Marina Antoniou
Marina Antoniou
Verified email at warwick.ac.uk - Homepage
Title
Cited by
Cited by
Year
The superjunction insulated gate bipolar transistor optimization and modeling
M Antoniou, F Udrea, F Bauer
IEEE Transactions on Electron Devices 57 (3), 594-600, 2010
712010
The Soft {Punchthrough}+ Superjunction Insulated Gate Bipolar Transistor: A High Speed Structure With Enhanced Electron Injection
M Antoniou, F Udrea, F Bauer, I Nistor
Electron Devices, IEEE Transactions on 58 (3), 769-775, 2011
47*2011
Optimisation of superjunction bipolar transistor for ultra-fast switching applications
M Antoniou, F Udrea, F Bauer
Proceedings of the 19th International Symposium on Power Semiconductor …, 2007
432007
A new way to alleviate the RC IGBT snapback phenomenon: The Super Junction solution
M Antoniou, F Udrea, F Bauer, I Nistor
2010 22nd International Symposium on Power Semiconductor Devices & IC's …, 2010
412010
Primary frequency regulation with load-side participation—Part II: Beyond passivity approaches
E Devane, A Kasis, M Antoniou, I Lestas
IEEE Transactions on Power Systems 32 (5), 3519-3528, 2016
332016
The semi-superjunction IGBT
M Antoniou, F Udrea, F Bauer, I Nistor
IEEE Electron Device Letters 31 (6), 591-593, 2010
292010
Superjunction IGBT filling the gap between SJ MOSFET and ultrafast IGBT
F Bauer, I Nistor, A Mihaila, M Antoniou, F Udrea
IEEE electron device letters 33 (9), 1288-1290, 2012
272012
The destruction mechanism in GCTs
N Lophitis, M Antoniou, F Udrea, FD Bauer, I Nistor, M Arnold, T Wikstrom, ...
IEEE transactions on electron devices 60 (2), 819-826, 2013
232013
Novel approach towards plasma enhancement in Trench Insulated Gate Bipolar Transistors
M Antoniou, N Lophitis, I Lestas, F Udrea, F Bauer, M Bellini, I Nistor, ...
IEEE Electron Device Letters 36 (8), 823-825, 2015
222015
On the investigation of the “anode side” superjunction IGBT design concept
M Antoniou, N Lophitis, F Udrea, F Bauer, UR Vemulapati, U Badstuebner
IEEE Electron Device Letters 38 (8), 1063-1066, 2017
212017
200-V lateral superjunction LIGBT on partial SOI
ECT Kho, AD Hoelke, SJ Pilkington, DK Pal, WAWZ Abidin, LY Ng, ...
IEEE electron device letters 33 (9), 1291-1293, 2012
212012
Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation
A Arvanitopoulos, N Lophitis, KN Gyftakis, S Perkins, M Antoniou
Semiconductor Science and Technology 32 (10), 104009, 2017
182017
Point injection in trench insulated gate bipolar transistor for ultra low losses
M Antoniou, F Udrea, F Bauer, A Mihaila, I Nistor
2012 24th International Symposium on Power Semiconductor Devices and ICs, 21-24, 2012
182012
TCAD device modelling and simulation of wide bandgap power semiconductors
N Lophitis, A Arvanitopoulos, S Perkins, M Antoniou, YK Sharma
Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their …, 2018
162018
Experimental demonstration of the p-ring FS+ Trench IGBT concept: A new design for minimizing the conduction losses
M Antoniou, N Lophitis, F Udrea, F Bauer, I Nistor, M Bellini, M Rahimo
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015
152015
200 V superjunction N-type lateral insulated-gate bipolar transistor with improved latch-up characteristics
EKC Tee, M Antoniou, F Udrea, A Holke, SJ Pilkington, DK Pal, NL Yew, ...
IEEE transactions on electron devices 60 (4), 1412-1415, 2013
152013
Experimentally validated three dimensional GCT wafer level simulations
N Lophitis, M Antoniou, F Udrea, I Nistor, M Arnold, T Wikström, J Vobecky
2012 24th International Symposium on Power Semiconductor Devices and ICs …, 2012
152012
The 3.3 kV semi-superjunction IGBT for increased cosmic ray induced breakdown immunity
M Antoniou, F Udrea, F Bauer
2009 21st International Symposium on Power Semiconductor Devices & IC's, 168-171, 2009
152009
Physical parameterisation of 3C-Silicon Carbide (SiC) with scope to evaluate the suitability of the material for power diodes as an alternative to 4H-SiC
A Arvanitopoulos, N Lophitis, S Perkins, KN Gyftakis, MB Guadas, ...
2017 IEEE 11th International Symposium on Diagnostics for Electrical …, 2017
142017
Parameters influencing the maximum controllable current in gate commutated thyristors
N Lophitis, M Antoniou, F Udrea, I Nistor, M Arnold, T Wikström, J Vobecky
IET Circuits, Devices & Systems 8 (3), 221-226, 2014
122014
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