Novel defected ground structure and two-side loading scheme for miniaturized dual-band SIW bandpass filter designs S Xu, K Ma, F Meng, KS Yeo
IEEE microwave and wireless components letters 25 (4), 217-219, 2015
127 2015 Pole-Converging Intrastage Bandwidth Extension Technique for Wideband Amplifiers G Feng, CC Boon, F Meng, X Yi, K Yang, C Li, HC Luong
IEEE Journal of Solid-State Circuits 52 (3), 769 - 780, 2017
85 2017 A 57-to-64-GHz 0.094-mm² 5-bit Passive Phase Shifter in 65-nm CMOS F Meng, K Ma, KS Yeo, S Xu
Very Large Scale Integration (VLSI) Systems, IEEE, 2015
82 2015 An 88.5–110 GHz CMOS Low-Noise Amplifier for Millimeter-Wave Imaging Applications G Feng, CC Boon, F Meng, X Yi, C Li
Microwave and Wireless Components Letters, IEEE, 2016
81 2016 Design of a 60-GHz Quasi-Yagi antenna with novel ladder-like directors for gain and bandwidth enhancements L Lu, K Ma, F Meng, KS Yeo
IEEE Antennas and Wireless Propagation Letters 15, 682-685, 2015
61 2015 A seven-octave broadband LNA MMIC using bandwidth extension techniques and improved active load J Hu, K Ma, S Mou, F Meng
IEEE Transactions on Circuits and Systems I: Regular Papers 65 (10), 3150-3161, 2018
60 2018 Ultra-wideband low-loss switch design in high-resistivity trap-rich SOI with enhanced channel mobility B Yu, K Ma, F Meng, KS Yeo, P Shyam, S Zhang, PR Verma
IEEE Transactions on Microwave Theory and Techniques 65 (10), 3937-3949, 2017
57 2017 Miniaturized 3-bit phase shifter for 60 GHz phased-array in 65 nm CMOS technology F Meng, K Ma, KS Yeo, S Xu, CC Boon, WM Lim
IEEE Microwave and Wireless Components Letters 24 (1), 50-52, 2013
51 2013 Quasi-lumped-element filter based on substrate-integrated suspended line technology Z Ma, K Ma, S Mou, F Meng
IEEE Transactions on Microwave Theory and Techniques 65 (12), 5154-5161, 2017
46 2017 A Low-Power Low-Phase-Noise VCO With Self-Adjusted Active Resistor J Sun, CC Boon, X Zhu, X Yi, K Devrishi, F Meng
Microwave and Wireless Components Letters, IEEE, 2016
42 2016 2.3 A 130-to-180GHz 0.0035mm2 SPDT switch with 3.3dB loss and 23.7dB isolation in 65nm bulk CMOS F Meng, K Ma, KS Yeo
2015 IEEE International Solid-State Circuits Conference-(ISSCC) Digest of …, 2015
41 2015 A 130-to-180GHz 0.0035 mm 2 SPDT switch with 3.3 dB loss and 23.7 dB isolation in 65nm bulk CMOS F Meng, K Ma, KS Yeo
Solid-State Circuits Conference-(ISSCC), 2015 IEEE International, 1-3, 2015
41 2015 Analysis and design of a 0.1–23 GHz LNA MMIC using frequency-dependent feedback J Hu, K Ma, S Mou, F Meng
IEEE Transactions on Circuits and Systems II: Express Briefs 66 (9), 1517-1521, 2019
35 2019 A compact 57–67 GHz bidirectional LNAPA in 65-nm CMOS technology F Meng, K Ma, KS Yeo, CC Boon, X Yi, J Sun, G Feng, S Xu
IEEE Microwave and Wireless Components Letters 26 (8), 628-630, 2016
32 2016 Monolithic sub-terahertz SPDT switches with low insertion loss and enhanced isolation F Meng, K Ma, KS Yeo, S Xu
IEEE Transactions on Terahertz Science and Technology 8 (2), 192-200, 2018
30 2018 A 220–285 GHz SPDT Switch in 65-nm CMOS Using Switchable Resonator Concept F Meng, K Ma, KS Yeo, CC Boon, WM Lim, S Xu
Terahertz Science and Technology, IEEE 5 (4), 649-651, 2015
30 2015 A 93.4–104.8-GHz 57-mW Fractional- Cascaded PLL With True In-Phase Injection-Coupled QVCO in 65-nm CMOS Technology X Yi, Z Liang, G Feng, F Meng, C Wang, C Li, K Yang, B Liu, CC Boon
IEEE Transactions on Microwave Theory and Techniques 67 (6), 2370-2381, 2019
29 2019 A 0.7/1.1-dB ultra-low noise dual-band LNA based on SISL platform Z Ke, S Mou, K Ma, F Meng
IEEE Transactions on Microwave Theory and Techniques 66 (10), 4576-4584, 2018
24 2018 DC-30 GHz DPDT switch matrix design in high resistivity trap-rich SOI B Yu, K Ma, F Meng, KS Yeo, P Shyam, S Zhang, PR Verma
IEEE transactions on electron devices 64 (9), 3548-3554, 2017
23 2017 A 65nm CMOS carrier-aggregation transceiver for IEEE 802.11 WLAN applications X Yi, K Yang, Z Liang, B Liu, K Devrishi, CC Boon, C Li, G Feng, D Regev, ...
2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 67-70, 2016
20 2016