Ignacio Esquivias
Ignacio Esquivias
Verified email at upm.es
Cited by
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Control of differential gain, nonlinear gain and damping factor for high-speed application of GaAs-based MQW lasers
JD Ralston, S Weisser, I Esquivias, EC Larkins, J Rosenzweig, PJ Tasker, ...
IEEE Journal of quantum electronics 29 (6), 1648-1659, 1993
Damping-limited modulation bandwidths up to 40 GHz in undoped short-cavity In/sub 0.35/Ga/sub 0.65/As-GaAs multiple-quantum-well lasers
S Weisser, EC Larkins, K Czotscher, W Benz, J Daleiden, I Esquivias, ...
IEEE Photonics Technology Letters 8 (5), 608-610, 1996
Nonlinear properties of tapered laser cavities
S Sujecki, L Borruel, J Wykes, P Moreno, B Sumpf, P Sewell, H Wenzel, ...
IEEE Journal of selected topics in quantum electronics 9 (3), 823-834, 2003
Impedance characteristics of quantum-well lasers
S Weisser, I Esquivias, PJ Tasker, JD Ralston, B Romero, J Rosenzweig
IEEE photonics technology letters 6 (12), 1421-1423, 1994
Quasi-3-D simulation of high-brightness tapered lasers
L Borruel, S Sujecki, P Moreno, J Wykes, M Krakowski, B Sumpf, P Sewell, ...
IEEE journal of quantum electronics 40 (5), 463-472, 2004
Simple model for calculating the ratio of the carrier capture and escape times in quantum-well lasers
B Romero, J Arias, I Esquivias, M Cada
Applied Physics Letters 76 (12), 1504-1506, 2000
Efficient high-speed direct modulation in p-doped In0. 35 Ga0. 65As/GaAs multiquantum well lasers
S Weisser, JD Ralston, EC Larkins, I Esquivias, PJ Tasker, J Fleissner, ...
Electronics Letters 28 (23), 2141-2143, 1992
Carrier dynamics and microwave characteristics of GaAs-based quantum-well lasers
I Esquivias, S Weisser, B Romero, JD Ralston, J Rosenzweig
IEEE Journal of Quantum electronics 35 (4), 635-646, 1999
Beam properties of 980-nm tapered lasers with separate contacts: Experiments and simulations
H Odriozola, JMG Tijero, L Borruel, I Esquivias, H Wenzel, F Dittmar, ...
IEEE journal of quantum electronics 45 (1), 42-50, 2008
Impedance, modulation response, and equivalent circuit of ultra-high-speed In/sub 0.35/Ga/sub 0.65/As/GaAs MQW lasers with p-doping
S Weisser, I Esquivias, PJ Tasker, JD Ralston, J Rosenzweig
IEEE photonics technology letters 6 (7), 782-785, 1994
Photonic generation of microwave signals using a single-mode VCSEL subject to dual-beam orthogonal optical injection
P Pérez, A Quirce, A Valle, A Consoli, I Noriega, L Pesquera, I Esquivias
IEEE Photonics Journal 7 (1), 1-14, 2015
Gain, index variation, and linewidth-enhancement factor in 980-nm quantum-well and quantum-dot lasers
D Rodriguez, I Esquivias, S Deubert, JP Reithmaier, A Forchel, ...
IEEE journal of quantum electronics 41 (2), 117-126, 2005
Carrier capture and escape times in In 0.35 Ga 0.65 As-GaAs multiquantum-well lasers determined from high-frequency electrical impedance measurements
I Esquivias, S Weisser, B Romero, D Ralston, J Rosenzweig
IEEE Photonics Technology Letters 8 (10), 1294-1296, 1996
High-power tunnel-injection 1060-nm InGaAs–(Al) GaAs quantum-dot lasers
EM Pavelescu, C Gilfert, JP Reithmaier, A Martin-Minguez, I Esquivias
IEEE Photonics Technology Letters 21 (14), 999-1001, 2009
Improved performance from pseudomorphic In y Ga/sub 1-y/As-GaAs MQW lasers with low growth temperature Al x Ga/sub 1-x/As short-period superlattice cladding
EC Larkins, W Benz, I Esquivias, W Rothemund, M Baeumler, S Weisser, ...
IEEE photonics technology letters 7 (1), 16-19, 1995
Vertically compact 15 GHz GaAs/AlGaAs multiple quantum well laser grown by molecular beam epitaxy
JD Ralston, DFG Gallagher, PJ Tasker, HP Zappe, I Esquivias, J Fleissner
Electronics Letters 27 (19), 1720-1722, 1991
High-peak-power pulse generation from a monolithic master oscillator power amplifier at 1.5 μm
P Adamiec, B Bonilla, A Consoli, JMG Tijero, S Aguilera, I Esquivias
Applied Optics 51 (30), 7160-7164, 2012
Design strategies to increase the brightness of gain guided tapered lasers
L Borruel, H Odriozola, JMG Tijero, I Esquivias, S Sujecki, EC Larkins
Optical and quantum electronics 40 (2-4), 175-189, 2008
High Power Three-Section Integrated Master Oscillator Power Amplifier at 1.5
M Faugeron, M Vilera, M Krakowski, Y Robert, E Vinet, P Primiani, ...
IEEE Photonics Technology Letters 27 (13), 1449-1452, 2015
GaInAs/(Al) GaAs quantum-dot lasers with high wavelength stability
EM Pavelescu, C Gilfert, JP Reithmaier, A Martin-Minguez, I Esquivias
Semiconductor science and technology 23 (8), 085022, 2008
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