Gottfried Strasser
Gottfried Strasser
Professor Materials Engineering for Nanoelectronics, TU Wien
Verified email at tuwien.ac.at
Title
Cited by
Cited by
Year
Microcavity-integrated graphene photodetector
M Furchi, A Urich, A Pospischil, G Lilley, K Unterrainer, H Detz, P Klang, ...
Nano letters 12 (6), 2773-2777, 2012
7212012
Ultrastrong light-matter coupling regime with polariton dots
Y Todorov, AM Andrews, R Colombelli, S De Liberato, C Ciuti, P Klang, ...
Physical review letters 105 (19), 196402, 2010
3882010
Reversing the pump dependence of a laser at an exceptional point
M Brandstetter, M Liertzer, C Deutsch, P Klang, J Schöberl, HE Türeci, ...
Nature communications 5 (1), 1-7, 2014
3722014
Specific heat of two-dimensional electrons in GaAs-GaAlAs multilayers
E Gornik, R Lassnig, G Strasser, HL Störmer, AC Gossard, W Wiegmann
Physical review letters 54 (16), 1820, 1985
2881985
Few-cycle THz emission from cold plasma oscillations
R Kersting, K Unterrainer, G Strasser, HF Kauffmann, E Gornik
Physical Review Letters 79 (16), 3038, 1997
2561997
Strong light-matter coupling in subwavelength metal-dielectric microcavities at terahertz frequencies
Y Todorov, AM Andrews, I Sagnes, R Colombelli, P Klang, G Strasser, ...
Physical review letters 102 (18), 186402, 2009
1622009
Direct observation of the LO phonon bottleneck in wide GaAs/ As quantum wells
BN Murdin, W Heiss, C Langerak, SC Lee, I Galbraith, G Strasser, ...
Physical Review B 55 (8), 5171, 1997
1531997
Terahertz phase modulator
R Kersting, G Strasser, K Unterrainer
Electronics Letters 36 (13), 1156-1158, 2000
1492000
Surface plasmon-enhanced photoluminescence from a single quantum well
NE Hecker, RA Höpfel, N Sawaki, T Maier, G Strasser
Applied physics letters 75 (11), 1577-1579, 1999
1481999
Observation of the intraexciton Autler-Townes effect in GaAs/AlGaAs semiconductor quantum wells
M Wagner, H Schneider, D Stehr, S Winnerl, AM Andrews, S Schartner, ...
Physical review letters 105 (16), 167401, 2010
1432010
Optical properties of metal-dielectric-metal microcavities in the THz frequency range
Y Todorov, L Tosetto, J Teissier, AM Andrews, P Klang, R Colombelli, ...
Optics express 18 (13), 13886-13907, 2010
1412010
Monolithically integrated mid-infrared lab-on-a-chip using plasmonics and quantum cascade structures
B Schwarz, P Reininger, D Ristanić, H Detz, AM Andrews, W Schrenk, ...
Nature Communications 5 (1), 1-7, 2014
1292014
Ultrafast intraband spectroscopy of electron capture and relaxation in InAs/GaAs quantum dots
T Müller, FF Schrey, G Strasser, K Unterrainer
Applied physics letters 83 (17), 3572-3574, 2003
1292003
Coherent plasmons in n-doped GaAs
R Kersting, JN Heyman, G Strasser, K Unterrainer
Physical Review B 58 (8), 4553, 1998
1281998
Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors
J Kuzmik, G Pozzovivo, C Ostermaier, G Strasser, D Pogany, E Gornik, ...
Journal of Applied Physics 106 (12), 124503, 2009
1252009
Negative differential resistance in dislocation-free double-barrier diodes grown on bulk GaN
S Golka, C Pflügl, W Schrenk, G Strasser, C Skierbiszewski, M Siekacz, ...
Applied Physics Letters 88 (17), 172106, 2006
1232006
Tuning the electro-optical properties of germanium nanowires by tensile strain
J Greil, A Lugstein, C Zeiner, G Strasser, E Bertagnolli
Nano letters 12 (12), 6230-6234, 2012
1212012
Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr $\hbox {O} _ {\bm 2} $ or Hf $\hbox {O} _ {\bm 2} $
J Kuzmik, G Pozzovivo, S Abermann, JF Carlin, M Gonschorek, E Feltin, ...
IEEE transactions on electron devices 55 (3), 937-941, 2008
1172008
Diffusion and drift in terahertz emission at GaAs surfaces
JN Heyman, N Coates, A Reinhardt, G Strasser
Applied physics letters 83 (26), 5476-5478, 2003
1142003
GaAs/AlGaAs superlattice quantum cascade lasers at
G Strasser, S Gianordoli, L Hvozdara, W Schrenk, K Unterrainer, E Gornik
Applied physics letters 75 (10), 1345-1347, 1999
1141999
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