Seguir
Kurt Gaskill
Kurt Gaskill
Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD
No hay ninguna dirección de correo electrónico verificada.
Título
Citado por
Citado por
Año
Sensitive room-temperature terahertz detection via the photothermoelectric effect in graphene
X Cai, AB Sushkov, RJ Suess, MM Jadidi, GS Jenkins, LO Nyakiti, ...
Nature nanotechnology 9 (10), 814-819, 2014
6122014
Epitaxial-graphene RF field-effect transistors on Si-face 6H-SiC substrates
JS Moon, D Curtis, M Hu, D Wong, C McGuire, PM Campbell, G Jernigan, ...
IEEE Electron Device Letters 30 (6), 650-652, 2009
4902009
Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition
ER Glaser, TA Kennedy, K Doverspike, LB Rowland, DK Gaskill, ...
Physical Review B 51 (19), 13326, 1995
3881995
Microstructural characterization of α‐GaN films grown on sapphire by organometallic vapor phase epitaxy
W Qian, M Skowronski, M De Graef, K Doverspike, LB Rowland, ...
Applied physics letters 66 (10), 1252-1254, 1995
3821995
Formation of high Tc superconducting films by organometallic chemical vapor deposition
AD Berry, DK Gaskill, RT Holm, EJ Cukauskas, R Kaplan, RL Henry
Applied physics letters 52 (20), 1743-1745, 1988
3101988
Silicon carbide as a platform for power electronics
CR Eddy Jr, DK Gaskill
Science 324 (5933), 1398-1400, 2009
2952009
Open‐core screw dislocations in GaN epilayers observed by scanning force microscopy and high‐resolution transmission electron microscopy
W Qian, GS Rohrer, M Skowronski, K Doverspike, LB Rowland, ...
Applied physics letters 67 (16), 2284-2286, 1995
2861995
Technique for the dry transfer of epitaxial graphene onto arbitrary substrates
JD Caldwell, TJ Anderson, JC Culbertson, GG Jernigan, KD Hobart, ...
ACS nano 4 (2), 1108-1114, 2010
2802010
Microwave performance of GaN MESFETS
SC Binari, LB Rowland, W Kruppa, G Kelner, K Doverspike, DK Gaskill
Electronics letters 30 (15), 1248-1249, 1994
2581994
Hall effect mobility of epitaxial graphene grown on silicon carbide
JL Tedesco, BL VanMil, RL Myers-Ward, JM McCrate, SA Kitt, ...
Applied Physics Letters 95 (12), 2009
2502009
Quantum linear magnetoresistance in multilayer epitaxial graphene
AL Friedman, JL Tedesco, PM Campbell, JC Culbertson, E Aifer, ...
Nano letters 10 (10), 3962-3965, 2010
2412010
Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale
JA Robinson, M Wetherington, JL Tedesco, PM Campbell, X Weng, J Stitt, ...
Nano letters 9 (8), 2873-2876, 2009
2382009
Polarity governs atomic interaction through two-dimensional materials
W Kong, H Li, K Qiao, Y Kim, K Lee, Y Nie, D Lee, T Osadchy, RJ Molnar, ...
Nature materials 17 (11), 999-1004, 2018
2262018
Modulation spectroscopy as a tool for electronic material characterization
N Bottka, DK Gaskill, RS Sillmon, R Henry, R Glosser
Journal of electronic materials 17, 161-170, 1988
1891988
Top-gated epitaxial graphene FETs on Si-face SiC wafers with a peak transconductance of 600 mS/mm
JS Moon, D Curtis, S Bui, M Hu, DK Gaskill, JL Tedesco, P Asbeck, ...
IEEE Electron Device Letters 31 (4), 260-262, 2010
1882010
Comparison of epitaxial graphene on Si-face and C-face 4H SiC formed by ultrahigh vacuum and RF furnace production
GG Jernigan, BL VanMil, JL Tedesco, JG Tischler, ER Glaser, ...
Nano letters 9 (7), 2605-2609, 2009
1862009
Ultra-low resistance ohmic contacts in graphene field effect transistors
JS Moon, M Antcliffe, HC Seo, D Curtis, S Lin, A Schmitz, I Milosavljevic, ...
Applied Physics Letters 100 (20), 2012
1772012
Electrical characterisation of Ti Schottky barriers on n-type GaN
SC Binari, HB Dietrich, G Kelner, LB Rowland, K Doverspike, DK Gaskill
Electronics Letters 30 (11), 909-911, 1994
1731994
Tunable terahertz hybrid metal–graphene plasmons
MM Jadidi, AB Sushkov, RL Myers-Ward, AK Boyd, KM Daniels, ...
Nano letters 15 (10), 7099-7104, 2015
1672015
In situ, real-time diagnostics of OMVPE using IR-diode laser spectroscopy
JE Butler, N Bottka, RS Sillmon, DK Gaskill
Journal of Crystal Growth 77 (1-3), 163-171, 1986
1531986
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20