Luca Donetti
Luca Donetti
Departamento de Electrónica, Universidad de Granada
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TítuloCitado porAño
Detecting network communities: a new systematic and efficient algorithm
L Donetti, MA Munoz
Journal of Statistical Mechanics: Theory and Experiment 2004 (10), P10012, 2004
Entangled networks, synchronization, and optimal network topology
L Donetti, PI Hurtado, MA Munoz
Physical Review Letters 95 (18), 188701, 2005
Optimal network topologies: expanders, cages, Ramanujan graphs, entangled networks and all that
L Donetti, F Neri, MA Munoz
Journal of Statistical Mechanics: Theory and Experiment 2006 (08), P08007, 2006
A comprehensive study of the corner effects in Pi-gate MOSFETs including quantum effects
FJG Ruiz, A Godoy, F Gamiz, C Sampedro, L Donetti
IEEE Transactions on Electron Devices 54 (12), 3369-3377, 2007
Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility
L Donetti, F Gámiz, JB Roldán, A Godoy
Journal of applied physics 100 (1), 013701, 2006
Improved spectral algorithm for the detection of network communities
L Donetti, MA Muñoz
AIP Conference Proceedings 779 (1), 104-107, 2005
Trophic coherence determines food-web stability
S Johnson, V Domínguez-García, L Donetti, MA Muñoz
Proceedings of the National Academy of Sciences 111 (50), 17923-17928, 2014
Influence of acoustic phonon confinement on electron mobility in ultrathin silicon on insulator layers
L Donetti, F Gámiz, N Rodriguez, F Jimenez, C Sampedro
Applied physics letters 88 (12), 122108, 2006
L. Donetti, PI Hurtado, and MA Muñoz, Phys. Rev. Lett. 95, 188701 (2005).
L Donetti
Phys. Rev. Lett. 95, 188701, 2005
Modeling the equivalent oxide thickness of surrounding gate SOI devices with high-κ insulators
IM Tienda-Luna, FJG Ruiz, L Donetti, A Godoy, F Gámiz
Solid-State Electronics 52 (12), 1854-1860, 2008
Equivalent Oxide Thickness of Trigate SOI MOSFETs With High- Insulators
FJG Ruiz, IMÍ Tienda-Luna, A Godoy, L Donetti, F Gamiz
IEEE Transactions on Electron Devices 56 (11), 2711-2719, 2009
Simulation of hole mobility in two-dimensional systems
L Donetti, F Gamiz, N Rodriguez
Semiconductor Science and Technology 24 (3), 035016, 2009
Network synchronization: optimal and pessimal scale-free topologies
L Donetti, PI Hurtado, MA Munoz
Journal of Physics A: Mathematical and Theoretical 41 (22), 224008, 2008
Reaching sub-32 nm nodes: ET-FDSOI and BOX optimization
C Sampedro, F Gámiz, L Donetti, A Godoy
Solid-State Electronics 70, 101-105, 2012
Hole mobility in ultrathin double-gate SOI devices: the effect of acoustic phonon confinement
L Donetti, F Gamiz, N Rodriguez, A Godoy
IEEE electron device letters 30 (12), 1338-1340, 2009
L. Donetti and MA Munoz, J. Stat. Mech.: Theory Exp.(2004) P10012.
L Donetti, MA Muñoz
J. Stat. Mech.: Theory Exp. 2004, P10012, 2004
Hole effective mass in silicon inversion layers with different substrate orientations and channel directions
L Donetti, F Gámiz, S Thomas, TE Whall, DR Leadley, PE Hellström, ...
Journal of Applied Physics 110 (6), 063711, 2011
Hole transport in DGSOI devices: Orientation and silicon thickness effects
L Donetti, F Gámiz, N Rodrı, F Jiménez-Molinos, JB Roldán
Solid-State Electronics 54 (2), 191-195, 2010
Lee-Yang zeros and the Ising model on the Sierpinski gasket
R Burioni, D Cassi, L Donetti
Journal of Physics A: Mathematical and General 32 (27), 5017, 1999
A model of the gate capacitance of surrounding gate transistors: Comparison with double-gate MOSFETs
FJG Ruiz, IM Tienda-Luna, A Godoy, L Donetti, F Gamiz
IEEE Transactions on Electron Devices 57 (10), 2477-2483, 2010
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Artículos 1–20