Javier Mateos
Javier Mateos
Catedrático de Electrónica
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Voltage tuneable terahertz emission from a ballistic nanometer transistor
J Lusakowski, W Knap, N Dyakonova, L Varani, J Mateos, T Gonzalez, ...
Journal of applied physics 97 (6), 064307, 2005
1482005
Monte Carlo simulator for the design optimization of low-noise HEMTs
J Mateos, T González, D Pardo, V Hoël, A Cappy
IEEE Transactions on Electron Devices 47 (10), 1950-1956, 2000
1262000
Improved Monte Carlo algorithm for the simulation of/spl delta/-doped AlInAs/GaInAs HEMTs
J Mateos, T González, D Pardo, V Hoel, H Happy, A Cappy
IEEE transactions on electron devices 47 (1), 250-253, 2000
1202000
Microwave detection at 110 GHz by nanowires with broken symmetry
C Balocco, AM Song, M Åberg, A Forchel, T González, J Mateos, ...
Nano Letters 5 (7), 1423-1427, 2005
1102005
Ballistic nanodevices for terahertz data processing: Monte Carlo simulations
J Mateos, BG Vasallo, D Pardo, T González, JS Galloo, Y Roelens, ...
Nanotechnology 14 (2), 117, 2003
1032003
Operation and high-frequency performance of nanoscale unipolar rectifying diodes
J Mateos, BG Vasallo, D Pardo, T González
Applied Physics Letters 86 (21), 212103, 2005
1012005
Microscopic modeling of nonlinear transport in ballistic nanodevices
J Mateos, BG Vasallo, D Pardo, T González, JS Galloo, S Bollaert, ...
IEEE Transactions on Electron Devices 50 (9), 1897-1905, 2003
1012003
Universality of the 1/3 shot-noise suppression factor in nondegenerate diffusive conductors
T González, C González, J Mateos, D Pardo, L Reggiani, OM Bulashenko, ...
Physical review letters 80 (13), 2901, 1998
901998
Comparison between the dynamic performance of double-and single-gate AlInAs/InGaAs HEMTs
BG Vasallo, N Wichmann, S Bollaert, Y Roelens, A Cappy, T González, ...
IEEE Transactions on Electron Devices 54 (11), 2815-2822, 2007
802007
Terahertz Gunn-like oscillations in InGaAs/InAlAs planar diodes
S Pérez, T González, D Pardo, J Mateos
Journal of applied physics 103 (9), 094516, 2008
762008
Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis
J Mateos, T González, D Pardo, V Hoel, A Cappy
Semiconductor science and technology 14 (9), 864, 1999
651999
Nonlinear effects in T-branch junctions
J Mateos, BG Vasallo, D Pardo, T González, E Pichonat, JS Galloo, ...
IEEE Electron Device Letters 25 (5), 235-237, 2004
622004
A 520–620-GHz Schottky receiver front-end for planetary science and remote sensing with 1070 K–1500 K DSB noise temperature at room temperature
J Treuttel, L Gatilova, A Maestrini, D Moro-Melgar, F Yang, F Tamazouzt, ...
IEEE transactions on terahertz science and technology 6 (1), 148-155, 2015
612015
Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels
P Sangaré, G Ducournau, B Grimbert, V Brandli, M Faucher, C Gaquière, ...
Journal of Applied Physics 113 (3), 034305, 2013
572013
Influence of the surface charge on the operation of ballistic T-branch junctions: a self-consistent model for Monte Carlo simulations
I Iñiguez-De-La-Torre, J Mateos, T González, D Pardo, JS Galloo, ...
Semiconductor science and technology 22 (6), 663, 2007
562007
Effect of long-range Coulomb interaction on shot-noise suppression in ballistic transport
T González, OM Bulashenko, J Mateos, D Pardo, L Reggiani
Physical Review B 56 (11), 6424, 1997
511997
Phonon black-body radiation limit for heat dissipation in electronics
J Schleeh, J Mateos, I Íñiguez-de-la-Torre, N Wadefalk, PA Nilsson, ...
Nature materials 14 (2), 187-192, 2015
502015
Searching for THz Gunn oscillations in GaN planar nanodiodes
A Íñiguez-de-la-Torre, I Íñiguez-de-la-Torre, J Mateos, T González, ...
Journal of Applied Physics 111 (11), 113705, 2012
492012
Design optimization of AlInAs-GaInAs HEMTs for high-frequency applications
JM Lopez, T González, D Pardo, S Bollaert, T Parenty, A Cappy
IEEE transactions on Electron Devices 51 (4), 521-528, 2004
482004
100nm InAlAs/InGaAs double-gate HEMT using transferred substrate
N Wichmann, I Duszynski, S Bollaert, J Mateos, X Wallart, A Cappy
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
442004
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20