| An assessment of wide bandgap semiconductors for power devices JL Hudgins, GS Simin, E Santi, MA Khan IEEE Transactions on power electronics 18 (3), 907-914, 2003 | 671 | 2003 |
| High power current sensorless bidirectional 16-phase interleaved DC-DC converter for hybrid vehicle application L Ni, DJ Patterson, JL Hudgins IEEE Transactions on Power electronics 27 (3), 1141-1151, 2011 | 237 | 2011 |
| Circuit simulator models for the diode and IGBT with full temperature dependent features PR Palmer, E Santi, JL Hudgins, X Kang, JC Joyce, PY Eng IEEE Transactions on Power Electronics 18 (5), 1220-1229, 2003 | 221 | 2003 |
| Modeling of wide bandgap power semiconductor devices—Part I HA Mantooth, K Peng, E Santi, JL Hudgins IEEE Transactions on Electron Devices 62 (2), 423-433, 2014 | 200 | 2014 |
| Transient electrothermal simulation of power semiconductor devices B Du, JL Hudgins, E Santi, AT Bryant, PR Palmer, HA Mantooth IEEE Transactions on power electronics 25 (1), 237-248, 2009 | 193 | 2009 |
| Exploration of power device reliability using compact device models and fast electrothermal simulation AT Bryant, PA Mawby, PR Palmer, E Santi, JL Hudgins IEEE transactions on industry applications 44 (3), 894-903, 2008 | 183 | 2008 |
| Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and pin diode models AT Bryant, X Kang, E Santi, PR Palmer, JL Hudgins IEEE transactions on power electronics 21 (2), 295-309, 2006 | 161 | 2006 |
| New developments in gallium nitride and the impact on power electronics MA Khan, G Simin, SG Pytel, A Monti, E Santi, JL Hudgins 2005 IEEE 36th Power Electronics Specialists Conference, 15-26, 2005 | 151 | 2005 |
| Characterization and modeling of high-voltage field-stop IGBTs X Kang, A Caiafa, E Santi, JL Hudgins, PR Palmer IEEE Transactions on Industry Applications 39 (4), 922-928, 2003 | 115 | 2003 |
| Power electronic devices in the future JL Hudgins IEEE Journal of Emerging and Selected Topics in Power Electronics 1 (1), 11-17, 2013 | 102 | 2013 |
| Review of technologies for current-limiting low-voltage circuit breakers CW Brice, RA Dougal, JL Hudgins IEEE Transactions on Industry Applications 32 (5), 1005-1010, 1996 | 99 | 1996 |
| A real-time thermal model for monitoring of power semiconductor devices TK Gachovska, B Tian, JL Hudgins, W Qiao, JF Donlon IEEE Transactions on Industry Applications 51 (4), 3361-3367, 2015 | 98 | 2015 |
| Modeling of IGBT resistive and inductive turn-on behavior AT Bryant, L Lu, E Santi, JL Hudgins, PR Palmer IEEE Transactions on Industry Applications 44 (3), 904-914, 2008 | 95 | 2008 |
| Permanent magnet generator design and control for large wind turbines X Yang, D Patterson, J Hudgins 2012 IEEE Power Electronics and Machines in Wind Applications, 1-5, 2012 | 86 | 2012 |
| Modeling of wide-bandgap power semiconductor devices—Part II E Santi, K Peng, HA Mantooth, JL Hudgins IEEE Transactions on Electron Devices 62 (2), 434-442, 2014 | 85 | 2014 |
| Thermal analysis of high-power modules C Van Godbold, VA Sankaran, JL Hudgins IEEE transactions on power electronics 12 (1), 3-11, 1997 | 82 | 1997 |
| Wide and narrow bandgap semiconductors for power electronics: A new valuation JL Hudgins Journal of Electronic materials 32, 471-477, 2003 | 78 | 2003 |
| Power SiC DMOSFET model accounting for nonuniform current distribution in JFET region R Fu, A Grekov, J Hudgins, A Mantooth, E Santi IEEE Transactions on Industry Applications 48 (1), 181-190, 2011 | 74 | 2011 |
| Parameter extraction for a physics-based circuit simulator IGBT model X Kang, E Santi, JL Hudgins, PR Palmer, JF Donlon Eighteenth Annual IEEE Applied Power Electronics Conference and Exposition …, 2003 | 73 | 2003 |
| Physical modeling of fast pin diodes with carrier lifetime zoning, part I: Device model AT Bryant, L Lu, E Santi, PR Palmer, JL Hudgins IEEE transactions on power electronics 23 (1), 189-197, 2008 | 65 | 2008 |
