Compact hierarchical bipolar transistor modeling with HICUM A Chakravorty
World Scientific, 2010
124 * 2010 Analytical model of subthreshold current and slope for asymmetric 4-T and 3-T double-gate MOSFETs A Dey, A Chakravorty, N DasGupta, A DasGupta
IEEE transactions on electron devices 55 (12), 3442-3449, 2008
99 2008 Analytic estimation of thermal resistance in HBTs A Chakravorty, R D’Esposito, S Balanethiram, S Frégonèse, T Zimmer
IEEE Transactions on Electron Devices 63 (8), 2994-2998, 2016
23 2016 Effects of BEOL on self-heating and thermal coupling in SiGe multi-finger HBTs under real operating condition ADD Dwivedi, A Chakravorty, R D’esposito, AK Sahoo, S Fregonese, ...
Solid-State Electronics 115, 1-6, 2016
22 2016 Reliability of high-speed SiGe: C HBT under electrical stress close to the SOA limit T Jacquet, G Sasso, A Chakravorty, N Rinaldi, K Aufinger, T Zimmer, ...
Microelectronics Reliability 55 (9-10), 1433-1437, 2015
22 2015 Design of novel high-Q multipath parallel-stacked inductor VNR Vanukuru, A Chakravorty
IEEE Transactions on Electron Devices 61 (11), 3905-3909, 2014
22 2014 Integrated layout optimized high-g inductors on high-resistivity SOI substrates for RF front-end modules VNR Vanukuru, A Chakravorty
2014 International Conference on Signal Processing and Communications (SPCOM …, 2014
22 2014 Compact modeling of high frequency correlated noise in HBTs P Sakalas, J Herricht, A Chakravorty, M Schroter
2006 Bipolar/BiCMOS Circuits and Technology Meeting, 1-4, 2006
22 2006 Accurate modeling of thermal resistance for on-wafer SiGe HBTs using average thermal conductivity S Balanethiram, A Chakravorty, R D’Esposito, S Fregonese, D Céli, ...
IEEE Transactions on Electron Devices 64 (9), 3955-3960, 2017
20 2017 Modeling of SOI-LDMOS transistor including impact ionization, snapback, and self-heating U Radhakrishna, A DasGupta, N DasGupta, A Chakravorty
IEEE transactions on electron devices 58 (11), 4035-4041, 2011
20 2011 Compact Modeling of Proximity Effect in High- J Sathyasree, V Vanukuru, D Nair, A Chakravorty
IEEE Electron Device Letters 39 (4), 588-590, 2018
19 2018 High-Q Characteristics of Variable Width Inductors With Reverse Excitation VNR Vanukuru, A Chakravorty
IEEE Transactions on Electron Devices 61 (9), 3350-3354, 2014
19 2014 A scalable, broadband, and physics-based model for on-chip rectangular spiral inductors SS Jayaraman, V Vanukuru, D Nair, A Chakravorty
IEEE Transactions on Magnetics 55 (9), 1-6, 2019
18 2019 Low-frequency noise in advanced SiGe: C HBTs—Part I: Analysis C Mukherjee, T Jacquet, A Chakravorty, T Zimmer, J Böck, K Aufinger, ...
IEEE Transactions on Electron Devices 63 (9), 3649-3656, 2016
18 2016 SOI-LDMOS Transistors With Optimized Partial n+ Buried Layer for Improved Performance in Power Amplifier Applications KNS Nikhil, N DasGupta, A DasGupta, A Chakravorty
IEEE Transactions on Electron Devices 65 (11), 4931-4937, 2018
16 2018 Analysis of high-frequency measurement of transistors along with electromagnetic and SPICE cosimulation S Fregonese, M Cabbia, C Yadav, M Deng, SR Panda, M De Matos, ...
IEEE Transactions on Electron Devices 67 (11), 4770-4776, 2020
15 2020 Miniaturized millimeter-wave narrow bandpass filter in 0.18 μm CMOS technology using spiral inductors and inter digital capacitors VNR Vanukuru, N Godavarthi, A Chakravorty
2014 International Conference on Signal Processing and Communications (SPCOM …, 2014
15 2014 High density solenoidal series pair symmetric inductors and transformers VNR Vanukuru, A Chakravorty
IEEE Transactions on Electron Devices 61 (7), 2503-2508, 2014
15 2014 Extraction of BEOL contributions for thermal resistance in SiGe HBTs S Balanethiram, R D’Esposito, A Chakravorty, S Fregonese, T Zimmer
IEEE Transactions on Electron Devices 64 (3), 1380-1384, 2017
14 2017 Series stacked multipath inductor with high self resonant frequency VNR Vanukuru, A Chakravorty
IEEE Transactions on Electron Devices 62 (3), 1058-1062, 2015
14 2015 