| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 576 | 2019 |
| Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks S Chen, MR Mahmoodi, Y Shi, C Mahata, B Yuan, X Liang, C Wen, F Hui, ... Nature Electronics 3 (10), 638-645, 2020 | 268 | 2020 |
| Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching N Xiao, MA Villena, B Yuan, S Chen, B Wang, M Eliáš, Y Shi, F Hui, X Jing, ... Advanced Functional Materials 27 (33), 1700384, 2017 | 85 | 2017 |
| Graphene–boron nitride–graphene cross-point memristors with three stable resistive states K Zhu, X Liang, B Yuan, MA Villena, C Wen, T Wang, S Chen, F Hui, Y Shi, ... ACS applied materials & interfaces 11 (41), 37999-38005, 2019 | 68 | 2019 |
| Design of materials configuration for optimizing redox‐based resistive switching memories S Chen, I Valov Advanced Materials 34 (3), 2105022, 2022 | 40 | 2022 |
| 150 nm× 200 nm cross‐point hexagonal boron nitride‐based memristors B Yuan, X Liang, L Zhong, Y Shi, F Palumbo, S Chen, F Hui, X Jing, ... Advanced Electronic Materials 6 (12), 1900115, 2020 | 29 | 2020 |
| Memristive electronic synapses made by anodic oxidation S Chen, S Noori, MA Villena, Y Shi, T Han, Y Zuo, MP Pedeferri, ... Chemistry of Materials 31 (20), 8394-8401, 2019 | 29 | 2019 |
| Electroforming in metal-oxide memristive synapses T Wang, Y Shi, FM Puglisi, S Chen, K Zhu, Y Zuo, X Li, X Jing, T Han, ... ACS applied materials & interfaces 12 (10), 11806-11814, 2020 | 24 | 2020 |
| Variability of metal/h-BN/metal memristors grown via chemical vapor deposition on different materials MA Villena, F Hui, X Liang, Y Shi, B Yuan, X Jing, K Zhu, S Chen, ... Microelectronics Reliability 102, 113410, 2019 | 21 | 2019 |
| On the limits of scalpel AFM for the 3D electrical characterization of nanomaterials S Chen, L Jiang, M Buckwell, X Jing, Y Ji, E Grustan‐Gutierrez, F Hui, ... Advanced Functional Materials 28 (52), 1802266, 2018 | 21 | 2018 |
| Electrochemical-Memristor-Based Artificial Neurons and Synapses—Fundamentals, Applications, and Challenges S Chen, T Zhang, S Tappertzhofen, Y Yang, I Valov Advanced Materials 35 (37), 2301924, 2023 | 20 | 2023 |
| Graphene coated nanoprobes: A review F Hui, S Chen, X Liang, B Yuan, X Jing, Y Shi, M Lanza Crystals 7 (9), 269, 2017 | 16 | 2017 |
| Emerging scanning probe–based setups for advanced nanoelectronic research F Hui, C Wen, S Chen, E Koren, R Dechter, D Lewis, M Lanza Advanced Functional Materials 30 (18), 1902776, 2020 | 14 | 2020 |
| Impact of Zr top electrode on tantalum oxide-based electrochemical metallization resistive switching memory: towards synaptic functionalities N Raeis-Hosseini, S Chen, C Papavassiliou, I Valov RSC advances 12 (22), 14235-14245, 2022 | 5 | 2022 |
| Chemical influence of carbon interface layers in metal/oxide resistive switches DY Cho, K Kim, KS Lee, M Lubben, S Chen, I Valov ACS applied materials & interfaces 15 (14), 18528-18536, 2023 | 4 | 2023 |
| 150 nm× 200 nm cross point hexagonal boron nitride based memristors with ultra-low currents in high resistive state X Liang, B Yuan, Y Shi, F Palumbo, S Chen, F Hui, X Jing, MA Villena, ... 2019 Electron Devices Technology and Manufacturing Conference (EDTM), 258-260, 2019 | 3 | 2019 |
| Tristate resistive switching in heterogenous van der Waals dielectric structures K Zhu, X Liang, B Yuan, MA Villena, C Wen, T Wang, S Chen, M Lanza, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2019 | 2 | 2019 |
| Memristive devices for metrological applications V Cabral, A Cultrera, S Chen, J Pereira, L Ribeiro, I Godinho, L Boarino, ... ACTA IMEKO 12 (3), 2023 | 1 | 2023 |
| Influence of active electrode impurity on memristive characteristics of ECM devices F Michieletti, S Chen, C Weber, C Ricciardi, T Ohno, I Valov Journal of Solid State Electrochemistry, 1-7, 2024 | | 2024 |
| Electrochemical ohmic memristors for continual learning S Chen, Z Yang, H Hartmann, A Besmehn, Y Yang, I Valov | | 2023 |
