| Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition BJ Choi, DS Jeong, SK Kim, C Rohde, S Choi, JH Oh, HJ Kim, CS Hwang, ... Journal of applied physics 98 (3), 2005 | 1454 | 2005 |
| Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films KM Kim, BJ Choi, YC Shin, S Choi, CS Hwang Applied physics letters 91 (1), 2007 | 502 | 2007 |
| Identification of a determining parameter for resistive switching of TiO2 thin films C Rohde, BJ Choi, DS Jeong, S Choi, JS Zhao, CS Hwang Applied Physics Letters 86 (26), 2005 | 400 | 2005 |
| Resistive Switching in Pt∕ Al2O3∕ TiO2∕ Ru Stacked Structures KM Kim, BJ Choi, BW Koo, S Choi, DS Jeong, CS Hwang Electrochemical and solid-state letters 9 (12), G343, 2006 | 153 | 2006 |
| Study on the resistive switching time of TiO2 thin films BJ Choi, S Choi, KM Kim, YC Shin, CS Hwang, SY Hwang, S Cho, S Park, ... Applied physics letters 89 (1), 2006 | 153 | 2006 |
| Impact of the mechanical stress on switching characteristics of electrochemical resistive memory S Ambrogio, S Balatti, S Choi, D Ielmini Advanced Materials 26 (23), 3885-3892, 2014 | 112 | 2014 |
| Fully on-chip MAC at 14 nm enabled by accurate row-wise programming of PCM-based weights and parallel vector-transport in duration-format P Narayanan, S Ambrogio, A Okazaki, K Hosokawa, H Tsai, A Nomura, ... IEEE Transactions on Electron Devices 68 (12), 6629-6636, 2021 | 61 | 2021 |
| Parasitic resistance reduction strategies for advanced CMOS FinFETs beyond 7nm H Wu, O Gluschenkov, G Tsutsui, C Niu, K Brew, C Durfee, C Prindle, ... 2018 IEEE International Electron Devices Meeting (IEDM), 35.4. 1-35.4. 4, 2018 | 40 | 2018 |
| An analog-AI chip for energy-efficient speech recognition and transcription S Ambrogio, P Narayanan, A Okazaki, A Fasoli, C Mackin, K Hosokawa, ... Nature 620 (7975), 768-775, 2023 | 29 | 2023 |
| Resistance drift model for conductive-bridge (CB) RAM by filament surface relaxation S Choi, S Ambrogio, S Balatti, F Nardi, D Ielmini 2012 4th IEEE International Memory Workshop, 1-4, 2012 | 22 | 2012 |
| Size-dependent drift of resistance due to surface defect relaxation in conductive-bridge memory S Choi, S Balatti, F Nardi, D Ielmini IEEE electron device letters 33 (8), 1189-1191, 2012 | 21 | 2012 |
| Growth and Phase Separation Behavior in Ge-Doped Sb− Te Thin Films Deposited by Combined Plasma-Enhanced Chemical Vapor and Atomic Layer Depositions S Choi, BJ Choi, T Eom, JH Jang, W Lee, CS Hwang The Journal of Physical Chemistry C 114 (41), 17899-17904, 2010 | 17 | 2010 |
| Contact metallization for advanced CMOS technology nodes V Kamineni, A Carr, C Niu, P Adusumilli, T Abrams, R Xiel, S Fan, J Kelly, ... 2018 IEEE International Interconnect Technology Conference (IITC), 28-29, 2018 | 1 | 2018 |
| Nanosession: Electrochemical Metallization Memories T Hasegawa, Y Itoh, T Tsuruoka, M Aono, S Tappertzhofen, I Valov, ... Frontiers in Electronic Materials: A Collection of Extended Abstracts of the …, 2012 | | 2012 |
| Nanofilament relaxation model for size dependent resistance drift in electrochemical memories S Choi, S Balatti, F Nardi, D Ielmini Technical Digest of Frontiers in Electronic Materials, 216-217, 2012 | | 2012 |
