Alessandro Chini
Alessandro Chini
Professor of Electronics, University of Modena and Reggio Emilia, Italy
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High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates
H Xing, Y Dora, A Chini, S Heikman, S Keller, UK Mishra
IEEE Electron Device Letters 25 (4), 161-163, 2004
Deep-level characterization in GaN HEMTs-Part I: Advantages and limitations of drain current transient measurements
D Bisi, M Meneghini, C De Santi, A Chini, M Dammann, P Brueckner, ...
IEEE Transactions on electron devices 60 (10), 3166-3175, 2013
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs
G Meneghesso, G Verzellesi, R Pierobon, F Rampazzo, A Chini, ...
IEEE Transactions on Electron Devices 51 (10), 1554-1561, 2004
GaN-based power devices: Physics, reliability, and perspectives
M Meneghini, C De Santi, I Abid, M Buffolo, M Cioni, RA Khadar, L Nela, ...
Journal of Applied Physics 130 (18), 2021
N-polar GaN∕ AlGaN∕ GaN high electron mobility transistors
S Rajan, A Chini, MH Wong, JS Speck, UK Mishra
Journal of Applied Physics 102 (4), 2007
N-polar GaN epitaxy and high electron mobility transistors
MH Wong, S Keller, SD Nidhi, DJ Denninghoff, S Kolluri, DF Brown, J Lu, ...
Semiconductor Science and Technology 28 (7), 074009, 2013
12W/mm power density AlGaN/GaN HEMTs on sapphire substrate
A Chini, D Buttari, R Coffie, S Heikman, S Keller, UK Mishra
Electronics Letters 40 (1), 1, 2004
Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements
M Meneghini, I Rossetto, D Bisi, A Stocco, A Chini, A Pantellini, C Lanzieri, ...
IEEE Transactions on Electron Devices 61 (12), 4070-4077, 2014
AlGaN/GaN-based HEMTs failure physics and reliability: Mechanisms affecting gate edge and Schottky junction
E Zanoni, M Meneghini, A Chini, D Marcon, G Meneghesso
IEEE Transactions on Electron Devices 60 (10), 3119-3131, 2013
Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias
M Meneghini, A Stocco, M Bertin, D Marcon, A Chini, G Meneghesso, ...
Applied Physics Letters 100 (3), 2012
High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation
L Shen, R Coffie, D Buttari, S Heikman, A Chakraborty, A Chini, S Keller, ...
IEEE Electron Device Letters 25 (1), 7-9, 2004
Reliability issues of gallium nitride high electron mobility transistors
G Meneghesso, M Meneghini, A Tazzoli, A Stocco, A Chini, E Zanoni
International Journal of Microwave and Wireless Technologies 2 (1), 39-50, 2010
Mechanisms of RF current collapse in AlGaN–GaN high electron mobility transistors
M Faqir, G Verzellesi, A Chini, F Fantini, F Danesin, G Meneghesso, ...
IEEE Transactions on Device and Materials Reliability 8 (2), 240-247, 2008
Origin of etch delay time in dry etching of AlGaN/GaN structures
D Buttari, A Chini, T Palacios, R Coffie, L Shen, H Xing, S Heikman, ...
Applied physics letters 83 (23), 4779-4781, 2003
Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs
A Chini, D Buttari, R Coffie, L Shen, S Heikman, A Chakraborty, S Keller, ...
IEEE Electron Device Letters 25 (5), 229-231, 2004
Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs
T Palacios, A Chini, D Buttari, S Heikman, A Chakraborty, S Keller, ...
IEEE transactions on electron devices 53 (3), 562-565, 2006
Fabrication of single or multiple gate field plates
A Chini, UK Mishra, P Parikh, Y Wu
US Patent 7,812,369, 2010
A C-band high-dynamic range GaN HEMT low-noise amplifier
H Xu, C Sanabria, A Chini, S Keller, UK Mishra, RA York
IEEE Microwave and Wireless Components Letters 14 (6), 262-264, 2004
Experimental and numerical analysis of hole emission process from carbon-related traps in GaN buffer layers
A Chini, G Meneghesso, M Meneghini, F Fantini, G Verzellesi, A Patti, ...
IEEE Transactions on Electron Devices 63 (9), 3473-3478, 2016
Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs
D Buttari, A Chini, G Meneghesso, E Zanoni, B Moran, S Heikman, ...
IEEE Electron device letters 23 (2), 76-78, 2002
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