| Electronic nature of the enhanced conductivity in YSZ-STO multilayers deposited by PLD A Cavallaro, M Burriel, J Roqueta, A Apostolidis, A Bernardi, A Tarancón, ... Solid State Ionics 181 (13-14), 592-601, 2010 | 124 | 2010 |
| On-chip Si/SiOx microtube refractometer A Bernardi, S Kiravittaya, A Rastelli, R Songmuang, DJ Thurmer, ... Applied Physics Letters 93 (9), 2008 | 120 | 2008 |
| Composition dependence of the phonon strain shift coefficients of SiGe alloys revisited JS Reparaz, A Bernardi, AR Goñi, MI Alonso, M Garriga Applied Physics Letters 92 (8), 2008 | 71 | 2008 |
| Cross-plane thermal conductivity reduction of vertically uncorrelated Ge∕ Si quantum dot superlattices J Alvarez-Quintana, X Alvarez, J Rodriguez-Viejo, D Jou, ... Applied physics letters 93 (1), 2008 | 40 | 2008 |
| Probing residual strain in InGaAs∕ GaAs micro-origami tubes by micro-Raman spectroscopy A Bernardi, AR Goni, MI Alonso, F Alsina, H Scheel, PO Vaccaro, N Saito Journal of applied physics 99 (6), 2006 | 37 | 2006 |
| Phonon pressure coefficient as a probe of the strain status of self-assembled quantum dots JS Reparaz, A Bernardi, AR Goñi, PD Lacharmoise, MI Alonso, M Garriga, ... Applied Physics Letters 91 (8), 2007 | 21 | 2007 |
| Density control on self-assembling of Ge islands using carbon-alloyed strained SiGe layers A Bernardi, MI Alonso, AR Goñi, JO Ossó, M Garriga Applied physics letters 89 (10), 2006 | 20 | 2006 |
| Influence of Si interdiffusion on carbon-induced growth of Ge quantum dots: a strategy for tuning island density A Bernardi, JO Ossó, MI Alonso, AR Goñi, M Garriga Nanotechnology 17 (10), 2602, 2006 | 20 | 2006 |
| Site-controlled growth of Ge nanostructures on Si (100) via pulsed laser deposition nanostenciling CV Cojocaru, A Bernardi, JS Reparaz, MI Alonso, JM MacLeod, ... Applied Physics Letters 91 (11), 2007 | 19 | 2007 |
| Evolution of strain and composition during growth and capping of Ge quantum dots with different morphologies A Bernardi, MI Alonso, JS Reparaz, AR Goni, PD Lacharmoise, JO Osso, ... Nanotechnology 18 (47), 475401, 2007 | 17 | 2007 |
| A systematic study of the chemical etching process on periodically poled lithium niobate structures N Argiolas, M Bazzan, A Bernardi, E Cattaruzza, P Mazzoldi, P Schiavuta, ... Materials Science and Engineering: B 118 (1-3), 150-154, 2005 | 17 | 2005 |
| Nanocalorimetric high-temperature characterization of ultrathin films of a-Ge AF Lopeandía, E Leon-Gutierrez, G Garcia, F Pi, A Bernardi, AR Goñi, ... Materials science in semiconductor processing 9 (4-5), 806-811, 2006 | 15 | 2006 |
| Raman scattering interferences as a probe of vertical coherence in multilayers of carbon-induced Ge quantum dots PD Lacharmoise, A Bernardi, AR Goni, MI Alonso, M Garriga, ... Physical Review B 76 (15), 155311, 2007 | 14 | 2007 |
| Radiografía de los micro-influencers en la economía de las plataformas digitales: Insatisfacción, trabajo gratuito y desigualdad en la retribución IV Simón, CF Rovira, SG Luque, A Bernardi Revista latina de comunicación social, 21, 2022 | 12 | 2022 |
| Ellipsometric study of crystallization of amorphous Ge thin films embedded in SiO2 MI Alonso, M Garriga, A Bernardi, AR Goni, AF Lopeandia, G Garcia, ... Thin Solid Films 516 (12), 4277-4281, 2008 | 12 | 2008 |
| Topographic investigation of ferroelectric domain structures in periodically-poled lithium niobate crystals by a profilometer M Bazzan, N Argiolas, A Bernardi, P Mazzoldi, C Sada Materials characterization 51 (2-3), 177-183, 2003 | 11 | 2003 |
| Crystallisation of amorphous germanium thin films G Garcia, AF Lopeandia, A Bernardi, MI Alonso, AR Goni, JL Labar, ... Journal of Nanoscience and Nanotechnology 9 (5), 3013-3019, 2009 | 9 | 2009 |
| Measurement of phonon pressure coefficients for a precise determination of deformation potentials in SiGe alloys JS Reparaz, AR Goni, A Bernardi, MI Alonso, M Garriga physica status solidi (b) 246 (3), 548-552, 2009 | 9 | 2009 |
| Modified Stranski–Krastanov growth in Ge/Si heterostructures via nanostenciled pulsed laser deposition JM MacLeod, CV Cojocaru, F Ratto, C Harnagea, A Bernardi, MI Alonso, ... Nanotechnology 23 (6), 065603, 2012 | 7 | 2012 |
| Ellipsometric measurements of quantum confinement effects on higher interband transitions of Ge nanocrystals MI Alonso, M Garriga, A Bernardi, AR Goni, AF Lopeandia, G Garcia, ... physica status solidi (a) 205 (4), 888-891, 2008 | 5 | 2008 |
Maria Isabel AlonsoInstitut de Ciència de Materials de Barcelona (ICMAB-CSIC)Verified email at icmab.es
