Jo Shien Ng
Jo Shien Ng
Professor of Semiconductor Devices, University of Sheffield
Dirección de correo verificada de sheffield.ac.uk - Página principal
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Improved performance of multilayer quantum-dot lasers using a high-growth-temperature spacer layer
HY Liu, IR Sellers, TJ Badcock, DJ Mowbray, MS Skolnick, KM Groom, ...
Applied Physics Letters 85 (5), 704-706, 2004
2952004
Design and performance of an InGaAs-InP single-photon avalanche diode detector
S Pellegrini, RE Warburton, LJJ Tan, JS Ng, AB Krysa, K Groom, ...
IEEE journal of quantum electronics 42 (4), 397-403, 2006
1332006
Room-temperature light emission from quantum dots with a thin GaAsSb cap layer
HY Liu, MJ Steer, TJ Badcock, DJ Mowbray, MS Skolnick, F Suarez, ...
Journal of applied physics 99 (4), 046104, 2006
1112006
Impact ionization coefficients in 4H-SiC
WS Loh, BK Ng, JS Ng, SI Soloviev, HY Cha, PM Sandvik, CM Johnson, ...
IEEE Transactions on electron devices 55 (8), 1984-1990, 2008
802008
Localization effects and band gap of GaAsBi alloys
AR Mohmad, F Bastiman, CJ Hunter, RD Richards, SJ Sweeney, JS Ng, ...
physica status solidi (b) 251 (6), 1276-1281, 2014
712014
Excess avalanche noise in In0. 52Al0. 48As
YL Goh, ARJ Marshall, DJ Massey, JS Ng, CH Tan, M Hopkinson, ...
IEEE journal of quantum electronics 43 (5-6), 503-507, 2007
712007
The effect of Bi composition to the optical quality of GaAs1−xBix
AR Mohmad, F Bastiman, CJ Hunter, JS Ng, SJ Sweeney, JPR David
Applied Physics Letters 99 (4), 042107, 2011
682011
Avalanche multiplication in InAlAs
YL Goh, DJ Massey, ARJ Marshall, JS Ng, CH Tan, WK Ng, GJ Rees, ...
IEEE Transactions on Electron Devices 54 (1), 11-16, 2006
592006
Effects of rapid thermal annealing on GaAs1-xBix alloys
AR Mohmad, F Bastiman, CJ Hunter, R Richards, SJ Sweeney, JS Ng, ...
Applied Physics Letters 101 (1), 012106, 2012
582012
Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth
F Bastiman, ARB Mohmad, JS Ng, JPR David, SJ Sweeney
Journal of crystal growth 338 (1), 57-61, 2012
542012
Avalanche noise characteristics in submicron InP diodes
LJJ Tan, JS Ng, CH Tan, JPR David
IEEE Journal of Quantum Electronics 44 (4), 378-382, 2008
542008
Temperature dependence of avalanche breakdown in InP and InAlAs
LJJ Tan, DSG Ong, JS Ng, CH Tan, SK Jones, Y Qian, JPR David
IEEE Journal of Quantum Electronics 46 (8), 1153-1157, 2010
512010
Improving optical properties of 1.55 μm GaInNAs/GaAs multiple quantum wells with Ga (In) NAs barrier and space layer
HY Liu, M Hopkinson, P Navaretti, M Gutierrez, JS Ng, JPR David
Applied physics letters 83 (24), 4951-4953, 2003
512003
Effect of dead space on avalanche speed [APDs]
JS Ng, CH Tan, BK Ng, PJ Hambleton, JPR David, GJ Rees, AH You, ...
IEEE Transactions on Electron Devices 49 (4), 544-549, 2002
512002
Absorption Characteristics ofDiodes in the Near-Infrared
CJ Hunter, F Bastiman, AR Mohmad, R Richards, JS Ng, SJ Sweeney, ...
IEEE Photonics Technology Letters 24 (23), 2191-2194, 2012
442012
Field dependence of impact ionization coefficients in In/sub 0.53/Ga/sub 0.47/As
JS Ng, CH Tan, JPR David, G Hill, GJ Rees
IEEE Transactions on Electron Devices 50 (4), 901-905, 2003
392003
Photoluminescence investigation of high quality on GaAs
AR Mohmad, F Bastiman, JS Ng, SJ Sweeney, JPR David
Applied Physics Letters 98 (12), 122107, 2011
352011
Temperature dependence of AlGaAs soft X-ray detectors
AM Barnett, DJ Bassford, JE Lees, JS Ng, CH Tan, JPR David
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2010
352010
Fabrication of InAs photodiodes with reduced surface leakage current
ARJ Marshall, CH Tan, JPR David, JS Ng, M Hopkinson
Optical Materials in Defence Systems Technology IV 6740, 67400H, 2007
312007
1300 nm wavelength InAs quantum dot photodetector grown on silicon
I Sandall, JS Ng, JPR David, CH Tan, T Wang, H Liu
Optics express 20 (10), 10446-10452, 2012
302012
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