Optical absorption properties of BaSi2 epitaxial films grown on a transparent silicon-on-insulator substrate using molecular beam epitaxy K Toh, T Saito, T Suemasu
Japanese Journal of Applied Physics 50 (6R), 068001, 2011
276 2011 Room temperature 1.6 µm electroluminescence from a Si-based light emitting diode with β-FeSi2 active region TST Suemasu, YNY Negishi, KTK Takakura, FHF Hasegawa
Japanese Journal of Applied Physics 39 (10B), L1013, 2000
261 2000 Optical and electrical properties of semiconducting BaSi2 thin films on Si substrates grown by molecular beam epitaxy K Morita, Y Inomata, T Suemasu
Thin Solid Films 508 (1-2), 363-366, 2006
252 2006 Investigation of grain boundaries in BaSi2 epitaxial films on Si (1 1 1) substrates using transmission electron microscopy and electron-beam-induced current technique M Baba, K Toh, K Toko, N Saito, N Yoshizawa, K Jiptner, T Sekiguchi, ...
Journal of crystal growth 348 (1), 75-79, 2012
182 2012 Epitaxial growth of semiconducting BaSi2 films on Si (111) substrates by molecular beam epitaxy Y Inomata, T Nakamura, T Suemasu, F Hasegawa
Japanese Journal of Applied Physics 43 (4A), L478, 2004
174 2004 Exploring the potential of semiconducting BaSi2 for thin-film solar cell applications T Suemasu, N Usami
Journal of Physics D: Applied Physics 50 (2), 023001, 2016
173 2016 Investigation of the energy band structure of orthorhombic by optical and electrical measurements and theoretical calculations T Nakamura, T Suemasu, K Takakura, F Hasegawa, A Wakahara, M Imai
Applied physics letters 81 (6), 1032-1034, 2002
152 2002 Effect of amorphous Si capping layer on the hole transport properties of BaSi2 and improved conversion efficiency approaching 10% in p-BaSi2/n-Si solar cells S Yachi, R Takabe, H Takeuchi, K Toko, T Suemasu
Applied Physics Letters 109 (7), 2016
143 2016 Exploring the possibility of semiconducting BaSi2 for thin-film solar cell applications T Suemasu
Japanese Journal of Applied Physics 54 (7S2), 07JA01, 2015
129 2015 Determination of bulk minority-carrier lifetime in BaSi2 earth-abundant absorber films by utilizing a drastic enhancement of carrier lifetime by post-growth annealing KO Hara, N Usami, K Nakamura, R Takabe, M Baba, K Toko, T Suemasu
Applied Physics Express 6 (11), 112302, 2013
127 2013 Epitaxial growth of semiconducting BaSi2 thin films on Si (111) substrates by reactive deposition epitaxy Y Inomata, T Nakamura, T Suemasu, F Hasegawa
Japanese journal of applied physics 43 (7R), 4155, 2004
125 2004 Formation of β-FeSi 2 layers on Si (001) substrates MTM Tanaka, YKY Kumagai, TST Suemasu, FHF Hasegawa
Japanese journal of applied physics 36 (6R), 3620, 1997
114 1997 Low-temperature (180° C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization K Toko, R Numata, N Oya, N Fukata, N Usami, T Suemasu
Applied physics letters 104 (2), 2014
112 2014 Control of electron and hole concentrations in semiconducting silicide BaSi2 with impurities grown by molecular beam epitaxy M Kobayashi, Y Matsumoto, Y Ichikawa, D Tsukada, T Suemasu
Applied physics express 1 (5), 051403, 2008
110 2008 Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization K Toko, M Kurosawa, N Saitoh, N Yoshizawa, N Usami, M Miyao, ...
Applied physics letters 101 (7), 2012
109 2012 Influence of grain size and surface condition on minority-carrier lifetime in undoped n-BaSi2 on Si (111) R Takabe, KO Hara, M Baba, W Du, N Shimada, K Toko, N Usami, ...
Journal of applied physics 115 (19), 2014
108 2014 Influence of Si growth temperature for embedding β- and resultant strain in β- on light emission from light-emitting diodes T Suemasu, Y Negishi, K Takakura, F Hasegawa, T Chikyow
Applied Physics Letters 79 (12), 1804-1806, 2001
108 2001 High-electrical-conductivity multilayer graphene formed by layer exchange with controlled thickness and interlayer H Murata, Y Nakajima, N Saitoh, N Yoshizawa, T Suemasu, K Toko
Scientific reports 9 (1), 4068, 2019
106 2019 Investigation of the recombination mechanism of excess carriers in undoped BaSi2 films on silicon KO Hara, N Usami, K Toh, M Baba, K Toko, T Suemasu
Journal of applied physics 112 (8), 2012
104 2012 High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization K Toko, R Yoshimine, K Moto, T Suemasu
Scientific reports 7 (1), 16981, 2017
99 2017