Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers MR Wagner, G Callsen, JS Reparaz, JH Schulze, R Kirste, M Cobet, ... Physical Review B 84 (3), 035313, 2011 | 194 | 2011 |
On the origin of the 265 nm absorption band in AlN bulk crystals R Collazo, J Xie, BE Gaddy, Z Bryan, R Kirste, M Hoffmann, R Dalmau, ... Applied Physics Letters 100 (19), 191914, 2012 | 154 | 2012 |
The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020 | 147 | 2020 |
Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures J Xie, S Mita, Z Bryan, W Guo, L Hussey, B Moody, R Schlesser, R Kirste, ... Applied Physics Letters 102 (17), 171102, 2013 | 129 | 2013 |
Polarity control in group-III nitrides beyond pragmatism S Mohn, N Stolyarchuk, T Markurt, R Kirste, MP Hoffmann, R Collazo, ... Physical Review Applied 5 (5), 054004, 2016 | 95 | 2016 |
Lithium related deep and shallow acceptors in Li-doped ZnO nanocrystals C Rauch, W Gehlhoff, MR Wagner, E Malguth, G Callsen, R Kirste, ... Journal of Applied Physics 107 (2), 024311, 2010 | 90 | 2010 |
Vacancy compensation and related donor-acceptor pair recombination in bulk AlN BE Gaddy, Z Bryan, I Bryan, R Kirste, J Xie, R Dalmau, B Moody, ... Applied Physics Letters 103 (16), 161901, 2013 | 87 | 2013 |
The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN BE Gaddy, Z Bryan, I Bryan, J Xie, R Dalmau, B Moody, Y Kumagai, ... Applied Physics Letters 104 (20), 202106, 2014 | 73 | 2014 |
Polarity control and growth of lateral polarity structures in AlN R Kirste, S Mita, L Hussey, MP Hoffmann, W Guo, I Bryan, Z Bryan, ... Applied Physics Letters 102 (18), 181913, 2013 | 73 | 2013 |
Optical signature of Mg-doped GaN: Transfer processes G Callsen, MR Wagner, T Kure, JS Reparaz, M Bügler, J Brunnmeier, ... Physical Review B 86 (7), 075207, 2012 | 72 | 2012 |
Electronic biosensors based on III-nitride semiconductors R Kirste, N Rohrbaugh, I Bryan, Z Bryan, R Collazo, A Ivanisevic Annual Review of Analytical Chemistry 8, 149-169, 2015 | 70 | 2015 |
KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode W Guo, R Kirste, I Bryan, Z Bryan, L Hussey, P Reddy, J Tweedie, ... Applied Physics Letters 106 (8), 082110, 2015 | 70 | 2015 |
Influence of substrate surface polarity on homoepitaxial growth of ZnO layers by chemical vapor deposition MR Wagner, TP Bartel, R Kirste, A Hoffmann, J Sann, S Lautenschläger, ... Physical Review B 79 (3), 035307, 2009 | 68 | 2009 |
Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition F Kaess, S Mita, J Xie, P Reddy, A Klump, LH Hernandez-Balderrama, ... Journal of Applied Physics 120 (10), 105701, 2016 | 67 | 2016 |
Atomically Thin MoS2 Narrowband and Broadband Light Superabsorbers L Huang, G Li, A Gurarslan, Y Yu, R Kirste, W Guo, J Zhao, R Collazo, ... ACS nano 10 (8), 7493-7499, 2016 | 66 | 2016 |
Phonon deformation potentials in wurtzite GaN and ZnO determined by uniaxial pressure dependent Raman measurements G Callsen, JS Reparaz, MR Wagner, R Kirste, C Nenstiel, A Hoffmann, ... Applied Physics Letters 98 (6), 061906, 2011 | 64 | 2011 |
Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates W Guo, Z Bryan, J Xie, R Kirste, S Mita, I Bryan, L Hussey, M Bobea, ... Journal of Applied Physics 115 (10), 103108, 2014 | 60 | 2014 |
Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN R Kirste, R Collazo, G Callsen, MR Wagner, T Kure, J Sebastian Reparaz, ... Journal of Applied Physics 110 (9), 093503, 2011 | 57 | 2011 |
Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN Z Bryan, I Bryan, BE Gaddy, P Reddy, L Hussey, M Bobea, W Guo, ... Applied Physics Letters 105 (22), 222101, 2014 | 56 | 2014 |
Γ 7 valence band symmetry related hole fine splitting of bound excitons in ZnO observed in magneto-optical studies MR Wagner, JH Schulze, R Kirste, M Cobet, A Hoffmann, C Rauch, ... Physical Review B 80 (20), 205203, 2009 | 56 | 2009 |