Lutz Kirste

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Oliver AmbacherGips-Schüle-Professur für Leistungselektronik, Universität FreiburgDirección de correo verificada de inatech.uni-freiburg.de
Rudiger (Rüdiger) QuayFraunhofer IAF, Albert Ludwigs Universität FreiburgDirección de correo verificada de ieee.org
Agnė ŽukauskaitėFraunhofer FEPDirección de correo verificada de fep.fraunhofer.de
Markus ReuschRobert Bosch GmbHDirección de correo verificada de iaf.fraunhofer.de
Oliver WilliamsCardiff School of Physics and Astronomy, Cardiff UniversityDirección de correo verificada de cardiff.ac.uk
Stefan KrischokTU IlmenauDirección de correo verificada de tu-ilmenau.de
Daniel HofstetterAlumnus of ETH Zürich and Université de NeuchâtelDirección de correo verificada de Alumni.ETHZ.ch
Michael FiederleMaterial Research Center FMF Freiburg, Institute for Photo Science and Synchrotron Radiation KITDirección de correo verificada de fiederle.de
Rafael Garcia RojaFull Prof., Universidad de CádizDirección de correo verificada de gm.uca.es
José Manuel Mánuel DelgadoUniversidad de CádizDirección de correo verificada de gm.uca.es
Morales, F.M.Instituto IMEYMAT, Universidad de CádizDirección de correo verificada de gm.uca.es
Philipp DöringFraunhofer Institute for Applied Solid State PhysicsDirección de correo verificada de iaf.fraunhofer.de
esther baumannSenior research associate, NISTDirección de correo verificada de nist.gov
Fabrizio GiorgettaSenior research associate, NISTDirección de correo verificada de nist.gov
Rüdiger GoldhahnProfessor, Otto-von-Guericke UniversityDirección de correo verificada de ovgu.de
Dr.-Ing. Kamran ForghaniUChicago, Northwestern, UW-Madison, Universität UlmDirección de correo verificada de uchicago.edu
Taro YoshikawaDaicel Corporation / Kanazawa UniversityDirección de correo verificada de jp.daicel.com
Martin AlbrechtLeibniz-Institut für KristallzüchtungDirección de correo verificada de ikz-berlin.de
Dr. Arnulf LeutherIAF FraunhoferDirección de correo verificada de iaf.fraunhofer.de
PezoldtTU IlmenauDirección de correo verificada de tu-ilmenau.de

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Lutz Kirste

Dr. rer. nat., Fraunhofer IAF

Dirección de correo verificada de iaf.fraunhofer.de

Defects in semiconductors


Título Ordenar por citas Ordenar por año Ordenar por título	Citado por Citado por	Año
Size-dependent reactivity of diamond nanoparticles OA Williams, J Hees, C Dieker, W Jäger, L Kirste, CE Nebel ACS nano 4 (8), 4824-4830, 2010	440	2010
Elastic modulus and coefficient of thermal expansion of piezoelectric Al1− xScxN (up to x= 0.41) thin films Y Lu, M Reusch, N Kurz, A Ding, T Christoph, M Prescher, L Kirste, ... Apl Materials 6 (7), 2018	102	2018
Metal‐organic chemical vapor deposition of aluminum scandium nitride S Leone, J Ligl, C Manz, L Kirste, T Fuchs, H Menner, M Prescher, ... physica status solidi (RRL)–Rapid Research Letters 14 (1), 1900535, 2020	88	2020
Experimental determination of the electro-acoustic properties of thin film AlScN using surface acoustic wave resonators N Kurz, A Ding, DF Urban, Y Lu, L Kirste, NM Feil, A Žukauskaitė, ... Journal of Applied Physics 126 (7), 2019	88	2019
Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices C Hartmann, J Wollweber, S Sintonen, A Dittmar, L Kirste, S Kollowa, ... CrystEngComm 18 (19), 3488-3497, 2016	81	2016
Densification of thin aluminum oxide films by thermal treatments V Cimalla, M Baeumler, L Kirste, M Prescher, B Christian, T Passow, ... Materials Sciences and Applications 5 (08), 628, 2014	81	2014
Surface morphology and microstructure of pulsed DC magnetron sputtered piezoelectric AlN and AlScN thin films Y Lu, M Reusch, N Kurz, A Ding, T Christoph, L Kirste, V Lebedev, ... physica status solidi (a) 215 (9), 1700559, 2018	77	2018
Optical constants and band gap of wurtzite Al1− xScxN/Al2O3 prepared by magnetron sputter epitaxy for scandium concentrations up to x= 0.41 M Baeumler, Y Lu, N Kurz, L Kirste, M Prescher, T Christoph, J Wagner, ... Journal of Applied Physics 126 (4), 2019	73	2019
Wurtzite ScAlN, InAlN, and GaAlN crystals, a comparison of structural, elastic, dielectric, and piezoelectric properties O Ambacher, B Christian, N Feil, DF Urban, C Elsässer, M Prescher, ... Journal of Applied Physics 130 (4), 2021	70	2021
GaN-based submicrometer HEMTs with lattice-matched InAlGaN barrier grown by MBE T Lim, R Aidam, P Waltereit, T Henkel, R Quay, R Lozar, T Maier, L Kirste, ... IEEE Electron Device Letters 31 (7), 671-673, 2010	70	2010
Diffusion of Mg dopant in metal-organic vapor-phase epitaxy grown GaN and AlxGa1− xN K Köhler, R Gutt, J Wiegert, L Kirste Journal of Applied Physics 113 (7), 2013	65	2013
Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter J Däubler, T Passow, R Aidam, K Köhler, L Kirste, M Kunzer, J Wagner Applied Physics Letters 105 (11), 2014	64	2014
Chemically ordered alloys: Spontaneous formation of natural quantum wells M Albrecht, L Lymperakis, J Neugebauer, JE Northrup, L Kirste, M Leroux, ... Physical Review B—Condensed Matter and Materials Physics 71 (3), 035314, 2005	64	2005
Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures P Waltereit, S Müller, K Bellmann, C Buchheim, R Goldhahn, K Köhler, ... Journal of Applied Physics 106 (2), 2009	62	2009
X-ray determination of the composition of partially strained group-III nitride layers using the Extended Bond Method N Herres, L Kirste, H Obloh, K Köhler, J Wagner, P Koidl Materials Science and Engineering: B 91, 425-432, 2002	58	2002
Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE K Frei, R Trejo-Hernández, S Schütt, L Kirste, M Prescher, R Aidam, ... Japanese Journal of Applied Physics 58 (SC), SC1045, 2019	56	2019
Influence of the surface potential on electrical properties of AlxGa1− xN/GaN heterostructures with different Al-content: Effect of growth method K Köhler, S Müller, R Aidam, P Waltereit, W Pletschen, L Kirste, ... Journal of Applied Physics 107 (5), 2010	52	2010
Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study J Bläsing, A Krost, J Hertkorn, F Scholz, L Kirste, A Chuvilin, U Kaiser Journal of Applied Physics 105 (3), 2009	52	2009
Near infrared absorption and room temperature photovoltaic response in AlN∕ GaN superlattices grown by metal-organic vapor-phase epitaxy E Baumann, FR Giorgetta, D Hofstetter, S Golka, W Schrenk, G Strasser, ... Applied physics letters 89 (4), 2006	52	2006
Residual stress stability in fiber textured stoichiometric AlN film grown using rf magnetron sputtering RE Sah, L Kirste, M Baeumler, P Hiesinger, V Cimalla, V Lebedev, ... Journal of Vacuum Science & Technology A 28 (3), 394-399, 2010	51	2010

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