Spin injection into a graphene thin film at room temperature M Ohishi, M Shiraishi, R Nouchi, T Nozaki, T Shinjo, Y Suzuki
Japanese Journal of Applied Physics 46 (7L), L605, 2007
267 2007 Effect of Charge Puddles and Ripples on the Chemical Reactivity of Single Layer Graphene Supported by SiO2 /Si Substrate X Fan, R Nouchi, K Tanigaki
The Journal of Physical Chemistry C 115 (26), 12960-12964, 2011
99 2011 Charge-density depinning at metal contacts of graphene field-effect transistors R Nouchi, K Tanigaki
Applied Physics Letters 96 (25), 2010
97 2010 Robustness of Spin Polarization in Graphene‐Based Spin Valves M Shiraishi, M Ohishi, R Nouchi, N Mitoma, T Nozaki, T Shinjo, Y Suzuki
Advanced Functional Materials 19 (23), 3711-3716, 2009
97 2009 Extraction of the Schottky parameters in metal-semiconductor-metal diodes from a single current-voltage measurement R Nouchi
Journal of Applied Physics 116 (18), 2014
82 2014 Transfer characteristics in graphene field-effect transistors with Co contacts R Nouchi, M Shiraishi, Y Suzuki
Applied Physics Letters 93 (15), 2008
64 2008 Photo-oxidation of graphene in the presence of water N Mitoma, R Nouchi, K Tanigaki
The Journal of Physical Chemistry C 117 (3), 1453-1456, 2013
59 2013 Ring of R Nouchi, K Masunari, T Ohta, Y Kubozono, Y Iwasa
Physical review letters 97 (19), 196101, 2006
58 2006 Effects of electron-transfer chemical modification on the electrical characteristics of graphene XY Fan, R Nouchi, LC Yin, K Tanigaki
Nanotechnology 21 (47), 475208, 2010
57 2010 Output properties of C60 field-effect transistors with Au electrodes modified by 1-alkanethiols T Nagano, M Tsutsui, R Nouchi, N Kawasaki, Y Ohta, Y Kubozono, ...
The Journal of Physical Chemistry C 111 (19), 7211-7217, 2007
45 2007 Determination of carrier type doped from metal contacts to graphene by channel-length-dependent shift of charge neutrality points R Nouchi, T Saito, K Tanigaki
Applied physics express 4 (3), 035101, 2011
43 2011 Observation of negative contact resistances in graphene field-effect transistors R Nouchi, T Saito, K Tanigaki
Journal of Applied Physics 111 (8), 2012
39 2012 Gate-Tunable Thermal Metal–Insulator Transition in VO2 Monolithically Integrated into a WSe2 Field-Effect Transistor M Yamamoto, R Nouchi, T Kanki, AN Hattori, K Watanabe, T Taniguchi, ...
ACS applied materials & interfaces 11 (3), 3224-3230, 2019
33 2019 Coexistence of Dirac-cone states and superconductivity in iron pnictide Ba(Fe Y Tanabe, KK Huynh, S Heguri, G Mu, T Urata, J Xu, R Nouchi, N Mitoma, ...
Physical Review B 84 (10), 100508, 2011
33 2011 Logic circuits using solution-processed single-walled carbon nanotube transistors R Nouchi, H Tomita, A Ogura, H Kataura, M Shiraishi
Applied Physics Letters 92 (25), 2008
33 2008 Ambipolar behavior of 2, 5-diphenyl-1, 4-distyrylbenzene based field effect transistors: An experimental and theoretical study Y Wang, D Liu, S Ikeda, R Kumashiro, R Nouch, Y Xu, H Shang, Y Ma, ...
Applied Physics Letters 97 (3), 2010
31 2010 Influence of interface modifications on carrier mobilities in rubrene single crystal ambipolar field-effect transistors Y Wang, R Kumashiro, R Nouchi, N Komatsu, K Tanigaki
Journal of Applied Physics 105 (12), 2009
27 2009 Light emitting ambipolar field-effect transistors of 2, 5-bis (4-biphenyl) bithiophene single crystals with anisotropic carrier mobilities Y Wang, R Kumashiro, Z Li, R Nouchi, K Tanigaki
Applied Physics Letters 95 (10), 2009
26 2009 Anomalous hysteresis in organic field-effect transistors with SAM-modified electrodes: Structural switching of SAMs by electric field R Nouchi, Y Kubozono
Organic Electronics 11 (6), 1025-1030, 2010
23 2010 Reversible switching of charge injection barriers at metal/organic-semiconductor contacts modified with structurally disordered molecular monolayers R Nouchi, M Shigeno, N Yamada, T Nishino, K Tanigaki, M Yamaguchi
Applied Physics Letters 104 (1), 2014
21 2014 