| High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates P Reddy, M Hayden Breckenridge, Q Guo, A Klump, D Khachariya, ... Applied Physics Letters 116 (8), 2020 | 41 | 2020 |
| High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN MH Breckenridge, P Bagheri, Q Guo, B Sarkar, D Khachariya, S Pavlidis, ... Applied Physics Letters 118 (11), 2021 | 28 | 2021 |
| Doping and compensation in heavily Mg doped Al-rich AlGaN films P Bagheri, A Klump, S Washiyama, M Hayden Breckenridge, JH Kim, ... Applied Physics Letters 120 (8), 2022 | 17 | 2022 |
| Chemical treatment effects on Schottky contacts to metalorganic chemical vapor deposited n-type N-polar GaN D Khachariya, D Szymanski, R Sengupta, P Reddy, E Kohn, Z Sitar, ... Journal of Applied Physics 128 (6), 2020 | 16 | 2020 |
| Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing D Khachariya, S Stein, W Mecouch, MH Breckenridge, S Rathkanthiwar, ... Applied Physics Express 15 (10), 101004, 2022 | 13 | 2022 |
| Role of polarity in SiN on Al/GaN and the pathway to stable contacts P Reddy, D Khachariya, D Szymanski, MH Breckenridge, B Sarkar, ... Semiconductor Science and Technology 35 (5), 055007, 2020 | 13 | 2020 |
| Superluminescent light emitting diodes on naturally survived InGaN/GaN lateral nanowires D Banerjee, S Sankaranarayanan, D Khachariya, MB Nadar, S Ganguly, ... Applied Physics Letters 109 (3), 2016 | 13 | 2016 |
| Record> 10 MV/cm mesa breakdown fields in Al0. 85Ga0. 15N/Al0. 6Ga0. 4N high electron mobility transistors on native AlN substrates D Khachariya, S Mita, P Reddy, S Dangi, JH Dycus, P Bagheri, ... Applied Physics Letters 120 (17), 2022 | 12 | 2022 |
| Study on avalanche breakdown and Poole–Frenkel emission in Al-rich AlGaN grown on single crystal AlN P Reddy, D Khachariya, W Mecouch, MH Breckenridge, P Bagheri, ... Applied Physics Letters 119 (18), 2021 | 12 | 2021 |
| Electrically injected ultra-low threshold room temperature InGaN/GaN-based lateral triangular nanowire laser D Banerjee, K Takhar, S Sankaranarayanan, P Upadhyay, R Ruia, ... Applied Physics Letters 107 (10), 2015 | 12 | 2015 |
| Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts K Takhar, SA Kumar, M Meer, BB Upadhyay, P Upadhyay, D Khachariya, ... Solid-State Electronics 122, 70-74, 2016 | 10 | 2016 |
| High electron mobility in AlN: Si by point and extended defect management P Bagheri, C Quiñones-Garcia, D Khachariya, S Rathkanthiwar, P Reddy, ... Journal of Applied Physics 132 (18), 2022 | 9 | 2022 |
| Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices S Rathkanthiwar, P Bagheri, D Khachariya, S Mita, S Pavlidis, P Reddy, ... Applied Physics Express 15 (5), 051003, 2022 | 9 | 2022 |
| On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers D Khachariya, D Szymanski, MH Breckenridge, P Reddy, E Kohn, Z Sitar, ... Applied Physics Letters 118 (12), 2021 | 9 | 2021 |
| Improved Ohmic contact to GaN and AlGaN/GaN two‐dimensional electron gas using trap assisted tunneling by B implantation P Upadhyay, M Meer, K Takhar, D Khachariya, A Kumar S, D Banerjee, ... physica status solidi (b) 252 (5), 989-995, 2015 | 9 | 2015 |
| GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions D Szymanski, D Khachariya, TB Eldred, P Bagheri, S Washiyama, ... Journal of Applied Physics 131 (1), 2022 | 8 | 2022 |
| Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates P Reddy, W Mecouch, M Hayden Breckenridge, D Khachariya, P Bagheri, ... physica status solidi (RRL)–Rapid Research Letters 16 (6), 2100619, 2022 | 7 | 2022 |
| On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters A Jadhav, P Bagheri, A Klump, D Khachariya, S Mita, P Reddy, ... Semiconductor Science and Technology 37 (1), 015003, 2021 | 7 | 2021 |
| On the Ge shallow-to-deep level transition in Al-rich AlGaN P Bagheri, P Reddy, S Mita, D Szymanski, JH Kim, Y Guan, D Khachariya, ... Journal of Applied Physics 130 (5), 2021 | 7 | 2021 |
| A path toward vertical GaN superjunction devices D Khachariya, D Szymanski, P Reddy, E Kohn, Z Sitar, R Collazo, ... ECS Transactions 98 (6), 69, 2020 | 7 | 2020 |
Zlatko SitarKobe Steel Distinguished Professor of Materials Science and Engineerign, North Carolina StateDirección de correo verificada de ncsu.edu
