Carsten Pfüller
Carsten Pfüller
Post Doc, Paul-Drude-Institut
Verified email at pdi-berlin.de
Title
Cited by
Cited by
Year
Suitability of Au-and self-assisted GaAs nanowires for optoelectronic applications
S Breuer, C Pfuller, T Flissikowski, O Brandt, HT Grahn, L Geelhaar, ...
Nano letters 11 (3), 1276-1279, 2011
2172011
Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons
O Brandt, C Pfüller, C Chèze, L Geelhaar, H Riechert
Physical Review B 81 (4), 045302, 2010
1362010
Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments
U Jahn, J Lähnemann, C Pfüller, O Brandt, S Breuer, B Jenichen, ...
Physical Review B 85 (4), 045323, 2012
1332012
Properties of GaN nanowires grown by molecular beam epitaxy
L Geelhaar, C Cheze, B Jenichen, O Brandt, C Pfueller, S Muench, ...
IEEE Journal of Selected Topics in Quantum Electronics 17 (4), 878-888, 2011
1322011
Direct experimental determination of the spontaneous polarization of GaN
J Lähnemann, O Brandt, U Jahn, C Pfüller, C Roder, P Dogan, F Grosse, ...
Physical Review B 86 (8), 081302, 2012
1102012
Unpinning the Fermi level of GaN nanowires by ultraviolet radiation
C Pfüller, O Brandt, F Grosse, T Flissikowski, C Chèze, V Consonni, ...
Physical Review B 82 (4), 045320, 2010
782010
Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil
G Calabrese, P Corfdir, G Gao, C Pfüller, A Trampert, O Brandt, ...
Applied Physics Letters 108 (20), 202101, 2016
752016
Macro-and micro-strain in GaN nanowires on Si (111)
B Jenichen, O Brandt, C Pfueller, P Dogan, M Knelangen, A Trampert
Nanotechnology 22 (29), 295714, 2011
752011
Coexistence of quantum-confined Stark effect and localized states in an (In, Ga) N/GaN nanowire heterostructure
J Lähnemann, O Brandt, C Pfüller, T Flissikowski, U Jahn, E Luna, ...
Physical Review B 84 (15), 155303, 2011
562011
Molecular beam epitaxy of GaN nanowires on epitaxial graphene
S Fernández-Garrido, M Ramsteiner, G Gao, LA Galves, B Sharma, ...
Nano letters 17 (9), 5213-5221, 2017
512017
Acoustically driven photon antibunching in nanowires
A Hernández-Mínguez, M Möller, S Breuer, C Pfüller, C Somaschini, ...
Nano letters 12 (1), 252-258, 2012
512012
Formation of high-quality GaN microcrystals by pendeoepitaxial overgrowth of GaN nanowires on Si (111) by molecular beam epitaxy
P Dogan, O Brandt, C Pfüller, J Lähnemann, U Jahn, C Roder, ...
Crystal growth & design 11 (10), 4257-4260, 2011
332011
Correlation between In content and emission wavelength of InxGa1− xN/GaN nanowire heterostructures
M Wölz, J Lähnemann, O Brandt, VM Kaganer, M Ramsteiner, C Pfüller, ...
Nanotechnology 23 (45), 455203, 2012
302012
GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si (1 1 1) by molecular beam epitaxy
P Dogan, O Brandt, C Pfüller, AK Bluhm, L Geelhaar, H Riechert
Journal of crystal growth 323 (1), 418-421, 2011
302011
Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the poissonian limit
C Pfüller, O Brandt, T Flissikowski, C Chèze, L Geelhaar, HT Grahn, ...
Nano Research 3 (12), 881-888, 2010
292010
Dislocation contrast in cathodoluminescence and electron-beam induced current maps on GaN (0 0 0 1)
KK Sabelfeld, VM Kaganer, C Pfüller, O Brandt
Journal of Physics D: Applied Physics 50 (40), 405101, 2017
202017
Effect of surface roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils
G Calabrese, SV Pettersen, C Pfüller, M Ramsteiner, JK Grepstad, ...
Nanotechnology 28 (42), 425602, 2017
172017
Synthesis of novel carbon nanostructures by annealing of silicon-carbon nanoparticles at atmospheric pressure
M Miettinen, J Hokkinen, T Karhunen, T Torvela, C Pfüller, M Ramsteiner, ...
Journal of nanoparticle research 16 (1), 1-13, 2014
172014
Determination of the Carrier Diffusion Length in from Cathodoluminescence Maps Around Threading Dislocations: Fallacies and Opportunities
VM Kaganer, J Lähnemann, C Pfüller, KK Sabelfeld, AE Kireeva, O Brandt
Physical Review Applied 12 (5), 054038, 2019
162019
The effect of the SiC (0001) surface morphology on the growth of epitaxial mono-layer graphene nanoribbons
LA Galves, JM Wofford, GV Soares, U Jahn, C Pfüller, H Riechert, ...
Carbon 115, 162-168, 2017
162017
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