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Sasi Sekaran Sundaresan
Sasi Sekaran Sundaresan
Hardware Engineer, Google Cloud
Verified email at google.com
Title
Cited by
Cited by
Year
Effects of spontaneous and piezoelectric polarization fields on the electronic and optical properties in GaN/AlN quantum dots: multimillion‐atom sp3d5s* tight …
SS Sundaresan, VM Gaddipati, SS Ahmed
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2015
212015
Quantum atomistic simulations of nanoelectronic devices using QuADS
S Ahmed, K Yalavarthi, V Gaddipati, A Muntahi, S Sundaresan, ...
Nano-Electronic Devices: Semiclassical and Quantum Transport Modeling, 405-441, 2011
202011
Multimillion-atom modeling of InAs/GaAs quantum dots: interplay of geometry, quantization, atomicity, strain, and linear and quadratic polarization fields
S Ahmed, S Sundaresan, H Ryu, M Usman
Journal of Computational Electronics 14, 543-556, 2015
102015
Multiscale modeling of wurtzite InN/GaN quantum Dot LEDs
K Yalavarthi, S Sundaresan, S Ahmed
2011 11th IEEE International Conference on Nanotechnology, 881-886, 2011
52011
Geometry dependence of the internal fields and its impact on the electronic structure in self-assembled InAs/GaAs quantum dots
S Islam, S Sundaresan, S Ahmed
Submitted to IEEE Trans on NanoTechnology, 2009
42009
Built-in electric fields in InAs/GaAs quantum dots: geometry dependence and effects on the electronic structure
S Sundaresan, S Islam, S Ahmed
2010 IEEE Nanotechnology Materials and Devices Conference, 30-35, 2010
32010
Modeling InGaN Disk-in-Wire LEDs: Interplay of Quantum Atomicity and Structural Fields
K Yalavarthi, V Chimalgi, S Sundaresan, S Ahmed
Technical proceedings of SISPAD 2012, 221-224, 2012
22012
Influence of Internal Fields on the Electronic Structure in Self-Assembled InAs/GaAs Quantum Dots
S Islam, S Sundaresan, S Ahmed
arXiv preprint arXiv:1005.4110, 2010
12010
Effects of internal fields in quantum dots
SS Sundaresan
Southern Illinois University at Carbondale, 2010
12010
VFF-Monte Carlo framework for phonon transport in nanostructures
MZ Rashid, S Sundaresan, T Jayasekera, S Ahmed
2015 International Workshop on Computational Electronics (IWCE), 1-2, 2015
2015
Full-Band Particle-Based Monte-Carlo Simulation with Anharmonic Corrections for Phonon Transport in III-N Nanostructures
S Sundaresan, T Jayasekera, S Ahmed
APS March Meeting Abstracts 2014, C1. 153, 2014
2014
Atomistic modeling of phonon bandstructure and transport for optimal thermal management in nanoscale devices
SS Sundaresan
Southern Illinois University at Carbondale, 2014
2014
Effects of atomicity and internal polarization on the electronic and optical properties of GaN/AlN quantum dots: Multimillion-atom coupled VFF MM-sp3 d5 s tight …
S Sundaresan, K Yalavarthi, S Ahmed
2012 15th International Workshop on Computational Electronics, 1-4, 2012
2012
Engineering Efficiency Droop in InGaN/GaN Multiple Quantum Well LEDs
Y Puttaswamy, S Sundaresan, K Yalavarthi, S Ahmed
APS March Meeting Abstracts 2012, S1. 099, 2012
2012
Atomistic Modeling of Degradation Mechanisms in Nanoscale HEMT Devices
V Gaddipati, S Sundaresan, K Yalavarthi, S Ahmed
APS March Meeting Abstracts 2012, S1. 157, 2012
2012
Effects of Internal Fields on the Optical Emission in Nanostructured III-N LEDs
K Yalavarthi, S Sundaresan, K Merrill, S Ahmed
APS March Meeting Abstracts 2012, L28. 010, 2012
2012
Geometry and Size Dependence of the Internal Fields: Multimillion Atom Tight-Binding Simulations of the Electronic Structure of Self-Assembled InAs/GaAs Quantum Dots
S Ahmed, S Islam, S Sundaresan
APS March Meeting Abstracts 2010, H9. 012, 2010
2010
Effects of Internal Fields in Self-Assembled InN/GaN Quantum Dots: Multimillion-Atom Tight-Binding Simulations
S Sundaresan, M Usman, S Ahmed
VFF-Monte Carlo Framework for Phonon Transport in Nanostructures
S Sundaresan, M Rashid, T Jayasekera, S Ahmed
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