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Ran Yu
Ran Yu
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Year
Junctionless nanowire transistor (JNT): Properties and design guidelines
JP Colinge, A Kranti, R Yan, CW Lee, I Ferain, R Yu, ND Akhavan, ...
Solid-State Electronics 65, 33-37, 2011
6732011
Reduced electric field in junctionless transistors
JP Colinge, CW Lee, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ...
Applied Physics Letters 96 (7), 2010
3722010
Junctionless multiple-gate transistors for analog applications
RT Doria, MA Pavanello, RD Trevisoli, M de Souza, CW Lee, I Ferain, ...
IEEE Transactions on Electron Devices 58 (8), 2511-2519, 2011
2772011
Low subthreshold slope in junctionless multigate transistors
CW Lee, AN Nazarov, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ...
Applied Physics Letters 96 (10), 2010
2752010
Junctionless transistors: physics and properties
JP Colinge, CW Lee, N Dehdashti Akhavan, R Yan, I Ferain, P Razavi, ...
Semiconductor-on-insulator materials for nanoelectronics applications, 187-200, 2011
1412011
Gold complexes with thiosemicarbazones: reactions of bi-and tridentate thiosemicarbazones with dichloro [2-(dimethylaminomethyl) phenyl-C 1, N] gold (III),[Au (damp-C 1, N) Cl 2]
U Abram, K Ortner, R Gust, K Sommer
Journal of the Chemical Society, Dalton Transactions, 735-744, 2000
103*2000
Mobility improvement in nanowire junctionless transistors by uniaxial strain
JP Raskin, JP Colinge, I Ferain, A Kranti, CW Lee, ND Akhavan, R Yan, ...
Applied Physics Letters 97 (4), 2010
582010
Junctionless 6T SRAM cell
A Kranti, CW Lee, I Ferain, R Yan, N Akhavan, P Razavi, R Yu, ...
Electronics letters 46 (22), 1491-1493, 2010
572010
Optimized laser thermal annealing on germanium for high dopant activation and low leakage current
M Shayesteh, D O’Connell, F Gity, P Murphy-Armando, R Yu, K Huet, ...
IEEE Transactions on Electron Devices 61 (12), 4047-4055, 2014
532014
Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors
T Rudenko, A Nazarov, I Ferain, S Das, R Yu, S Barraud, P Razavi
Applied Physics Letters 101 (21), 2012
532012
Improvement of carrier ballisticity in junctionless nanowire transistors
N Dehdashti Akhavan, I Ferain, P Razavi, R Yu, JP Colinge
Applied Physics Letters 98 (10), 2011
532011
Junctionless nanowire transistor: complementary metal-oxide-semiconductor without junctions
JP Colinge, I Ferain, A Kranti, CW Lee, ND Akhavan, P Razavi, R Yan, ...
Science of Advanced Materials 3 (3), 477-482, 2011
522011
Random telegraph-signal noise in junctionless transistors
AN Nazarov, I Ferain, ND Akhavan, P Razavi, R Yu, JP Colinge
Applied Physics Letters 98 (9), 2011
462011
Bipolar effects in unipolar junctionless transistors
MS Parihar, D Ghosh, GA Armstrong, R Yu, P Razavi, A Kranti
Applied Physics Letters 101 (9), 2012
452012
Short-channel junctionless nanowire transistors
CW Lee, I Ferain, A Kranti, ND Akhavan, P Razavi, R Yan, R Yu, B O’Neill, ...
Proc. SSDM, 1044-1045, 2010
452010
A simulation comparison between junctionless and inversion-mode MuGFETs
JP Colinge, A Kranti, R Yan, I Ferain, ND Akhavan, P Razavi, CW Lee, ...
ECS Transactions 35 (5), 63, 2011
442011
Investigation of high-performance sub-50 nm junctionless nanowire transistors
R Yan, A Kranti, I Ferain, CW Lee, R Yu, N Dehdashti, P Razavi, ...
Microelectronics Reliability 51 (7), 1166-1171, 2011
402011
Electron mobility in heavily doped junctionless nanowire SOI MOSFETs
T Rudenko, A Nazarov, R Yu, S Barraud, K Cherkaoui, P Razavi, G Fagas
Microelectronic Engineering 109, 326-329, 2013
392013
Introducing critical management studies: key dimensions
L Taskin, H Willmott
Gestion 25 (6), 27-38, 2000
392000
Device design and estimated performance for p-type junctionless transistors on bulk germanium substrates
R Yu, S Das, I Ferain, P Razavi, M Shayesteh, A Kranti, R Duffy, ...
IEEE transactions on electron devices 59 (9), 2308-2313, 2012
362012
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