High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates H Xing, Y Dora, A Chini, S Heikman, S Keller, UK Mishra
IEEE Electron Device Letters 25 (4), 161-163, 2004
476 2004 Surface-related drain current dispersion effects in AlGaN-GaN HEMTs G Meneghesso, G Verzellesi, R Pierobon, F Rampazzo, A Chini, ...
IEEE Transactions on Electron Devices 51 (10), 1554-1561, 2004
409 2004 Deep-level characterization in GaN HEMTs-Part I: Advantages and limitations of drain current transient measurements D Bisi, M Meneghini, C De Santi, A Chini, M Dammann, P Brueckner, ...
IEEE Transactions on electron devices 60 (10), 3166-3175, 2013
397 2013 N-polar GaN∕ AlGaN∕ GaN high electron mobility transistors S Rajan, A Chini, MH Wong, JS Speck, UK Mishra
Journal of Applied Physics 102 (4), 2007
283 2007 GaN-based power devices: Physics, reliability, and perspectives M Meneghini, C De Santi, I Abid, M Buffolo, M Cioni, RA Khadar, L Nela, ...
Journal of Applied Physics 130 (18), 2021
270 2021 N-polar GaN epitaxy and high electron mobility transistors MH Wong, S Keller, SD Nidhi, DJ Denninghoff, S Kolluri, DF Brown, J Lu, ...
Semiconductor Science and Technology 28 (7), 074009, 2013
236 2013 12W/mm power density AlGaN/GaN HEMTs on sapphire substrate A Chini, D Buttari, R Coffie, S Heikman, S Keller, UK Mishra
Electronics Letters 40 (1), 1, 2004
193 2004 Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements M Meneghini, I Rossetto, D Bisi, A Stocco, A Chini, A Pantellini, C Lanzieri, ...
IEEE Transactions on Electron Devices 61 (12), 4070-4077, 2014
176 2014 AlGaN/GaN-based HEMTs failure physics and reliability: Mechanisms affecting gate edge and Schottky junction E Zanoni, M Meneghini, A Chini, D Marcon, G Meneghesso
IEEE Transactions on Electron Devices 60 (10), 3119-3131, 2013
168 2013 Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias M Meneghini, A Stocco, M Bertin, D Marcon, A Chini, G Meneghesso, ...
Applied Physics Letters 100 (3), 2012
153 2012 High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation L Shen, R Coffie, D Buttari, S Heikman, A Chakraborty, A Chini, S Keller, ...
IEEE Electron Device Letters 25 (1), 7-9, 2004
140 2004 Mechanisms of RF current collapse in AlGaN–GaN high electron mobility transistors M Faqir, G Verzellesi, A Chini, F Fantini, F Danesin, G Meneghesso, ...
IEEE Transactions on Device and Materials Reliability 8 (2), 240-247, 2008
135 2008 Reliability issues of gallium nitride high electron mobility transistors G Meneghesso, M Meneghini, A Tazzoli, A Stocco, A Chini, E Zanoni
International Journal of Microwave and Wireless Technologies 2 (1), 39-50, 2010
133 2010 Origin of etch delay time in D Buttari, A Chini, T Palacios, R Coffie, L Shen, H Xing, S Heikman, ...
Applied physics letters 83 (23), 4779-4781, 2003
129 2003 Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs A Chini, D Buttari, R Coffie, L Shen, S Heikman, A Chakraborty, S Keller, ...
IEEE Electron Device Letters 25 (5), 229-231, 2004
126 2004 Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs T Palacios, A Chini, D Buttari, S Heikman, A Chakraborty, S Keller, ...
IEEE transactions on electron devices 53 (3), 562-565, 2006
119 2006 Fabrication of single or multiple gate field plates A Chini, UK Mishra, P Parikh, Y Wu
US Patent 7,812,369, 2010
99 2010 A C-band high-dynamic range GaN HEMT low-noise amplifier H Xu, C Sanabria, A Chini, S Keller, UK Mishra, RA York
IEEE Microwave and Wireless Components Letters 14 (6), 262-264, 2004
98 2004 Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs D Buttari, A Chini, G Meneghesso, E Zanoni, B Moran, S Heikman, ...
IEEE Electron device letters 23 (2), 76-78, 2002
89 2002 Experimental and numerical analysis of hole emission process from carbon-related traps in GaN buffer layers A Chini, G Meneghesso, M Meneghini, F Fantini, G Verzellesi, A Patti, ...
IEEE Transactions on Electron Devices 63 (9), 3473-3478, 2016
88 2016 