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Alessandro Bernardi
Alessandro Bernardi
ICMAB
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Electronic nature of the enhanced conductivity in YSZ-STO multilayers deposited by PLD
A Cavallaro, M Burriel, J Roqueta, A Apostolidis, A Bernardi, A Tarancón, ...
Solid State Ionics 181 (13-14), 592-601, 2010
1192010
On-chip microtube refractometer
A Bernardi, S Kiravittaya, A Rastelli, R Songmuang, DJ Thurmer, ...
Applied Physics Letters 93 (9), 094106, 2008
1172008
Composition dependence of the phonon strain shift coefficients of SiGe alloys revisited
JS Reparaz, A Bernardi, AR Goñi, MI Alonso, M Garriga
Applied Physics Letters 92 (8), 081909, 2008
692008
Cross-plane thermal conductivity reduction of vertically uncorrelated quantum dot superlattices
J Alvarez-Quintana, X Alvarez, J Rodriguez-Viejo, D Jou, ...
Applied physics letters 93 (1), 013112, 2008
372008
Probing residual strain in micro-origami tubes by micro-Raman spectroscopy
A Bernardi, AR Goni, MI Alonso, F Alsina, H Scheel, PO Vaccaro, N Saito
Journal of applied physics 99 (6), 063512, 2006
352006
Phonon pressure coefficient as a probe of the strain status of self-assembled quantum dots
JS Reparaz, A Bernardi, AR Goñi, PD Lacharmoise, MI Alonso, M Garriga, ...
Applied Physics Letters 91 (8), 081914, 2007
212007
Density control on self-assembling of Ge islands using carbon-alloyed strained SiGe layers
A Bernardi, MI Alonso, AR Goñi, JO Ossó, M Garriga
Applied physics letters 89 (10), 101921, 2006
202006
Influence of Si interdiffusion on carbon-induced growth of Ge quantum dots: a strategy for tuning island density
A Bernardi, JO Ossó, MI Alonso, AR Goñi, M Garriga
Nanotechnology 17 (10), 2602, 2006
202006
Site-controlled growth of Ge nanostructures on Si (100) via pulsed laser deposition nanostenciling
CV Cojocaru, A Bernardi, JS Reparaz, MI Alonso, JM MacLeod, ...
Applied Physics Letters 91 (11), 113112, 2007
172007
Nanocalorimetric high-temperature characterization of ultrathin films of a-Ge
AF Lopeandía, E Leon-Gutierrez, G Garcia, F Pi, A Bernardi, AR Goñi, ...
Materials science in semiconductor processing 9 (4-5), 806-811, 2006
152006
Evolution of strain and composition during growth and capping of Ge quantum dots with different morphologies
A Bernardi, MI Alonso, JS Reparaz, AR Goni, PD Lacharmoise, JO Osso, ...
Nanotechnology 18 (47), 475401, 2007
142007
Raman scattering interferences as a probe of vertical coherence in multilayers of carbon-induced Ge quantum dots
PD Lacharmoise, A Bernardi, AR Goni, MI Alonso, M Garriga, ...
Physical Review B 76 (15), 155311, 2007
142007
A systematic study of the chemical etching process on periodically poled lithium niobate structures
N Argiolas, M Bazzan, A Bernardi, E Cattaruzza, P Mazzoldi, P Schiavuta, ...
Materials Science and Engineering: B 118 (1-3), 150-154, 2005
142005
Topographic investigation of ferroelectric domain structures in periodically-poled lithium niobate crystals by a profilometer
M Bazzan, N Argiolas, A Bernardi, P Mazzoldi, C Sada
Materials characterization 51 (2-3), 177-183, 2003
112003
Ellipsometric study of crystallization of amorphous Ge thin films embedded in SiO2
MI Alonso, M Garriga, A Bernardi, AR Goni, AF Lopeandia, G Garcia, ...
Thin Solid Films 516 (12), 4277-4281, 2008
102008
Measurement of phonon pressure coefficients for a precise determination of deformation potentials in SiGe alloys
JS Reparaz, AR Goni, A Bernardi, MI Alonso, M Garriga
physica status solidi (b) 246 (3), 548-552, 2009
92009
Crystallisation of amorphous germanium thin films
G Garcia, AF Lopeandia, A Bernardi, MI Alonso, AR Goni, JL Labar, ...
Journal of Nanoscience and Nanotechnology 9 (5), 3013-3019, 2009
82009
Modified Stranski–Krastanov growth in Ge/Si heterostructures via nanostenciled pulsed laser deposition
JM MacLeod, CV Cojocaru, F Ratto, C Harnagea, A Bernardi, MI Alonso, ...
Nanotechnology 23 (6), 065603, 2012
62012
Ellipsometric measurements of quantum confinement effects on higher interband transitions of Ge nanocrystals
MI Alonso, M Garriga, A Bernardi, AR Goni, AF Lopeandia, G Garcia, ...
physica status solidi (a) 205 (4), 888-891, 2008
52008
Growth dynamics of C-induced Ge dots on Si1− xGex strained layers
A Bernardi, MI Alonso, AR Goñi, JO Ossó, M Garriga
Surface science 601 (13), 2783-2786, 2007
52007
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20