Gaudenzio Meneghesso

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Coautors

Enrico ZanoniProfessor, Electronics, University of PadovaCorreu electrònic verificat a dei.unipd.it
Matteo MeneghiniAssociate Professor at the University of PadovaCorreu electrònic verificat a dei.unipd.it
Carlo De SantiAssistant professor, UNIPDCorreu electrònic verificat a dei.unipd.it
Alessandro ChiniAssociate Professor of Electronics, University of Modena and Reggio Emilia, ItalyCorreu electrònic verificat a unimore.it
Giovanni VerzellesiProfessor of Electronics, University of Modena and Reggio Emilia, ItalyCorreu electrònic verificat a unimore.it
Fabiana RampazzoUniversity of PadovaCorreu electrònic verificat a dei.unipd.it
Nicola TrivellinAssistant professor at University of Padova - General Manager at LightCube SRLCorreu electrònic verificat a unipd.it
Davide BisiTransphorm, Inc.Correu electrònic verificat a transphormusa.com
Andrea CesterDepartment of Information Engineering, Padova UniversityCorreu electrònic verificat a dei.unipd.it
Marco BarbatoUniversity of PadovaCorreu electrònic verificat a dei.unipd.it
Giovanna MuraDIEE University of CagliariCorreu electrònic verificat a diee.unica.it
Lorenzo TrevisanelloAriannaCorreu electrònic verificat a ariannaled.com
Denis MarconimecCorreu electrònic verificat a imec.be
Maura PavesiDept. of Marhematical, Physical and Computer Sciences - Univ.of Parma ITALYCorreu electrònic verificat a unipr.it
ALESSANDRO PACCAGNELLADipartimento di Ingegneria dell'Informazione, Università di PadovaCorreu electrònic verificat a dei.unipd.it
Michele GoanoAssociate Professor, Politecnico di Torino, Dipartimento di Elettronica e TelecomunicazioniCorreu electrònic verificat a polito.it
Francesco BertazziAssistant Professor, Politecnico di Torino, Dipartimento di Elettronica e TelecomunicazioniCorreu electrònic verificat a polito.it
Umesh MishraUCSBCorreu electrònic verificat a ece.ucsb.edu
Matteo Dal LagoDigimax srlCorreu electrònic verificat a digimax.it
Farid MedjdoubIEMN - CNRSCorreu electrònic verificat a iemn.fr

Gaudenzio Meneghesso

University of Padova, Dept. Of Information Engineering

Correu electrònic verificat a dei.unipd.it - Pàgina d'inici

GaN- SiC- Based Power Devices Optoelectronics (LED & Laser) Photovoltaics MEMS Electrostatic Discharge


Títol Ordena per cites Ordena per any Ordena per títol	Citada per Citada per	Any
Reliability of GaN high-electron-mobility transistors: State of the art and perspectives G Meneghesso, G Verzellesi, F Danesin, F Rampazzo, F Zanon, A Tazzoli, ... IEEE Transactions on Device and Materials Reliability 8 (2), 332-343, 2008	615	2008
The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018	415	2018
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies G Verzellesi, D Saguatti, M Meneghini, F Bertazzi, M Goano, ... Journal of Applied Physics 114 (7), 10_1, 2013	357	2013
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs G Meneghesso, G Verzellesi, R Pierobon, F Rampazzo, A Chini, ... IEEE Transactions on Electron Devices 51 (10), 1554-1561, 2004	349	2004
A review on the reliability of GaN-based LEDs M Meneghini, LR Trevisanello, G Meneghesso, E Zanoni IEEE Transactions on Device and Materials Reliability 8 (2), 323-331, 2008	278	2008
A review on the physical mechanisms that limit the reliability of GaN-based LEDs M Meneghini, A Tazzoli, G Mura, G Meneghesso, E Zanoni IEEE Transactions on Electron Devices 57 (1), 108-118, 2009	275	2009
Deep-level characterization in GaN HEMTs-Part I: Advantages and limitations of drain current transient measurements D Bisi, M Meneghini, C De Santi, A Chini, M Dammann, P Brueckner, ... IEEE Transactions on electron devices 60 (10), 3166-3175, 2013	248	2013
Accelerated life test of high brightness light emitting diodes L Trevisanello, M Meneghini, G Mura, M Vanzi, M Pavesi, G Meneghesso, ... IEEE Transactions on Device and Materials Reliability 8 (2), 304-311, 2008	193	2008
Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs G Meneghesso, F Rampazzo, P Kordos, G Verzellesi, E Zanoni IEEE Transactions on Electron Devices 53 (12), 2932-2941, 2006	180	2006
Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs M Faqir, G Verzellesi, G Meneghesso, E Zanoni, F Fantini IEEE Transactions on Electron Devices 55 (7), 1592-1602, 2008	138	2008
A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes M Meneghini, N Trivellin, G Meneghesso, E Zanoni, U Zehnder, B Hahn Journal of Applied Physics 106 (11), 114508, 2009	132	2009
Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias M Meneghini, A Stocco, M Bertin, D Marcon, A Chini, G Meneghesso, ... Applied Physics Letters 100 (3), 033505, 2012	129	2012
AlGaN/GaN-based HEMTs failure physics and reliability: Mechanisms affecting gate edge and Schottky junction E Zanoni, M Meneghini, A Chini, D Marcon, G Meneghesso IEEE Transactions on Electron Devices 60 (10), 3119-3131, 2013	122	2013
Investigation of trapping and hot-electron effects in GaN HEMTs by means of a combined electrooptical method M Meneghini, N Ronchi, A Stocco, G Meneghesso, UK Mishra, Y Pei, ... IEEE Transactions on electron devices 58 (9), 2996-3003, 2011	120	2011
Performance degradation of high-brightness light emitting diodes under DC and pulsed bias S Buso, G Spiazzi, M Meneghini, G Meneghesso IEEE Transactions on Device and Materials Reliability 8 (2), 312-322, 2008	118	2008
Mechanisms of RF current collapse in AlGaN–GaN high electron mobility transistors M Faqir, G Verzellesi, A Chini, F Fantini, F Danesin, G Meneghesso, ... IEEE Transactions on Device and Materials Reliability 8 (2), 240-247, 2008	117	2008
Analysis of a high-power-factor electronic ballast for high brightness light emitting diodes G Spiazzi, S Buso, G Meneghesso 2005 IEEE 36th Power Electronics Specialists Conference, 1494-1499, 2005	115	2005
Reliability issues of gallium nitride high electron mobility transistors G Meneghesso, M Meneghini, A Tazzoli, A Stocco, A Chini, E Zanoni International Journal of Microwave and Wireless Technologies 2 (1), 39, 2010	113	2010
Localized damage in AlGaN/GaN HEMTs induced by reverse-bias testing E Zanoni, F Danesin, M Meneghini, A Cetronio, C Lanzieri, M Peroni, ... IEEE Electron Device Letters 30 (5), 427-429, 2009	111	2009
Power GaN Devices M Meneghini, G Meneghesso, E Zanoni Cham: Springer International Publishing, 2017	105	2017

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