| Electron effective masses in an InGaAs quantum well with InAs and GaAs inserts VA Kulbachinskii, NA Yuzeeva, GB Galiev, EA Klimov, IS Vasil’evskii, ... Semiconductor science and technology 27 (3), 035021, 2012 | 52 | 2012 |
| Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer GB Galiev, IS Vasil'Evskii, SS Pushkarev, ЕА Klimov, RM Imamov, ... Journal of crystal growth 366, 55-60, 2013 | 47 | 2013 |
| Influence of deviations from the crystal lattice periodicity on the semiconductor--metal phase transition in vanadium dioxide AR Begishev, GB Galiev, AS Ignat'ev, VG Mokerov, VG Poshin Sov. Phys.-Solid State (Engl. Transl.);(United States) 20 (6), 1978 | 33 | 1978 |
| VG Mo kerov, and AA Cherechukin GB Galiev, IS Vasilevskii, EA Klimov Semiconductors 40, 1445, 2006 | 28 | 2006 |
| Electrical and structural properties of PHEMT heterostructures based on AlGaAs/InGaAs/AlGaAs and δ-doped on two sides IS Vasil’evskiĭ, GB Galiev, EA Klimov, VG Mokerov, SS Shirokov, ... Semiconductors 42, 1084-1091, 2008 | 27 | 2008 |
| The effect of carrier density gradients on magnetotransport data measured in Hall bar geometry LA Ponomarenko, DTN De Lang, A de Visser, VA Kulbachinskii, ... Solid state communications 130 (10), 705-710, 2004 | 24 | 2004 |
| Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts DS Ponomarev, IS Vasil’Evskii, GB Galiev, EA Klimov, RA Khabibullin, ... Semiconductors 46, 484-490, 2012 | 23 | 2012 |
| Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures RA Khabibullin, IS Vasil’evskii, GB Galiev, EA Klimov, DS Ponomarev, ... Semiconductors 45, 657-662, 2011 | 23 | 2011 |
| Effect of (1 0 0) GaAs substrate misorientation on electrophysical parameters, structural properties and surface morphology of metamorphic HEMT nanoheterostructures InGaAs/InAlAs GB Galiev, IS Vasil'evskii, EА Klimov, SS Pushkarev, AN Klochkov, ... Journal of crystal growth 392, 11-19, 2014 | 22 | 2014 |
| Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an In x Ga 1− x As quantum well with InAs inserts VA Kulbachinskii, LN Oveshnikov, RA Lunin, NA Yuzeeva, GB Galiev, ... Semiconductors 49, 199-208, 2015 | 21 | 2015 |
| Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier K Požela, A Šilėnas, J Požela, V Jucienė, GB Galiev, JS Vasil’evskii, ... Applied Physics A 109, 233-237, 2012 | 21 | 2012 |
| Investigation of the optical properties of GaAs with δ-Si doping grown by molecular-beam epitaxy at low temperatures DV Lavrukhin, AE Yachmenev, AS Bugaev, GB Galiev, EA Klimov, ... Semiconductors 49, 911-914, 2015 | 19 | 2015 |
| Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well GB Galiev, IS Vasil’evskii, EA Klimov, AN Klochkov, DV Lavruhin, ... Semiconductors 49, 234-241, 2015 | 19 | 2015 |
| Electron transport and optical properties of shallow GaAs/InGaAs/GaAs quantum wells with a thin central AlAs barrier VA Kulbachinskii, IS Vasil'evskii, RA Lunin, G Galistu, A De Visser, ... Semiconductor science and technology 22 (3), 222, 2007 | 18 | 2007 |
| Improved InGaAs and InGaAs/InAlAs photoconductive antennas based on (111)-oriented substrates K Kuznetsov, A Klochkov, A Leontyev, E Klimov, S Pushkarev, G Galiev, ... Electronics 9 (3), 495, 2020 | 17 | 2020 |
| Molecular beam epitaxy growth of a planar p–n junction on a (111) A GaAs substrate, using the amphoteric property of silicon dopant G Galiev, V Kaminskii, D Milovzorov, L Velihovskii, V Mokerov Semiconductor science and technology 17 (2), 120, 2002 | 17 | 2002 |
| Drift velocity of electrons in quantum wells in high electric fields VG Mokerov, IS Vasil’evskii, GB Galiev, J Požela, K Požela, A Sužiedėlis, ... Semiconductors 43, 458-462, 2009 | 15 | 2009 |
| Metamorphic nanoheterostructures for millimeter-wave electronics GB Galiev, RA Khabibullin, DS Ponomarev, AE Yachmenev, AS Bugaev, ... Nanotechnologies in Russia 10, 593-599, 2015 | 14 | 2015 |
| Interrelation of the construction of the metamorphic InAlAs/InGaAs nanoheterostructures with the InAs content in the active layer of 76–100% with their surface morphology and … IS Vasil’evskii, GB Galiev, EA Klimov, AL Kvanin, SS Pushkarev, ... Semiconductors 45, 1158-1163, 2011 | 14 | 2011 |
| Structural and electrical properties of quantum wells with nanoscale InAs inserts in In y Al 1− y As/In x Ga 1− x As heterostructures on InP substrates AL Vasil’ev, IS Vasil’evskii, GB Galiev, RM Imamov, EA Klimov, ... Crystallography Reports 56, 298-309, 2011 | 14 | 2011 |
