Catalyst design with atomic layer deposition BJ O’Neill, DHK Jackson, J Lee, C Canlas, PC Stair, CL Marshall, ...
Acs Catalysis 5 (3), 1804-1825, 2015
733 2015 Long-Range Order in TS Kuan, TF Kuech, WI Wang, EL Wilkie
Physical review letters 54 (3), 201, 1985
579 1985 Surface chemistry of prototypical bulk II− VI and III− V semiconductors and implications for chemical sensing F Seker, K Meeker, TF Kuech, AB Ellis
Chemical reviews 100 (7), 2505-2536, 2000
442 2000 Determination of the interdiffusion of Al and Ga in undoped (Al, Ga) As/GaAs quantum wells TE Schlesinger, T Kuech
Applied physics letters 49 (9), 519-521, 1986
325 1986 Mechanism of carbon incorporation in MOCVD GaAs TF Kuech, E Veuhoff
Journal of Crystal Growth 68 (1), 148-156, 1984
308 1984 Nonalloyed ohmic contacts to n ‐GaAs by solid‐phase epitaxy of Ge ED Marshall, B Zhang, LC Wang, PF Jiao, WX Chen, T Sawada, SS Lau, ...
Journal of applied physics 62 (3), 942-947, 1987
246 1987 Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP pin photodiodes transferred on silicon P Chen, WV Chen, PKL Yu, CW Tang, KM Lau, L Mawst, C Paulson, ...
Applied Physics Letters 94 (1), 2009
235 2009 Stabilization of copper catalysts for liquid‐phase reactions by atomic layer deposition BJ O'Neill, DHK Jackson, AJ Crisci, CA Farberow, F Shi, AC Alba‐Rubio, ...
Angewandte Chemie 125 (51), 14053-14057, 2013
234 2013 Pressure dependence of GaAs/Alx Ga1−x As quantum‐well bound states: The determination of valence‐band offsets DJ Wolford, TF Kuech, JA Bradley, MA Gell, D Ninno, M Jaros
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1986
231 1986 InP Layer Transfer with Masked Implantation W Chen, P Bandaru, CW Tang, KM Lau, TF Kuech, SS Lau
Electrochemical and Solid-State Letters 12 (4), H149, 2009
229 2009 Method of making a single crystals Ga* N article MA Tischler, TF Kuech
US Patent 5,679,152, 1997
224 1997 Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy TF Kuech, MA Tischler, PJ Wang, G Scilla, R Potemski, F Cardone
Applied physics letters 53 (14), 1317-1319, 1988
211 1988 High temperature adduct formation of trimethylgallium and ammonia A Thon, TF Kuech
Applied physics letters 69 (1), 55-57, 1996
205 1996 Properties of high‐purity Alx Ga1−x As grown by the metalorganic vapor‐phase‐epitaxy technique using methyl precursors TF Kuech, DJ Wolford, E Veuhoff, V Deline, PM Mooney, R Potemski, ...
Journal of applied physics 62 (2), 632-643, 1987
192 1987 surface treatments for metal contactsJ Sun, KA Rickert, JM Redwing, AB Ellis, FJ Himpsel, TF Kuech
Applied physics letters 76 (4), 415-417, 2000
179 2000 Dependence of the Alx Ga1−x As band edge on alloy composition based on the absolute measurement of x TF Kuech, DJ Wolford, R Potemski, JA Bradley, KH Kelleher, D Yan, ...
Applied physics letters 51 (7), 505-507, 1987
176 1987 Metal-organic vapor phase epitaxy of compound semiconductors TF Kuech
Materials science reports 2 (1), 1-49, 1987
176 1987 The influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1− xAs layers and heterostructures TF Kuech, E Veuhoff, TS Kuan, V Deline, R Potemski
journal of crystal growth 77 (1-3), 257-271, 1986
171 1986 Ionic conductivity of calcia, yttria, and rare earth‐doped cerium dioxide RT Dirstine, RN Blumenthal, TF Kuech
Journal of The Electrochemical Society 126 (2), 264, 1979
168 1979 Application of selective epitaxy to fabrication of nanometer scale wire and dot structures JA Lebens, CS Tsai, KJ Vahala, TF Kuech
Applied Physics Letters 56 (26), 2642-2644, 1990
164 1990