Segregation analysis of cleft lip with or without cleft palate: a comparison of Danish and Japanese data. CS Chung, D Bixler, T Watanabe, H Koguchi, P Fogh-Andersen
American journal of human genetics 39 (5), 603, 1986
184 1986 Novel interatomic potential energy function for Si, O mixed systems TWT Watanabe, HFH Fujiwara, HNH Noguchi, THT Hoshino, ...
Japanese journal of applied physics 38 (4A), L366, 1999
183 1999 New linear-parabolic rate equation for thermal oxidation of silicon T Watanabe, K Tatsumura, I Ohdomari
Physical review letters 96 (19), 196102, 2006
74 2006 Modeling, Simulation, Fabrication, and Characterization of a 10- W/cm2 Class Si-Nanowire Thermoelectric Generator for IoT Applications M Tomita, S Oba, Y Himeda, R Yamato, K Shima, T Kumada, M Xu, ...
IEEE Transactions on Electron Devices 65 (11), 5180-5188, 2018
73 2018 Improved interatomic potential for stressed Si, O mixed systems T Watanabe, D Yamasaki, K Tatsumura, I Ohdomari
Applied surface science 234 (1-4), 207-213, 2004
73 2004 SiO2/Si interface structure and its formation studied by large-scale molecular dynamics simulation T Watanabe, K Tatsumura, I Ohdomari
Applied surface science 237 (1-4), 125-133, 2004
72 2004 Strain distribution around SiO2/Si interface in Si nanowires: a molecular dynamics study H Ohta, T Watanabe, I Ohdomari
Japanese journal of applied physics 46 (5S), 3277, 2007
65 2007 Residual order within thermally grown amorphous on crystalline silicon K Tatsumura, T Watanabe, D Yamasaki, T Shimura, M Umeno, I Ohdomari
Physical Review B 69 (8), 085212, 2004
54 2004 Miniaturized planar Si-nanowire micro-thermoelectric generator using exuded thermal field for power generation T Zhan, R Yamato, S Hashimoto, M Tomita, S Oba, Y Himeda, K Mesaki, ...
Science and Technology of advanced MaTerialS 19 (1), 443-453, 2018
53 2018 Modeling of SiO2/Si (100) interface structure by using extended-Stillinger-Weber potential T Watanabe, I Ohdomari
Thin Solid Films 343, 370-373, 1999
50 1999 Strain-induced transconductance enhancement by pattern dependent oxidation in silicon nanowire field-effect transistors A Seike, T Tange, Y Sugiura, I Tsuchida, H Ohta, T Watanabe, ...
Applied Physics Letters 91 (20), 2007
49 2007 Adsorption mechanism of ribosomal protein L2 onto a silica surface: a molecular dynamics simulation study R Tosaka, H Yamamoto, I Ohdomari, T Watanabe
Langmuir 26 (12), 9950-9955, 2010
48 2010 Diffusion of molecular and atomic oxygen in silicon oxide T Hoshino, M Hata, S Neya, Y Nishioka, T Watanabe, K Tatsumura, ...
Japanese journal of applied physics 42 (6R), 3560, 2003
43 2003 Effect of a layer on the thermal transport properties of nanowires: A molecular dynamics study T Zushi, K Ohmori, K Yamada, T Watanabe
Physical Review B 91 (11), 115308, 2015
42 2015 Reactions and diffusion of atomic and molecular oxygen in the network K Tatsumura, T Shimura, E Mishima, K Kawamura, D Yamasaki, ...
Physical Review B 72 (4), 045205, 2005
39 2005 The Possibility of mW/cm2 -Class On-Chip Power Generation Using Ultrasmall Si Nanowire-Based Thermoelectric Generators H Zhang, T Xu, S Hashimoto, T Watanabe
IEEE Transactions on Electron Devices 65 (5), 2016-2023, 2018
33 2018 Positive and negative dipole layer formation at high-k/SiO2 interfaces simulated by classical molecular dynamics K Shimura, R Kunugi, A Ogura, S Satoh, J Fei, K Kita, T Watanabe
Japanese journal of applied physics 55 (4S), 04EB03, 2016
31 2016 A novel hetero-junction Tunnel-FET using Semiconducting silicide–Silicon contact and its scalability Y Wu, H Hasegawa, K Kakushima, K Ohmori, T Watanabe, A Nishiyama, ...
Microelectronics Reliability 54 (5), 899-904, 2014
28 2014 Impact of structural strained layer near SiO2/Si interface on activation energy of time-dependent dielectric breakdown Y Harada, K Eriguchi, M Niwa, T Watanabe, I Ohdomari
Japanese Journal of Applied Physics 39 (7S), 4687, 2000
28 2000 Development of interatomic potential of Ge (1− x− y) SixSny ternary alloy semiconductors for classical lattice dynamics simulation M Tomita, M Ogasawara, T Terada, T Watanabe
Japanese journal of applied physics 57 (4S), 04FB04, 2018
27 2018