On the origin of carrier localization in quantum wells MA Pinault, E Tournie
Applied Physics Letters 78 (11), 1562-1564, 2001
171 2001 Mechanisms affecting the photoluminescence spectra of GaInNAs after post-growth annealing E Tournié, MA Pinault, A Guzmán
Applied physics letters 80 (22), 4148-4150, 2002
112 2002 Thick boron doped diamond single crystals for high power electronics J Achard, F Silva, R Issaoui, O Brinza, A Tallaire, H Schneider, K Isoird, ...
Diamond and Related Materials 20 (2), 145-152, 2011
106 2011 Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy A Hierro, JM Ulloa, JM Chauveau, A Trampert, MA Pinault, E Tournié, ...
Journal of applied physics 94 (4), 2319-2324, 2003
83 2003 Influence of alloy stability on the photoluminescence properties of GaAsN/GaAs quantum wells grown by molecular beam epitaxy MA Pinault, E Tournié
Applied Physics Letters 79 (21), 3404-3406, 2001
62 2001 Impurity-to-band activation energy in phosphorus doped diamond I Stenger, MA Pinault-Thaury, T Kociniewski, A Lusson, E Chikoidze, ...
Journal of Applied Physics 114 (7), 2013
55 2013 The n-type doping of diamond: Present status and pending questions MA Pinault, J Barjon, T Kociniewski, F Jomard, J Chevallier
Physica B: Condensed Matter 401, 51-56, 2007
52 2007 Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells JM Chauveau, A Trampert, KH Ploog, MA Pinault, E Tournié
Applied physics letters 82 (20), 3451-3453, 2003
51 2003 Growth of thick heavily boron-doped diamond single crystals: Effect of microwave power density R Issaoui, J Achard, F Silva, A Tallaire, A Tardieu, A Gicquel, MA Pinault, ...
Applied physics letters 97 (18), 2010
47 2010 n‐type CVD diamond doped with phosphorus using the MOCVD technology for dopant incorporation T Kociniewski, J Barjon, MA Pinault, F Jomard, A Lusson, D Ballutaud, ...
physica status solidi (a) 203 (12), 3136-3141, 2006
47 2006 GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm E Tournié, MA Pinault, M Laügt, JM Chauveau, A Trampert, KH Ploog
Applied physics letters 82 (12), 1845-1847, 2003
47 2003 Long wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy E Tournie, MA Pinault, S Vezian, J Massies, O Tottereau
Applied Physics Letters 77 (14), 2189-2191, 2000
47 2000 Determination of the phosphorus content in diamond using cathodoluminescence spectroscopy J Barjon, P Desfonds, MA Pinault, T Kociniewski, F Jomard, J Chevallier
Journal of applied physics 101 (11), 2007
46 2007 From GaAs: N to oversaturated GaAsN: Analysis of the band-gap reduction T Taliercio, R Intartaglia, B Gil, P Lefebvre, T Bretagnon, U Tisch, ...
Physical Review B 69 (7), 073303, 2004
45 2004 Phosphorus-doped (113) CVD diamond: A breakthrough towards bipolar diamond devices JB Marie-Amandine Pinault-Thaury, Solange Temgoua, Rémi Gillet, Hakima ...
Applied Physics Letters 114, 112106, 2019
42 * 2019 Homoepitaxial boron‐doped diamond with very low compensation J Barjon, E Chikoidze, F Jomard, Y Dumont, MA Pinault‐Thaury, R Issaoui, ...
physica status solidi (a) 209 (9), 1750-1753, 2012
42 2012 n-Type CVD diamond: Epitaxy and doping MA Pinault-Thaury, T Tillocher, N Habka, D Kobor, F Jomard, J Chevallier, ...
Materials Science and Engineering: B 176 (17), 1401-1408, 2011
40 2011 Correlations between structural and optical properties of GaInNAs quantum wells grown by MBE JM Chauveau, A Trampert, MA Pinault, E Tournié, K Du, KH Ploog
Journal of crystal growth 251 (1-4), 383-387, 2003
37 2003 High reactivity and stability of diamond electrodes: The influence of the B‐doping concentration E Vanhove, J De Sanoit, P Mailley, MA Pinault, F Jomard, P Bergonzo
physica status solidi (a) 206 (9), 2063-2069, 2009
33 2009 Growth of thick and heavily boron-doped (113)-oriented CVD diamond films A Tallaire, A Valentin, V Mille, L William, MA Pinault-Thaury, F Jomard, ...
Diamond and Related Materials 66, 61-66, 2016
32 2016