Gerard Ghibaudo
Gerard Ghibaudo
IMEP-LAHC, Minatec-INP Grenoble
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A new method for the extraction of MOSFET parameters
G Ghibaudo
Electronics letters 24, 543-544, 1988
7861988
Improved analysis of low frequency noise in field‐effect MOS transistors
G Ghibaudo, O Roux, C Nguyen‐Duc, F Balestra, J Brini
physica status solidi (a) 124 (2), 571-581, 1991
6621991
Review on high-k dielectrics reliability issues
G Ribes, J Mitard, M Denais, S Bruyere, F Monsieur, C Parthasarathy, ...
IEEE Transactions on Device and materials Reliability 5 (1), 5-19, 2005
5712005
Electrical noise and RTS fluctuations in advanced CMOS devices
G Ghibaudo, T Boutchacha
Microelectronics Reliability 42 (4-5), 573-582, 2002
3442002
Ultimately thin double-gate SOI MOSFETs
T Ernst, S Cristoloveanu, G Ghibaudo, T Ouisse, S Horiguchi, Y Ono, ...
IEEE transactions on electron devices 50 (3), 830-838, 2003
2702003
A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with gate-all-around or independent gates (Φ-Flash), suitable for full 3D integration
A Hubert, E Nowak, K Tachi, V Maffini-Alvaro, C Vizioz, C Arvet, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
1952009
Ionizing radiation induced leakage current on ultra-thin gate oxides
A Scarpa, A Paccagnella, F Montera, G Ghibaudo, G Pananakakis, ...
IEEE Transactions on Nuclear Science 44 (6), 1818-1825, 1997
1771997
Improved split CV method for effective mobility extraction in sub-0.1-μm Si MOSFETs
K Romanjek, F Andrieu, T Ernst, G Ghibaudo
IEEE Electron Device Letters 25 (8), 583-585, 2004
1742004
Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices
B De Salvo, G Ghibaudo, G Pananakakis, P Masson, T Baron, N Buffet, ...
IEEE Transactions on Electron Devices 48 (8), 1789-1799, 2001
1682001
Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors
Y Xu, T Minari, K Tsukagoshi, JA Chroboczek, G Ghibaudo
Journal of Applied Physics 107 (11), 114507, 2010
1672010
15nm-diameter 3D stacked nanowires with independent gates operation: ΦFET
C Dupré, A Hubert, S Becu, M Jublot, V Maffini-Alvaro, C Vizioz, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
1542008
A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment
F Monsieur, E Vincent, D Roy, S Bruyere, JC Vildeuil, G Pananakakis, ...
2002 IEEE International Reliability Physics Symposium. Proceedings. 40th …, 2002
1452002
HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks
D Garbin, E Vianello, O Bichler, Q Rafhay, C Gamrat, G Ghibaudo, ...
IEEE Transactions on Electron Devices 62 (8), 2494-2501, 2015
1422015
Unexpected mobility degradation for very short devices: A new challenge for CMOS scaling
A Cros, K Romanjek, D Fleury, S Harrison, R Cerutti, P Coronel, ...
2006 International Electron Devices Meeting, 1-4, 2006
1352006
Dry oxidation of silicon: A new model of growth including relaxation of stress by viscous flow
A Fargeix, G Ghibaudo
Journal of applied physics 54 (12), 7153-7158, 1983
1321983
Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects
S Eminente, S Cristoloveanu, R Clerc, A Ohata, G Ghibaudo
Solid-State Electronics 51 (2), 239-244, 2007
1312007
Temperature dependence of the Fowler–Nordheim current in metal‐oxide‐degenerate semiconductor structures
G Pananakakis, G Ghibaudo, R Kies, C Papadas
Journal of applied physics 78 (4), 2635-2641, 1995
1301995
75 nm damascene metal gate and high-k integration for advanced CMOS devices
B Guillaumot, X Garros, F Lime, K Oshima, B Tavel, JA Chroboczek, ...
Digest. International Electron Devices Meeting,, 355-358, 2002
1292002
Analytical models of subthreshold swing and threshold voltage for thin-and ultra-thin-film SOI MOSFETs
F Balestra, M Benachir, J Brini, G Ghibaudo
IEEE Transactions on Electron Devices 37 (11), 2303-2311, 1990
1281990
Electrical analysis of mechanical stress induced by STI in short MOSFETs using externally applied stress
C Gallon, G Reimbold, G Ghibaudo, RA Bianchi, R Gwoziecki, S Orain, ...
IEEE Transactions on Electron Devices 51 (8), 1254-1261, 2004
1222004
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