Eva Monroy
Eva Monroy
CEA, IRIG, PHELIQS-NPSC, Grenoble, France
Correu electrònic verificat a cea.fr - Pàgina d'inici
Títol
Citada per
Citada per
Any
Wide-bandgap semiconductor ultraviolet photodetectors
E Monroy, F Omnes, F Calle
Semiconductor science and technology 18, R33, 2003
12242003
The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN-and AlN-layers grown by molecular beam epitaxy on Si(111)
MA Sanchez-Garcia, E Calleja, E Monroy, FJ Sanchez, F Calle, E Munoz, ...
Journal of crystal growth 183 (1), 23-30, 1998
3731998
III nitrides and UV detection
E Munoz, E Monroy, JL Pau, F Calle, F Omnes, P Gibart
Journal of Physics: Condensed Matter 13, 7115, 2001
3232001
Systematic experimental and theoretical investigation of intersubband absorption in GaN∕ AlN quantum wells
M Tchernycheva, L Nevou, L Doyennette, FH Julien, E Warde, F Guillot, ...
Physical Review B 73 (12), 125347, 2006
2932006
Growth of III-nitrides on Si (1 1 1) by molecular beam epitaxy Doping, optical, and electrical properties
E Calleja, MA Sánchez-Garcıa, FJ Sanchez, F Calle, FB Naranjo, ...
Journal of crystal growth 201, 296-317, 1999
2341999
High-performance GaN pn junction photodetectors for solar ultraviolet applications
E Monroy, E Munoz, FJ Sánchez, F Calle, E Calleja, B Beaumont, P Gibart, ...
Semiconductor science and technology 13, 1042, 1998
2321998
High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN
D Walker, E Monroy, P Kung, J Wu, M Hamilton, FJ Sanchez, J Diaz, ...
Applied physics letters 74, 762, 1999
2251999
GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance
PK Kandaswamy, F Guillot, E Bellet-Amalric, E Monroy, L Nevou, ...
Journal of Applied Physics 104 (9), 093501, 2008
2122008
High-quality visible-blind AlGaN pin photodiodes
E Monroy, M Hamilton, D Walker, P Kung, FJ Sánchez, M Razeghi
Applied physics letters 74, 1171, 1999
1991999
Photoconductor gain mechanisms in GaN ultraviolet detectors
E Munoz, E Monroy, JA Garrido, I Izpura, FJ Sanchez, ...
Applied physics letters 71, 870, 1997
1881997
Photoconductive gain modelling of GaN photodetectors
JA Garrido, E Monroy, I Izpura, E Munoz
Semiconductor science and technology 13, 563, 1998
1721998
III-nitride semiconductors for intersubband optoelectronics: a review
M Beeler, E Trichas, E Monroy
Semiconductor Science and Technology 28 (7), 074022, 2013
1712013
AlGaN-based UV photodetectors
E Monroy, F Calle, JL Pau, E Munoz, F Omnes, B Beaumont, P Gibart
Journal of crystal growth 230 (3), 537-543, 2001
1702001
AlGaN metal–semiconductor–metal photodiodes
E Monroy, F Calle, E Munoz, F Omnes
Applied physics letters 74, 3401, 1999
1661999
Room-Temperature Photodetection Dynamics of Single GaN Nanowires
F González-Posada, R Songmuang, M Den Hertog, E Monroy
Nano Letters 12 (1), 172-176, 2012
1512012
Near infrared quantum cascade detector in GaN/AlGaN/AlN heterostructures
A Vardi, G Bahir, F Guillot, C Bougerol, E Monroy, SE Schacham, ...
Applied Physics Letters 92 (1), 011112, 2008
1442008
Analysis and modeling of AlGaN-based Schottky barrier photodiodes
E Monroy, F Calle, JL Pau, FJ Sanchez, E Munoz, F Omnes, B Beaumont, ...
Journal of Applied Physics 88, 2081, 2000
1392000
Intrinsic ferromagnetism in wurtzite (Ga, Mn) N semiconductor
E Sarigiannidou, F Wilhelm, E Monroy, RM Galera, E Bellet-Amalric, ...
Physical Review B 74 (4), 041306, 2006
1352006
Structure of GaN quantum dots grown under “modified Stranski–Krastanow” conditions on AlN
N Gogneau, D Jalabert, E Monroy, T Shibata, M Tanaka, B Daudin
Journal of applied physics 94, 2254, 2003
1242003
Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy
A Helman, M Tchernycheva, A Lusson, E Warde, FH Julien, K Moumanis, ...
Applied physics letters 83, 5196, 2003
1172003
En aquests moments el sistema no pot dur a terme l'operació. Torneu-ho a provar més tard.
Articles 1–20