Dominique Tournier
Dominique Tournier
CTO - CALY-Technologies.
Correu electrònic verificat a - Pàgina d'inici
Citada per
Citada per
State of the art of high temperature power electronics
C Buttay, D Planson, B Allard, D Bergogne, P Bevilacqua, C Joubert, ...
Materials Science and Engineering: B 176 (4), 283-288, 2011
Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices
C Raynaud, D Tournier, H Morel, D Planson
Diamond and related materials 19 (1), 1-6, 2010
Planar edge termination design and technology considerations for 1.7-kV 4H-SiC PiN diodes
R Pérez, D Tournier, A Pérez-Tomás, P Godignon, N Mestres, J Millán
IEEE Transactions on Electron Devices 52 (10), 2309-2316, 2005
Towards an airborne high temperature SiC inverter
D Bergogne, H Morel, D Planson, D Tournier, P Bevilacqua, B Allard, ...
2008 IEEE Power Electronics Specialists Conference, 3178-3183, 2008
SiC integrated circuit control electronics for high-temperature operation
M Alexandru, V Banu, X Jordà, J Montserrat, M Vellvehi, D Tournier, ...
IEEE Transactions on Industrial Electronics 62 (5), 3182-3191, 2014
Ni/Ti ohmic and Schottky contacts on 4H-SiC formed with a single thermal treatment
R Perez, N Mestres, D Tournier, P Godignon, J Millan
Diamond and related materials 14 (3-7), 1146-1149, 2005
Vers une démocratie écologique. Le citoyen, le savant et le politique
B Dominique, W Kerry
Paris: Seuil, 2010
Barrier inhomogeneities and electrical characteristics of Ni/Ti bilayer Schottky contacts on 4H–SiC after high temperature treatments
R Pérez, N Mestres, J Montserrat, D Tournier, P Godignon
physica status solidi (a) 202 (4), 692-697, 2005
A digital-controller parameter-tuning approach, application to a switch-mode power supply
X Lin-Shi, F Morel, B Allard, D Tournier, JM Retif, S Guo, Y Gao
2007 IEEE International Symposium on Industrial Electronics, 3356-3361, 2007
Experimental determination of impact ionization coefficients in 4H-SiC
DM Nguyen, C Raynaud, N Dheilly, M Lazar, D Tournier, P Brosselard, ...
Diamond and related materials 20 (3), 395-397, 2011
A 4H-SiC high-power-density VJFET as controlled current limiter
D Tournier, P Godignon, J Montserrat, D Planson, C Raynaud, JP Chante, ...
IEEE Transactions on Industry Applications 39 (5), 1508-1513, 2003
SiC power devices operation from cryogenic to high temperature: investigation of various 1.2 kV SiC power devices
T Chailloux, C Calvez, N Thierry-Jebali, D Planson, D Tournier
Materials Science Forum 778, 1122-1125, 2014
Recent developments in SiC power devices and related technology
J Millan, P Godignon, D Tournier
2004 24th International Conference on Microelectronics (IEEE Cat. No …, 2004
Optical beam induced current measurements: principles and applications to SiC device characterization
C Raynaud, DM Nguyen, N Dheilly, D Tournier, P Brosselard, M Lazar, ...
physica status solidi (a) 206 (10), 2273-2283, 2009
Barrier height homogeneity for 4.5 kV 4H-SiC Schottky diodes
JM Bluet, D Ziane, G Guillot, D Tournier, P Brosselard, J Montserrat, ...
Superlattices and Microstructures 40 (4-6), 399-404, 2006
Composants de Puissance en Sic
D Tournier
Ed. Techniques Ingénieur, 2007
Fast over-current protection of high power IGBT modules
L Pierre, B Dominique, M Herve, A Bruno, R Jean-Francois
2005 European Conference on Power Electronics and Applications, 10 pp.-P. 10, 2005
Temperature dependence of 4H-SiC JBS and Schottky diodes after high temperature treatment of contact metal
R Pérez, N Mestres, D Tournier, X Jordá, P Godignon, M Vellvehi
Materials Science Forum 483, 945-948, 2005
Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes
H Hamad, C Raynaud, P Bevilacqua, D Tournier, B Vergne, D Planson
Applied Physics Letters 104 (8), 082102, 2014
A multi-physics model of the VJFET with a lateral channel
H Morel, Y Hamieh, D Tournier, R Robutel, F Dubois, D Risaletto, ...
Proc. Eur. Power Electron. Conf.(EPE-11), Birmingham, United Kingdom, 2809, 2011
En aquests moments el sistema no pot dur a terme l'operació. Torneu-ho a provar més tard.
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