One-step grown aligned bulk carbon nanotubes by chloride mediated chemical vapor deposition Y Inoue, K Kakihata, Y Hirono, T Horie, A Ishida, H Mimura
Applied physics letters 92 (21), 2008
221 2008 Seebeck coefficient of ultrathin silicon-on-insulator layers F Salleh, K Asai, A Ishida, H Ikeda
Applied physics express 2 (7), 071203, 2009
72 2009 Observation of quantum‐size effects in optical transmission spectra of PbTe/Pb1−x Eux A Ishida, S Matsuura, M Mizuno, H Fujiyasu
Applied physics letters 51 (7), 478-480, 1987
56 1987 Strong luminescence from dislocation-free Y Inoue, T Hoshino, S Takeda, K Ishino, A Ishida, H Fujiyasu, H Kominami, ...
Applied physics letters 85 (12), 2340-2342, 2004
53 2004 Pb1−x Srx A Ishida, K Muramatsu, H Takashiba, H Fujiyasu
Applied physics letters 55 (5), 430-431, 1989
53 1989 Superconducting behavior in PbTe SnTe superlattices K Murase, S Ishida, S Takaoka, T Okumura, H Fujiyasu, A Ishida, M Aoki
Surface Science 170 (1-2), 486-490, 1986
48 1986 Seebeck effect in PbTe films and EuTe/PbTe superlattices A Ishida, T Yamada, D Cao, Y Inoue, M Veis, T Kita
Journal of Applied Physics 106 (2), 2009
47 2009 Properties of Pb1−x Eux A Ishida, S Matsuura, M Mizuno, Y Sase, H Fujiyasu
Journal of applied physics 63 (9), 4572-4574, 1988
45 1988 PbSnTe multiple quantum well lasers for pulsed operation at 6 μm up to 204 K K Shinohara, Y Nishijima, H Ebe, A Ishida, H Fujiyasu
Applied physics letters 47 (11), 1184-1186, 1985
44 1985 On the type of superlattices in lead tin telluride system K Murase, S Shinomura, S Takaoka, A Ishida, H Fujiyasu
Superlattices and Microstructures 1 (2), 177-182, 1985
43 1985 Properties of PbTe/EuTe short period superlattices and their application to laser diodes A Ishida, S Matsuura, H Fujiyasu, H Ebe, K Shinohara
Superlattices and Microstructures 2 (6), 575-580, 1986
42 1986 Semimetallic Hall properties of PbTe‐SnTe superlattice A Ishida, M Aoki, H Fujiyasu
Journal of applied physics 58 (5), 1901-1903, 1985
41 1985 PbSrS MQW lasers and the effect of quantum well on operation temperature A Ishida, N Sakurai, K Aikawa, H Fujiyasu
Solid-state electronics 37 (4-6), 1141-1144, 1994
38 1994 Interband transitions of ZnTe‐ZnSe superlattices prepared on GaAs (100) by hot wall epitaxy H Yang, A Ishida, H Fujiyasu, H Kuwabara
Journal of applied physics 65 (7), 2838-2842, 1989
38 1989 Sn diffusion effects on x‐ray diffraction patterns of Pb1−x Snx y 1−y superlattices A Ishida, M Aoki, H Fujiyasu
Journal of applied physics 58 (2), 797-801, 1985
37 1985 Electrical and thermoelectrical properties of SnTe-based films and superlattices A Ishida, T Yamada, T Tsuchiya, Y Inoue, S Takaoka, T Kita
Applied Physics Letters 95 (12), 2009
35 2009 Optical and electrical properties of PbTe-Pb1− xSnxTe superlattices prepared on KC1 by a HWE H Fujiyasu, A Ishida, H Kuwabara, S Shimomura, S Takaoka, K Murase
Surface Science 142 (1-3), 579-585, 1984
34 1984 Growth of GaN films by hot wall epitaxy A Ishida, E Yamamoto, K Ishino, K Ito, H Fujiyasu, Y Nakanishi
Applied physics letters 67 (5), 665-666, 1995
31 1995 Monolithic photovoltaic PbS-on-Si infrared-sensor array J Masek, A Ishida, H Zogg, C Maissen, S Blunier
IEEE electron device letters 11 (1), 12-14, 1990
31 1990 Enhanced Seebeck coefficient in EuTe∕ PbTe [100] short-period superlattices A Ishida, D Cao, S Morioka, M Veis, Y Inoue, T Kita
Applied Physics Letters 92 (18), 2008
30 2008 
