Hannah Joyce
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Phase perfection in zinc blende and wurtzite III− V nanowires using basic growth parameters
HJ Joyce, J Wong-Leung, Q Gao, HH Tan, C Jagadish
Nano letters 10 (3), 908-915, 2010
5262010
Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process
HJ Joyce, Q Gao, HH Tan, C Jagadish, Y Kim, X Zhang, Y Guo, J Zou
Nano letters 7 (4), 921-926, 2007
3572007
III–V semiconductor nanowires for optoelectronic device applications
HJ Joyce, Q Gao, HH Tan, C Jagadish, Y Kim, J Zou, LM Smith, ...
Progress in Quantum Electronics 35 (2-3), 23-75, 2011
3082011
Carrier lifetime and mobility enhancement in nearly defect-free core− shell nanowires measured using time-resolved terahertz spectroscopy
P Parkinson, HJ Joyce, Q Gao, HH Tan, X Zhang, J Zou, C Jagadish, ...
Nano letters 9 (9), 3349-3353, 2009
3022009
Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy
HJ Joyce, CJ Docherty, Q Gao, HH Tan, C Jagadish, J Lloyd-Hughes, ...
Nanotechnology 24 (21), 214006, 2013
2622013
Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires
Y Kim, HJ Joyce, Q Gao, HH Tan, C Jagadish, M Paladugu, J Zou, ...
Nano letters 6 (4), 599-604, 2006
2552006
Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires
A Mishra, LV Titova, TB Hoang, HE Jackson, LM Smith, JM Yarrison-Rice, ...
Applied Physics Letters 91 (26), 263104, 2007
2352007
Temperature dependence of photoluminescence from single core-shell GaAs–AlGaAs nanowires
LV Titova, TB Hoang, HE Jackson, LM Smith, JM Yarrison-Rice, Y Kim, ...
Applied Physics Letters 89 (17), 173126, 2006
2232006
Ultrafast Transient Terahertz Conductivity of Monolayer MoS2 and WSe2 Grown by Chemical Vapor Deposition
CJ Docherty, P Parkinson, HJ Joyce, MH Chiu, CH Chen, MY Lee, LJ Li, ...
ACS nano 8 (11), 11147-11153, 2014
1702014
Unexpected benefits of rapid growth rate for III− V nanowires
HJ Joyce, Q Gao, HH Tan, C Jagadish, Y Kim, MA Fickenscher, S Perera, ...
Nano letters 9 (2), 695-701, 2009
1692009
Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy
HJ Joyce, J Wong-Leung, CK Yong, CJ Docherty, S Paiman, Q Gao, ...
Nano letters 12 (10), 5325-5330, 2012
1602012
Growth mechanism of truncated triangular III–V nanowires
J Zou, M Paladugu, H Wang, GJ Auchterlonie, YN Guo, Y Kim, Q Gao, ...
Small 3 (3), 389-393, 2007
1492007
Extreme sensitivity of graphene photoconductivity to environmental gases
CJ Docherty, CT Lin, HJ Joyce, RJ Nicholas, LM Herz, LJ Li, MB Johnston
Nature communications 3 (1), 1-6, 2012
1342012
Nearly intrinsic exciton lifetimes in single twin-free core-shell nanowire heterostructures
S Perera, MA Fickenscher, HE Jackson, LM Smith, JM Yarrison-Rice, ...
Applied Physics Letters 93 (5), 053110, 2008
1332008
A review of the electrical properties of semiconductor nanowires: insights gained from terahertz conductivity spectroscopy
HJ Joyce, JL Boland, CL Davies, SA Baig, MB Johnston
Semiconductor Science and Technology 31 (10), 103003, 2016
1302016
High purity GaAs nanowires free of planar defects: growth and characterization
HJ Joyce, Q Gao, HH Tan, C Jagadish, Y Kim, MA Fickenscher, S Perera, ...
Advanced Functional Materials 18 (23), 3794-3800, 2008
1182008
Super deformability and Young’s modulus of GaAs nanowires
YB Wang, LF Wang, HJ Joyce, Q Gao, XZ Liao, YW Mai, HH Tan, J Zou, ...
Advanced Materials 23 (11), 1356-1360, 2011
1172011
Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
M Paladugu, J Zou, YN Guo, X Zhang, Y Kim, HJ Joyce, Q Gao, HH Tan, ...
Applied Physics Letters 93 (10), 101911, 2008
1152008
Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures
M Paladugu, J Zou, YN Guo, GJ Auchterlonie, HJ Joyce, Q Gao, ...
Small 3 (11), 1873-1877, 2007
1112007
Removal of surface states and recovery of band-edge emission in InAs nanowires through surface passivation
MH Sun, HJ Joyce, Q Gao, HH Tan, C Jagadish, CZ Ning
Nano letters 12 (7), 3378-3384, 2012
1062012
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
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