| Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ... Advanced Electronic Materials 4 (1), 1600501, 2018 | 1145 | 2018 |
| Diamond on III-nitride device FJ Kub, TJ Anderson, VD Wheeler, AD Koehler, KD Hobart US Patent 10,002,958, 2018 | 340 | 2018 |
| Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga2O3 MJ Tadjer, JL Lyons, N Nepal, JA Freitas, AD Koehler, GM Foster ECS Journal of Solid State Science and Technology 8 (7), Q3187-Q3194, 2019 | 197 | 2019 |
| Vertical GaN junction barrier Schottky rectifiers by selective ion implantation Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ... IEEE Electron Device Letters 38 (8), 1097-1100, 2017 | 162 | 2017 |
| A (001) β-Ga2O3 MOSFET with+ 2.9 V threshold voltage and HfO2 gate dielectric MJ Tadjer, NA Mahadik, VD Wheeler, ER Glaser, L Ruppalt, AD Koehler, ... ECS Journal of Solid State Science and Technology 5 (9), P468, 2016 | 151 | 2016 |
| Substrate-dependent effects on the response of AlGaN/GaN HEMTs to 2-MeV proton irradiation TJ Anderson, AD Koehler, JD Greenlee, BD Weaver, MA Mastro, JK Hite, ... IEEE Electron Device Letters 35 (8), 826-828, 2014 | 92 | 2014 |
| III-nitride P-channel field effect transistor with hole carriers in the channel FJ Kub, TJ Anderson, AD Koehler, KD Hobart US Patent 9,006,791, 2015 | 87 | 2015 |
| On the radiation tolerance of AlGaN/GaN HEMTs BD Weaver, TJ Anderson, AD Koehler, JD Greenlee, JK Hite, DI Shahin, ... ECS Journal of Solid State Science and Technology 5 (7), Q208, 2016 | 86 | 2016 |
| GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging MJ Tadjer, TJ Anderson, MG Ancona, PE Raad, P Komarov, T Bai, ... IEEE Electron Device Letters 40 (6), 881-884, 2019 | 71 | 2019 |
| Effect of reduced extended defect density in MOCVD grown AlGaN/GaN HEMTs on native GaN substrates TJ Anderson, MJ Tadjer, JK Hite, JD Greenlee, AD Koehler, KD Hobart, ... IEEE Electron Device Letters 37 (1), 28-30, 2015 | 66 | 2015 |
| Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation AD Koehler, N Nepal, TJ Anderson, MJ Tadjer, KD Hobart, CR Eddy, ... Electron Device Letters, IEEE 34 (9), 1115-1117, 2013 | 66 | 2013 |
| Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition VD Wheeler, N Nepal, DR Boris, SB Qadri, LO Nyakiti, A Lang, A Koehler, ... Chemistry of Materials 32 (3), 1140-1152, 2020 | 63 | 2020 |
| Electrical characterization of ALD HfO2 high-k dielectrics on (2¯ 01) β-Ga2O3 DI Shahin, MJ Tadjer, VD Wheeler, AD Koehler, TJ Anderson, CR Eddy, ... Applied Physics Letters 112 (4), 2018 | 58 | 2018 |
| Nanocrystalline diamond integration with III-nitride HEMTs TJ Anderson, KD Hobart, MJ Tadjer, AD Koehler, EA Imhoff, JK Hite, ... ECS Journal of Solid State Science and Technology 6 (2), Q3036, 2016 | 55 | 2016 |
| Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs JD Greenlee, P Specht, TJ Anderson, AD Koehler, BD Weaver, ... Applied physics letters 107 (8), 2015 | 47 | 2015 |
| Vertical GaN junction barrier Schottky diodes AD Koehler, TJ Anderson, MJ Tadjer, A Nath, BN Feigelson, DI Shahin, ... ECS Journal of Solid State Science and Technology 6 (1), Q10, 2016 | 42 | 2016 |
| Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO2 gate dielectric deposited by atomic layer deposition TJ Anderson, VD Wheeler, DI Shahin, MJ Tadjer, AD Koehler, KD Hobart, ... Applied Physics Express 9 (7), 071003, 2016 | 42 | 2016 |
| Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process A Nath, AD Koehler, GG Jernigan, VD Wheeler, JK Hite, SC Hernández, ... Applied Physics Letters 104 (22), 2014 | 41 | 2014 |
| Proton radiation-induced void formation in Ni/Au-gated AlGaN/GaN HEMTs AD Koehler, P Specht, TJ Anderson, BD Weaver, JD Greenlee, MJ Tadjer, ... IEEE Electron Device Letters 35 (12), 1194-1196, 2014 | 39 | 2014 |
| Large-signal RF performance of nanocrystalline diamond coated AlGaN/GaN high electron mobility transistors DJ Meyer, TI Feygelson, TJ Anderson, JA Roussos, MJ Tadjer, ... IEEE Electron Device Letters 35 (10), 1013-1015, 2014 | 39 | 2014 |
Travis J. AndersonNaval Research LaboratoryDirección de correo verificada de nrl.navy.mil
