Composition dependence of optical phonon energies and Raman line broadening in hexagonal VY Davydov, IN Goncharuk, AN Smirnov, AE Nikolaev, WV Lundin, ...
Physical Review B 65 (12), 125203, 2002
180 2002 High-quality AlN grown on Si (111) by gas-source molecular-beam epitaxy with ammonia SA Nikishin, VG Antipov, S Francoeur, NN Faleev, GA Seryogin, ...
Applied physics letters 75 (4), 484-486, 1999
93 1999 Insulating GaN: Zn layers grown by hydride vapor phase epitaxy on SiC substrates NI Kuznetsov, AE Nikolaev, AS Zubrilov, YV Melnik, VA Dmitriev
Applied physics letters 75 (20), 3138-3140, 1999
85 1999 III-V compounds semiconductor device with an AlxByInzGa1-xy-zN non continuous quantum dot layer AE Nikolaev, YV Melnik, KV Vassilevski, VA Dmitriev
US Patent 6,479,839, 2002
76 2002 Properties of free-standing GaN bulk crystals grown by HVPE Y Melnik, A Nikolaev, I Nikitina, K Vassilevski, V Dmitriev
MRS Online Proceedings Library (OPL) 482, 269, 1997
68 1997 Hydrogen effects in III-nitride MOVPE EV Yakovlev, RA Talalaev, AS Segal, AV Lobanova, WV Lundin, ...
Journal of Crystal Growth 310 (23), 4862-4866, 2008
66 2008 AlN wafers fabricated by hydride vapor phase epitaxy A Nikolaev, I Nikitina, A Zubrilov, M Mynbaeva, Y Melnik, V Dmitriev
MRS Internet Journal of Nitride Semiconductor Research 5, 432-437, 2000
56 2000 Fermi level dependence of hydrogen diffusivity in GaN AY Polyakov, NB Smirnov, SJ Pearton, F Ren, B Theys, F Jomard, ...
Applied Physics Letters 79 (12), 1834-1836, 2001
49 2001 X-ray determination of threading dislocation densities in GaN/Al2O3 (0001) films grown by metalorganic vapor phase epitaxy VS Kopp, VM Kaganer, MV Baidakova, WV Lundin, AE Nikolaev, ...
journal of Applied Physics 115 (7), 2014
48 2014 Blackbody-like emission of terahertz radiation from AlGaN/GaN heterostructure under electron heating in lateral electric field VA Shalygin, LE Vorobjev, DA Firsov, AN Sofronov, GA Melentyev, ...
Journal of Applied Physics 109 (7), 2011
45 2011 Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice WV Lundin, AE Nikolaev, AV Sakharov, EE Zavarin, GA Valkovskiy, ...
Journal of Crystal Growth 315 (1), 267-271, 2011
43 2011 III-V compound semiconductor device with an AlxByInzGa1-xy-zN1-a-bPaAsb non-continuous quantum dot layer AE Nikolaev, YV Melnik, KV Vassilevski, VA Dmitriev
US Patent 6,849,862, 2005
40 2005 Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPE DV Tsvetkov, AE Nikolaev, VA Dmitriev
US Patent 6,660,083, 2003
40 2003 High-temperature hardness of bulk single-crystal AlN I Yonenaga, A Nikolaev, Y Melnik, V Dmitriev
MRS Online Proceedings Library (OPL) 693, I10. 4.1, 2001
39 2001 Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN: Mg layers WV Lundin, AV Sakharov, EE Zavarin, MA Sinitsyn, AE Nikolaev, ...
Semiconductors 43 (7), 963-967, 2009
37 2009 Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPE DV Tsvetkov, AE Nikolaev, VA Dmitriev
US Patent 6,706,119, 2004
37 2004 AlN substrates: fabrication via vapor phase growth and characterization Y Melnik, V Soukhoveev, V Ivantsov, V Sizov, A Pechnikov, K Tsvetkov, ...
physica status solidi (a) 200 (1), 22-25, 2003
37 2003 Fabrication and characterization of heterojunction diodes with HVPE-grown GaN on 4H-SiC E Danielsson, CM Zetterling, M Ostling, A Nikolaev, IP Nikitina, V Dmitriev
IEEE Transactions on Electron Devices 48 (3), 444-449, 2001
37 2001 Method of epitaxially growing submicron group III nitride layers utilizing HVPE DV Tsvetkov, AE Nikolaev, VA Dmitriev
US Patent 6,656,272, 2003
36 2003 Method for growing p-type III-V compound material utilizing HVPE techniques AE Nikolaev, YV Melnik, KV Vassilevski, VA Dmitriev
US Patent 6,555,452, 2003
34 2003 
Konstantin Vasilevskiy (Vassilevski)Senior Research Associate, Newcastle UniversityCorreu electrònic verificat a ncl.ac.uk
