Jean-Baptiste Laloë
Jean-Baptiste Laloë
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TítuloCitado porAño
Electrically tunable surface-to-bulk coherent coupling in topological insulator thin films
H Steinberg, JB Laloë, V Fatemi, JS Moodera, P Jarillo-Herrero
Physical Review B 84 (23), 233101, 2011
Ferromagnetism in thin-film Cr-doped topological insulator Bi2Se3
PPJ Haazen, JB Laloë, TJ Nummy, HJM Swagten, P Jarillo-Herrero, ...
Applied Physics Letters 100 (8), 082404, 2012
Initial/final state selection of the spin polarization in electron tunneling across an epitaxial interface
H Kurebayashi, SJ Steinmuller, JB Laloe, T Trypiniotis, S Easton, ...
Applied Physics Letters 91 (10), 102114, 2007
In-plane magnetoresistance and magnetization reversal of cobalt antidot arrays
TJ Meng, JB Laloë, SN Holmes, A Husmann, GAC Jones
Journal of Applied Physics 106 (3), 033901, 2009
Effect of MgO barriers on ferromagnetic metallic layers studied by polarized neutron reflectivity
JB Laloë, A Ionescu, S Easton, NJ Steinke, TJ Hayward, H Kurebayashi, ...
Applied Physics Letters 93 (1), 012505, 2008
De-oxidation of metal gate for improved gate performance
H Liu, WP Peng, JB Laloe
US Patent App. 14/219,039, 2015
Methods of forming replacement gate structures for NFET semiconductor devices and devices having such gate structures
JB Laloe, H Liu, W Kim
US Patent 8,803,254, 2014
Spin-injection device prospects for half-metallic interfaces
R Mansell, JB Laloë, SN Holmes, PKJ Wong, YB Xu, I Farrer, GAC Jones, ...
Journal of applied physics 108 (3), 034507, 2010
Room-Temperature Study of the Magnetic Moment of Ultrathin Fe Films on GaAs
JB Laloë, A Ionescu, CAF Vaz, M Tselepi, G Wastlbauer, RM Dalgliesh, ...
IEEE transactions on magnetics 42 (10), 2933-2935, 2006
Spontaneous symmetry breaking in vortex systems with two repulsive lengthscales
PJ Curran, WM Desoky, MV Milos̆ević, A Chaves, JB Laloë, JS Moodera, ...
Scientific reports 5, 15569, 2015
Molecular-Beam Epitaxially Grown MgB2 Thin Films and Superconducting Tunnel Junctions
JB Laloë, TH Kim, JS Moodera
Advances in Condensed Matter Physics 2011, 2011
Schottky and tunneling behavior of Fe/MgO/Ge (100) structures
JB Laloë, MC Hickey, J Chang, JS Moodera
Applied Physics Letters 97 (22), 222105, 2010
A novel low resistance gate fill for extreme gate length scaling at 20nm and beyond for gate-last high-k/metal gate CMOS technology
U Kwon, K Wong, SA Krishnan, L Econimikos, X Zhang, C Ortolland, ...
2012 Symposium on VLSI Technology (VLSIT), 29-30, 2012
Control of epitaxy-induced magnetocrystalline anisotropy in a molecular beam epitaxy–grown pseudo-spin-valve
JB Laloë, A Ionescu, TJ Hayward, J Llandro, JAC Bland, ME Vickers
Applied Physics Letters 92 (8), 082505, 2008
InGaAs spin light emitting diodes measured in the Faraday and oblique Hanle geometries
R Mansell, JB Laloë, SN Holmes, A Petrou, I Farrer, GAC Jones, ...
Journal of Physics D: Applied Physics 49 (16), 165103, 2016
Observation of Phonon Replica Emission in an In-Situ Fe/GaAs Spin LED
R Mansell, JB Laloë, SN Holmes, I Khan, M Yasar, A Petrou, I Farrer, ...
IEEE Transactions on Magnetics 44 (11), 2666-2669, 2008
Elimination of tungsten-voids in middle-of-line contacts for advanced planar cmos and finfet technology
WP Peng, M Chi, G Derderian, K Das, Y Zhang, JB Laloe, D Deniz, S Patil, ...
2016 China Semiconductor Technology International Conference (CSTIC), 1-4, 2016
Spin-current-induced dynamics in ferromagnetic nanopillars of lateral spin-valve structures
JB Laloë, T Yang, T Kimura, Y Otani
Journal of Applied Physics 105 (7), 07D110, 2009
Pure spin-current-induced magnetization switching
T Yang, T Kimura, JB Laloë, Y Otani
Spintronics 7036, 70361B, 2008
Double barrier layer sets for contacts in semiconductor device
A Kumar, SK Mishra, JBJ Laloë, WZ Gao
US Patent 10,453,747, 2019
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