Frédéric Darracq
Frédéric Darracq
Associate professor, Bordeaux university
Dirección de correo verificada de ims-bordeaux.fr
Título
Citado por
Citado por
Año
Backside SEU laser testing for commercial off-the-shelf SRAMs
F Darracq, H Lapuyade, N Buard, F Mounsi, B Foucher, P Fouillat, ...
IEEE Transactions on Nuclear Science 49 (6), 2977-2983, 2002
672002
Influence of laser pulse duration in single event upset testing
A Douin, V Pouget, F Darracq, D Lewis, P Fouillat, P Perdu
2005 8th European Conference on Radiation and Its Effects on Components and …, 2005
542005
Investigation on the SEL sensitive depth of an SRAM using linear and two-photon absorption laser testing
E Faraud, V Pouget, K Shao, C Larue, F Darracq, D Lewis, A Samaras, ...
IEEE Transactions on Nuclear Science 58 (6), 2637-2643, 2011
302011
Laser cross section measurement for the evaluation of single-event effects in integrated circuits
V Pouget, P Fouillat, D Lewis, H Lapuyade, F Darracq, A Touboul
Microelectronics Reliability 40 (8-10), 1371-1375, 2000
292000
Terahertz imaging and tomography as efficient instruments for testing polymer additive manufacturing objects
JB Perraud, AF Obaton, J Bou-Sleiman, B Recur, H Balacey, F Darracq, ...
Applied optics 55 (13), 3462-3467, 2016
232016
Fundamentals of the pulsed laser technique for single-event upset testing
P Fouillat, V Pouget, D McMorrow, F Darracq, S Buchner, D Lewis
Radiation Effects on Embedded Systems, 121-141, 2007
222007
THE HARDNESS-INTENSITY CORRELATION IN BRIGHT GAMMA-RAY BURSTS
AK J.-P. Dezalay, J.-L. Atteia, C. Barat, M. Boer, F. Darracq, P. Goupil, M ...
The Astrophysical Journal 490 (1), L17-L20, 1997
22*1997
Evaluation of recent technologies of non-volatile RAM
T Nuns, S Duzellier, J Bertrand, G Hubert, V Pouget, F Darracq, JP David, ...
2007 9th European Conference on Radiation and Its Effects on Components and …, 2007
192007
Single-event sensitivity of a single SRAM cell
F Darracq, T Beauchene, V Pouget, H Lapuyade, D Lewis, P Fouillat, ...
IEEE Transactions on Nuclear Science 49 (3), 1486-1490, 2002
192002
TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices
K Mukherjee, F Darracq, A Curutchet, N Malbert, N Labat
Microelectronics Reliability 76, 350-356, 2017
132017
Art painting diagnostic before restoration with terahertz and millimeter waves
JP Guillet, M Roux, K Wang, X Ma, F Fauquet, H Balacey, B Recur, ...
Journal of Infrared, Millimeter, and Terahertz Waves 38 (4), 369-379, 2017
122017
Investigation of single event burnout sensitive depth in power MOSFETS
F Darracq, V Pouget, D Lewis, P Fouillat, E Lorfevre, R Ecoffet, F Bezerra
2009 European Conference on Radiation and Its Effects on Components and …, 2009
122009
Low-frequency noise effect on terahertz tomography using thermal detectors
JP Guillet, B Recur, H Balacey, JB Sleiman, F Darracq, D Lewis, ...
Applied optics 54 (22), 6758-6762, 2015
112015
A non-linear model to express laser-induced SRAM cross-sections versus an effective laser LET
F Darracq, H Lapuyade, V Pouget, P Fouillat
ESA Special Publication 536, 107, 2004
102004
Investigation on the single event burnout sensitive volume using two-photon absorption laser testing
F Darracq, N Mbaye, S Azzopardi, V Pouget, E Lorfevre, F Bezerra, ...
IEEE Transactions on Nuclear Science 59 (4), 999-1006, 2012
92012
Optimizing pulsed OBIC technique for ESD defect localization
F Essely, N Guitard, F Darracq, V Pouget, M Bafleur, P Perdu, A Touboul, ...
IEEE Transactions on Device and Materials Reliability 7 (4), 617-624, 2007
92007
Impact of negative bias temperature instability on the single-event upset threshold of a 65 nm SRAM cell
I El Moukhtari, V Pouget, C Larue, F Darracq, D Lewis, P Perdu
Microelectronics Reliability 53 (9-11), 1325-1328, 2013
82013
Imaging the Single Event Burnout sensitive volume of vertical power MOSFETs using the laser Two-Photon Absorption technique
F Darracq, N Mbaye, C Larue, V Pouget, S Azzopardi, E Lorfevre, ...
2011 12th European Conference on Radiation and Its Effects on Components and …, 2011
82011
Evaluation of a design methodology dedicated to dose-rate-hardened linear integrated circuits
Y Deval, H Lapuyade, R Fouillat, H Barnaby, F Darracq, R Briand, ...
IEEE Transactions on Nuclear Science 49 (3), 1468-1473, 2002
82002
Negative bias temperature instability effect on the single event transient sensitivity of a 65 nm CMOS technology
I El Moukhtari, V Pouget, F Darracq, C Larue, P Perdu, D Lewis
IEEE Transactions on Nuclear Science 60 (4), 2635-2639, 2013
72013
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20