Seguir
Joy S. Lee
Joy S. Lee
Materials Science and Engineering Ph.D. Candidate, University of Texas at Dallas
Dirección de correo verificada de utdallas.edu
Título
Citado por
Citado por
Año
Large ferroelectric polarization of TiN/Hf0. 5Zr0. 5O2/TiN capacitors due to stress-induced crystallization at low thermal budget
SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, HS Kim, YC Byun, ...
Applied Physics Letters 111 (24), 2017
2662017
Atomic layer deposition of silicon nitride thin films: a review of recent progress, challenges, and outlooks
X Meng, YC Byun, HS Kim, JS Lee, AT Lucero, L Cheng, J Kim
Materials 9 (12), 1007, 2016
1302016
Low temperature (400° C) ferroelectric Hf0. 5Zr0. 5O2 capacitors for next-generation FRAM applications
SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, CD Young, J Kim, ...
2017 IEEE International Memory Workshop (IMW), 1-4, 2017
132017
Inversion behavior of ALD HfZrO2/InGaAs MOS capacitors with in-situ DEZ-H2O treatment
JG Lee, YC Byun, D Narayan, AT Lucero, J Kim
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–4