Seguir
Jean-Baptiste Laloë
Jean-Baptiste Laloë
Dirección de correo verificada de globalfoundries.com
Título
Citado por
Citado por
Año
Electrically tunable surface-to-bulk coherent coupling in topological insulator thin films
H Steinberg, JB Laloë, V Fatemi, JS Moodera, P Jarillo-Herrero
Physical Review B 84 (23), 233101, 2011
3792011
Ferromagnetism in thin-film Cr-doped topological insulator Bi2Se3
PPJ Haazen, JB Laloë, TJ Nummy, HJM Swagten, P Jarillo-Herrero, ...
Applied Physics Letters 100 (8), 2012
2062012
Initial/final state selection of the spin polarization in electron tunneling across an epitaxial Fe∕ GaAs (001) interface
H Kurebayashi, SJ Steinmuller, JB Laloe, T Trypiniotis, S Easton, ...
Applied Physics Letters 91 (10), 2007
362007
Spontaneous symmetry breaking in vortex systems with two repulsive lengthscales
PJ Curran, WM Desoky, MV Milos̆ević, A Chaves, JB Laloë, JS Moodera, ...
Scientific Reports 5 (1), 15569, 2015
172015
In-plane magnetoresistance and magnetization reversal of cobalt antidot arrays
TJ Meng, JB Laloë, SN Holmes, A Husmann, GAC Jones
Journal of Applied Physics 106 (3), 2009
142009
De-oxidation of metal gate for improved gate performance
H Liu, WP Peng, JB Laloe
US Patent App. 14/219,039, 2015
102015
Effect of MgO barriers on ferromagnetic metallic layers studied by polarized neutron reflectivity
JB Laloë, A Ionescu, S Easton, NJ Steinke, TJ Hayward, H Kurebayashi, ...
Applied Physics Letters 93 (1), 2008
102008
Methods of forming replacement gate structures for NFET semiconductor devices and devices having such gate structures
JB Laloe, H Liu, W Kim
US Patent 8,803,254, 2014
92014
Molecular-Beam Epitaxially Grown MgB2 Thin Films and Superconducting Tunnel Junctions
JB Laloë, TH Kim, JS Moodera
Advances in Condensed Matter Physics 2011, 2011
92011
Spin-injection device prospects for half-metallic Fe3O4: Al0. 1Ga0. 9As interfaces
R Mansell, JB Laloë, SN Holmes, PKJ Wong, YB Xu, I Farrer, GAC Jones, ...
Journal of Applied Physics 108 (3), 2010
92010
Room-Temperature Study of the Magnetic Moment of Ultrathin Fe Films on GaAs
JB Laloë, F Van Belle, A Ionescu, CAF Vaz, M Tselepi, G Wastlbauer, ...
IEEE transactions on magnetics 42 (10), 2933-2935, 2006
92006
A novel low resistance gate fill for extreme gate length scaling at 20nm and beyond for gate-last high-k/metal gate CMOS technology
U Kwon, K Wong, SA Krishnan, L Econimikos, X Zhang, C Ortolland, ...
2012 Symposium on VLSI Technology (VLSIT), 29-30, 2012
82012
Schottky and tunneling behavior of Fe/MgO/Ge (100) structures
JB Laloë, MC Hickey, J Chang, JS Moodera
Applied Physics Letters 97 (22), 2010
62010
Elimination of tungsten-voids in middle-of-line contacts for advanced planar cmos and finfet technology
WP Peng, M Chi, G Derderian, K Das, Y Zhang, JB Laloe, D Deniz, S Patil, ...
2016 China Semiconductor Technology International Conference (CSTIC), 1-4, 2016
52016
Control of epitaxy-induced magnetocrystalline anisotropy in a molecular beam epitaxy–grown Co∕ MgO∕ Fe∕ MgO (100) pseudo-spin-valve
JB Laloë, A Ionescu, TJ Hayward, J Llandro, JAC Bland, ME Vickers
Applied Physics Letters 92 (8), 2008
42008
Strategies for Reducing Particle Defects in Ti and TiN Thin-Film Deposition Processes
A Kumar, N Bhattacharjee, B Patel, JB Laloë, OO Famodu, I Ferain
IEEE Transactions on Semiconductor Manufacturing 32 (1), 48-53, 2018
32018
InGaAs spin light emitting diodes measured in the Faraday and oblique Hanle geometries
R Mansell, JB Laloë, SN Holmes, A Petrou, I Farrer, GAC Jones, ...
Journal of Physics D: Applied Physics 49 (16), 165103, 2016
32016
Observation of Phonon Replica Emission in an In-Situ Fe/GaAs Spin LED
R Mansell, JB Laloë, SN Holmes, I Khan, M Yasar, A Petrou, I Farrer, ...
IEEE Transactions on Magnetics 44 (11), 2666-2669, 2008
32008
Double barrier layer sets for contacts in semiconductor device
A Kumar, SK Mishra, JBJ Laloë, WZ Gao
US Patent 10,453,747, 2019
22019
Spin-current-induced dynamics in ferromagnetic nanopillars of lateral spin-valve structures
JB Laloë, T Yang, T Kimura, Y Otani
Journal of Applied Physics 105 (7), 2009
22009
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20