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Ronny Kirste
Ronny Kirste
Research associate, NCSU
Dirección de correo verificada de ncsu.edu
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Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers
MR Wagner, G Callsen, JS Reparaz, JH Schulze, R Kirste, M Cobet, ...
Physical Review B 84 (3), 035313, 2011
1942011
On the origin of the 265 nm absorption band in AlN bulk crystals
R Collazo, J Xie, BE Gaddy, Z Bryan, R Kirste, M Hoffmann, R Dalmau, ...
Applied Physics Letters 100 (19), 191914, 2012
1542012
The 2020 UV emitter roadmap
H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ...
Journal of Physics D: Applied Physics 53 (50), 503001, 2020
1472020
Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures
J Xie, S Mita, Z Bryan, W Guo, L Hussey, B Moody, R Schlesser, R Kirste, ...
Applied Physics Letters 102 (17), 171102, 2013
1292013
Polarity control in group-III nitrides beyond pragmatism
S Mohn, N Stolyarchuk, T Markurt, R Kirste, MP Hoffmann, R Collazo, ...
Physical Review Applied 5 (5), 054004, 2016
952016
Lithium related deep and shallow acceptors in Li-doped ZnO nanocrystals
C Rauch, W Gehlhoff, MR Wagner, E Malguth, G Callsen, R Kirste, ...
Journal of Applied Physics 107 (2), 024311, 2010
902010
Vacancy compensation and related donor-acceptor pair recombination in bulk AlN
BE Gaddy, Z Bryan, I Bryan, R Kirste, J Xie, R Dalmau, B Moody, ...
Applied Physics Letters 103 (16), 161901, 2013
872013
The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN
BE Gaddy, Z Bryan, I Bryan, J Xie, R Dalmau, B Moody, Y Kumagai, ...
Applied Physics Letters 104 (20), 202106, 2014
732014
Polarity control and growth of lateral polarity structures in AlN
R Kirste, S Mita, L Hussey, MP Hoffmann, W Guo, I Bryan, Z Bryan, ...
Applied Physics Letters 102 (18), 181913, 2013
732013
Optical signature of Mg-doped GaN: Transfer processes
G Callsen, MR Wagner, T Kure, JS Reparaz, M Bügler, J Brunnmeier, ...
Physical Review B 86 (7), 075207, 2012
722012
Electronic biosensors based on III-nitride semiconductors
R Kirste, N Rohrbaugh, I Bryan, Z Bryan, R Collazo, A Ivanisevic
Annual Review of Analytical Chemistry 8, 149-169, 2015
702015
KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode
W Guo, R Kirste, I Bryan, Z Bryan, L Hussey, P Reddy, J Tweedie, ...
Applied Physics Letters 106 (8), 082110, 2015
702015
Influence of substrate surface polarity on homoepitaxial growth of ZnO layers by chemical vapor deposition
MR Wagner, TP Bartel, R Kirste, A Hoffmann, J Sann, S Lautenschläger, ...
Physical Review B 79 (3), 035307, 2009
682009
Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition
F Kaess, S Mita, J Xie, P Reddy, A Klump, LH Hernandez-Balderrama, ...
Journal of Applied Physics 120 (10), 105701, 2016
672016
Atomically Thin MoS2 Narrowband and Broadband Light Superabsorbers
L Huang, G Li, A Gurarslan, Y Yu, R Kirste, W Guo, J Zhao, R Collazo, ...
ACS nano 10 (8), 7493-7499, 2016
662016
Phonon deformation potentials in wurtzite GaN and ZnO determined by uniaxial pressure dependent Raman measurements
G Callsen, JS Reparaz, MR Wagner, R Kirste, C Nenstiel, A Hoffmann, ...
Applied Physics Letters 98 (6), 061906, 2011
642011
Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates
W Guo, Z Bryan, J Xie, R Kirste, S Mita, I Bryan, L Hussey, M Bobea, ...
Journal of Applied Physics 115 (10), 103108, 2014
602014
Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN
R Kirste, R Collazo, G Callsen, MR Wagner, T Kure, J Sebastian Reparaz, ...
Journal of Applied Physics 110 (9), 093503, 2011
572011
Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN
Z Bryan, I Bryan, BE Gaddy, P Reddy, L Hussey, M Bobea, W Guo, ...
Applied Physics Letters 105 (22), 222101, 2014
562014
Γ 7 valence band symmetry related hole fine splitting of bound excitons in ZnO observed in magneto-optical studies
MR Wagner, JH Schulze, R Kirste, M Cobet, A Hoffmann, C Rauch, ...
Physical Review B 80 (20), 205203, 2009
562009
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
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