, T Hopf, KV Vassilevski, E Escobedo-Cousin, NG Wright, ... Applied Physics Letters 105 (19), 2014 | 16 | 2014 |
| Implanted counted dopant ions S Andresen, AS Dzurak, E Gauja, S Hearne, TF Hopf, DN Jamieson, ... US Patent 7,834,422, 2010 | 16 | 2010 |
| An update on MoonLITE R Gowen, A Smith, B Winter, C Theobald, K Rees, AJ Ball, A Hagermann, ... Proceedings of 59th International Astronautical Congress 7, 4359-4369, 2008 | 15 | 2008 |
| Single atom Si nanoelectronics using controlled single-ion implantation M Mitic, SE Andresen, C Yang, T Hopf, V Chan, E Gauja, FE Hudson, ... Microelectronic engineering 78, 279-286, 2005 | 15 | 2005 |
| Scaled FinFETs connected by using both wafer sides for routing via buried power rails A Veloso, A Jourdain, D Radisic, R Chen, G Arutchelvan, B O’Sullivan, ... IEEE Transactions on Electron Devices 69 (12), 7173-7179, 2022 | 11 | 2022 |
| Quantum effects in ion implanted devices DN Jamieson, V Chan, FE Hudson, SE Andresen, C Yang, T Hopf, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2006 | 11 | 2006 |
