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Minho Kim
Minho Kim
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Cited by
Cited by
Year
Defect reduction of SiNx embedded m-plane GaN grown by hydride vapor phase epitaxy
S Woo, M Kim, B So, G Yoo, J Jang, K Lee, O Nam
Journal of crystal growth 407, 6-10, 2014
112014
Effect of nitridation on the orientation of GaN layer grown on m-sapphire substrates using hydride vapor phase epitaxy
Y Won, B So, S Woo, D Lee, M Kim, K Nam, S Im, KB Shim, O Nam
Journal of Ceramic Processing Research 15 (2), 61-65, 2014
112014
Growth of Semipolar InGaN Quantum Well Structure Using Self-Organized Nano-Masks on m-Sapphire
Y Ryu, J Jeong, J Jang, K Lee, D Min, J Kim, M Kim, S Moon, G Yoo, ...
Journal of Nanoscience and Nanotechnology 13 (9), 6429-6433, 2013
52013
On/off-state noise characteristics in AlGaN/GaN HFET with AlN buffer layer
KS Im, U Choi, M Kim, J Choi, HS Kim, HY Cha, SJ An, O Nam
Applied Physics Letters 120 (1), 2022
42022
Novel in situ self-separation of a 2 in. free-standing m-plane GaN wafer from an m-plane sapphire substrate by HCl chemical reaction etching in hydride vapor-phase epitaxy
S Woo, S Lee, U Choi, H Lee, M Kim, J Han, O Nam
CrystEngComm 18 (40), 7690-7695, 2016
42016
Void containing AlN layer grown on AlN nanorods fabricated by polarity selective epitaxy and etching method
B So, J Lee, C Cheon, J Lee, U Choi, M Kim, J Song, J Chang, O Nam
AIP Advances 11 (4), 2021
32021
Properties of Si doped (11-20) a-plane GaN grown with different buffer layers
C Jung, J Hwang, G Yoo, D Min, Y Ryu, S Moon, M Kim, O Nam, K Shim
Journal of Ceramic Processing Research 15 (2), 2014
32014
Growth of self-assembled nanovoids embedded AlN layer on a low-temperature buffer by metal organic chemical vapor deposition
M Kim, U Choi, K Kim, O Nam
Thin Solid Films 752, 139261, 2022
22022
Microstructural Gradational Properties of Sn-Doped Gallium Oxide Heteroepitaxial Layers Grown Using Mist Chemical Vapor Deposition
KH Kim, MT Ha, H Lee, M Kim, O Nam, YJ Shin, SM Jeong, SY Bae
Materials 15 (3), 1050, 2022
22022
Defect reduction in m-plane GaN on m-sapphire via lateral epitaxial overgrowth by hydride vapor phase epitaxy
M Kim, S Woo, B So, KB Shim, O Nam
Journal of Ceramic Processing Research 17 (10), 1015-1018, 2016
22016
Size‐Dependent Characteristics of InGaN‐Based Blue and Green Micro‐Light‐Emitting Diodes
S Mohan, J Jeong, M Kim, Y Heo, J Park, J Lee, J Kim, J Heo, O Nam
physica status solidi (a), 2300642, 2024
2024
Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistors with AlN Buffer on SiC Substrate at 3.5 GHz
M Kim, U Choi, K Kim, Y Heo, K Lee, S Lee, O Nam
physica status solidi (a) 220 (16), 2200826, 2023
2023
Far-UVC emission of polarity-engineered AlGaN MQW using carbon nanotube-based cold cathode electron beam
U Choi, ST Yoo, M Kim, B So, C Cheon, M Yang, M Lee, KC Park, O Nam
Applied Physics Letters 122 (9), 2023
2023
Effects of Si-doped GaN insert layer in AlGaN/GaN/GaN: Si/AlN DH-HEMT structure
D Jung, M Kim, U Choi, K Kim, O Nam
Solid-State Electronics 199, 108482, 2023
2023
Effects of NH3 pre-treatment time on nitrogen-polar GaN grown on carbon-face 4H-SiC using high-temperature metal-organic chemical vapor deposition
M Kim, U Choi, K Lee, D Jung, T Kwak, B So, KR Ku, O Nam
Journal of Ceramic Processing Research 21 (5), 579-585, 2020
2020
Improvement of crystal quality in semipolar GaN layer by using self-organized nanomasks on m-sapphire
Y Ryu, J Jeong, J Jang, K Lee, D Min, J Kim, M Kim, S Moon, G Yoo, ...
Journal of Ceramic Processing Research 14 (4), 587-590, 2013
2013
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