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zarko gacevic
zarko gacevic
Profesor Contratado Doctor, Universidad Politécnica de Madrid
Verified email at isom.upm.es
Title
Cited by
Cited by
Year
Formation mechanisms of GaN nanowires grown by selective area growth homoepitaxy
Z Gačević, D Gomez Sanchez, E Calleja
Nano letters 15 (2), 1117-1121, 2015
1152015
Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy
Ž Gačević, A Das, J Teubert, Y Kotsar, PK Kandaswamy, T Kehagias, ...
Journal of Applied Physics 109 (10), 2011
952011
A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy
S Fernández-Garrido, Ž Gačević, E Calleja
Applied Physics Letters 93 (19), 2008
622008
Intraband absorption in InAs/GaAs quantum dot infrared photodetectors—effective mass versus k× p modelling
N Vukmirović, Ž Gačević, Z Ikonić, D Indjin, P Harrison, V Milanović
Semiconductor science and technology 21 (8), 1098, 2006
552006
Emission of linearly polarized single photons from quantum dots contained in nonpolar, semipolar, and polar sections of pencil-like InGaN/GaN nanowires
Z Gačević, M Holmes, E Chernysheva, M Müller, A Torres-Pardo, ...
ACS Photonics 4 (3), 657-664, 2017
532017
A comprehensive diagram to grow (0001) InGaN alloys by molecular beam epitaxy
Ž Gačević, VJ Gómez, NG Lepetit, PEDS Rodríguez, A Bengoechea, ...
Journal of crystal growth 364, 123-127, 2013
532013
High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy
Ž Gačević, S Fernández-Garrido, JM Rebled, S Estradé, F Peiró, E Calleja
Applied Physics Letters 99 (3), 2011
352011
A top-gate GaN nanowire metal–semiconductor field effect transistor with improved channel electrostatic control
Ž Gačević, D López-Romero, T Juan Mangas, E Calleja
Applied Physics Letters 108 (3), 2016
342016
Blue-to-green single photons from InGaN/GaN dot-in-a-nanowire ordered arrays
E Chernysheva, Ž Gačević, N García-Lepetit, HP Van der Meulen, ...
Europhysics Letters 111 (2), 24001, 2015
312015
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
AD Utrilla, DF Reyes, JM Llorens, I Artacho, T Ben, D González, Ž Gačević, ...
Solar Energy Materials and Solar Cells 159, 282-289, 2017
302017
Optoelectronic properties of InAlN/GaN distributed Bragg reflector heterostructure examined by valence electron energy loss spectroscopy
A Eljarrat, S Estradé, Ž Gačević, S Fernández-Garrido, E Calleja, ...
Microscopy and Microanalysis 18 (5), 1143-1154, 2012
292012
Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires
Ž Gačević, N Vukmirović, N García-Lepetit, A Torres-Pardo, M Müller, ...
Physical Review B 93 (12), 125436, 2016
282016
Crystallographically uniform arrays of ordered (In) GaN nanocolumns
Ž Gačević, A Bengoechea-Encabo, S Albert, A Torres-Pardo, ...
Journal of Applied Physics 117 (3), 2015
262015
InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy
Ž Gačević, S Fernández-Garrido, D Hosseini, S Estradé, F Peiró, ...
Journal of Applied Physics 108 (11), 2010
262010
Improving optical performance of GaN nanowires grown by selective area growth homoepitaxy: Influence of substrate and nanowire dimensions
P Aseev, Ž Gačević, A Torres-Pardo, JM González-Calbet, E Calleja
Applied Physics Letters 108 (25), 2016
212016
Impact of alloyed capping layers on the performance of InAs quantum dot solar cells
AD Utrilla, JM Ulloa, Ž Gačević, DF Reyes, I Artacho, T Ben, D González, ...
Solar Energy Materials and Solar Cells 144, 128-135, 2016
182016
Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves
S Lazić, E Chernysheva, Ž Gačević, HP Van Der Meulen, E Calleja, ...
AIP Advances 5 (9), 2015
182015
Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters
S Lazić, E Chernysheva, Ž Gačević, N García-Lepetit, HP van der Meulen, ...
Gallium Nitride Materials and Devices X 9363, 96-103, 2015
152015
Q-factor of (In, Ga) N containing III-nitride microcavity grown by multiple deposition techniques
Ž Gačević, G Rossbach, R Butté, F Réveret, M Glauser, J Levrat, ...
Journal of Applied Physics 114 (23), 2013
142013
Growth and characterization of lattice‐matched InAlN/GaN Bragg reflectors grown by plasma‐assisted molecular beam epitaxy
Ž Gačević, S Fernández‐Garrido, E Calleja, E Luna, A Trampert
physica status solidi c 6 (S2 2), S643-S645, 2009
142009
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