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Steven DenBaars
Steven DenBaars
Dirección de correo verificada de engineering.ucsb.edu
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Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
D Leonard, M Krishnamurthy, CM Reaves, SP DenBaars, PM Petroff
Applied Physics Letters 63 (23), 3203-3205, 1993
23661993
Prospects for LED lighting
S Pimputkar, JS Speck, SP DenBaars, S Nakamura
Nature photonics 3 (4), 180-182, 2009
23532009
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
T Fujii, Y Gao, R Sharma, EL Hu, SP DenBaars, S Nakamura
Applied physics letters 84 (6), 855-857, 2004
17682004
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
JP Ibbetson, PT Fini, KD Ness, SP DenBaars, JS Speck, UK Mishra
Applied Physics Letters 77 (2), 250-252, 2000
14152000
Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films
B Heying, XH Wu, S Keller, Y Li, D Kapolnek, BP Keller, SP DenBaars, ...
Applied physics letters 68 (5), 643-645, 1996
10941996
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
JF Muth, JH Lee, IK Shmagin, RM Kolbas, HC Casey, BP Keller, ...
Applied Physics Letters 71 (18), 2572-2574, 1997
9481997
“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
YH Cho, GH Gainer, AJ Fischer, JJ Song, S Keller, UK Mishra, ...
Applied Physics Letters 73 (10), 1370-1372, 1998
8681998
Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors
SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ...
Nature materials 5 (10), 810-816, 2006
8412006
Structural characterization of nonpolar a-plane GaN thin films grown on r-plane sapphire
MD Craven, SH Lim, F Wu, JS Speck, SP DenBaars
Applied Physics Letters 81 (3), 469-471, 2002
6692002
Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
IP Smorchkova, CR Elsass, JP Ibbetson, R Vetury, B Heying, P Fini, ...
Journal of applied physics 86 (8), 4520-4526, 1999
6081999
AlGaN/AlN/GaN high-power microwave HEMT
L Shen, S Heikman, B Moran, R Coffie, NQ Zhang, D Buttari, ...
IEEE Electron Device Letters 22 (10), 457-459, 2001
6002001
Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells
XH Wu, CR Elsass, A Abare, M Mack, S Keller, PM Petroff, SP DenBaars, ...
Applied Physics Letters 72 (6), 692-694, 1998
6001998
Method for fabrication of semipolar (Al, In, Ga, B) N based light emitting diodes
H Sato, H Hirasawa, RB Chung, SP DenBaars, JS Speck, S Nakamura
US Patent 8,148,713, 2012
5902012
High-power AlGaN/GaN HEMTs for ka-band applications
T Palacios, A Chakraborty, S Rajan, C Poblenz, S Keller, SP DenBaars, ...
IEEE Electron device letters 26 (11), 781-783, 2005
5872005
Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures
SF Chichibu, AC Abare, MS Minsky, S Keller, SB Fleischer, JE Bowers, ...
Applied Physics Letters 73 (14), 2006-2008, 1998
5801998
Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3
XH Wu, LM Brown, D Kapolnek, S Keller, B Keller, SP DenBaars, ...
Journal of applied physics 80 (6), 3228-3237, 1996
5651996
High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates
Y Dora, A Chakraborty, L Mccarthy, S Keller, SP DenBaars, UK Mishra
IEEE Electron Device Letters 27 (9), 713-715, 2006
5512006
High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
CJ Neufeld, NG Toledo, SC Cruz, M Iza, SP DenBaars, UK Mishra
Applied Physics Letters 93 (14), 2008
5312008
Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy
EJ Tarsa, B Heying, XH Wu, P Fini, SP DenBaars, JS Speck
Journal of applied physics 82 (11), 5472-5479, 1997
5271997
Enhanced light extraction in LEDs through the use of internal and external optical elements
B Thibeault, M Mack, S DenBaars
US Patent 6,657,236, 2003
5232003
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Artículos 1–20